UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Impurity diffusion behavior of bipolar transistor under low-temperature furnace annealing and high-temperature RTA and its optimization for 0.5- mu m Bi-CMOS process

IEEE transactions on electron devices, 1992-01, Vol.39 (1), p.33-40

1992

Volltextzugriff (PDF)

A study of nonequilibrium diffusion modeling-applications to rapid thermal annealing and advanced bipolar technologies

IEEE transactions on electron devices, 1992-03, Vol.39 (3), p.648-661

1992

Volltextzugriff (PDF)

A 0.8- mu m BiCMOS ATM switch on an 800 Mb/s asynchronous buffered banyan network

IEEE journal of solid-state circuits, 1991-08, Vol.26 (8), p.1133-1144

1991

Volltextzugriff (PDF)

A 0.9-V, 150-MHz, 10-mW, 4 mm/sup 2/, 2-D discrete cosine transform core processor with variable threshold-voltage (VT) scheme

IEEE journal of solid-state circuits, 1996-11, Vol.31 (11), p.1770-1779

1996

Volltextzugriff (PDF)

A 0.9-V, 150-MHz, 10-mW, 4 mm(2), 2-D discrete cosinetransform core processor with variable threshold-voltage (VT)scheme

IEEE journal of solid-state circuits, 1996-11, Vol.31 (11), p.1770-1779

1996

Volltextzugriff (PDF)

Comparison between poly emitter bipolar characteristics with and without native oxide layers under various processes

Proceedings of the Bipolar Circuits and Technology Meeting, 1989, p.98-101

1989

Volltextzugriff (PDF)

Impurity diffusion behavior of bipolar transistor underlow-temperature furnace annealing and high-temperature RTA and itsoptimization for 0.5-mu m Bi-CMOS process

IEEE transactions on electron devices, 1992-01, Vol.39 (1), p.33-40

1992

Volltextzugriff (PDF)

Minority carrier mobility model for device simulation

Solid-state electronics, 1990-06, Vol.33 (6), p.727-731

1990

Volltextzugriff (PDF)

Minority carrier mobility model for device simulation: Material and process characterizeation for semiconductor device simulation

Solid-state electronics, 1990, Vol.33 (6), p.727-731

1990

Volltextzugriff (PDF)

A 0.8-mu m BiCMOS ATM switch on an 800 Mb/s asynchronous bufferedbanyan network

IEEE journal of solid-state circuits, 1991-08, Vol.26 (8), p.1133-1144

1991

Volltextzugriff (PDF)

A 0.9 V 150 MHz 10 mW 4 mm/sup 2/ 2-D discrete cosine transform core processor with variable-threshold-voltage scheme

1996 IEEE International Solid-State Circuits Conference. Digest of TEchnical Papers, ISSCC, 1996, p.166-167

1996

Volltextzugriff (PDF)

2.6 Gbyte/sec bandwidth cache/TLB macro for high-performance RISC processor

Proceedings of the IEEE 1991 Custom Integrated Circuits Conference, 1991, p.10.2/1-10.2/4

1991

Volltextzugriff (PDF)

Impact of ion-implantation damage and transient-enhanced diffusion on advanced bipolar technologies-comparisons between experiments and non-equilibrium diffusion modeling

Proceedings of the 1991 Bipolar Circuits and Technology Meeting, 1991, p.275-278

1991

Volltextzugriff (PDF)

A 3.3 V, 0.5 mu m BiCMOS technology for BiNMOS and ECL gates

Proceedings of the IEEE 1991 Custom Integrated Circuits Conference, 1991, p.18.3/1-18.3/4

1991

Volltextzugriff (PDF)

1.2μm Bi-CMOS Technology with High Performance ECL

ESSDERC '87: 17th European Solid State Device Research Conference, 1987, p.29-32

1987

Volltextzugriff (PDF)

Modeling Of Minority Carrier Mobility And Dopant-dependent Bandgap Narrowing For Accurate Device Simulation

Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits, 1990, p.63-64

1990

Volltextzugriff (PDF)

Bipolar transistor design for low process-temperature 0.5 mu m Bi-CMOS

International Technical Digest on Electron Devices Meeting, 1989, p.237-240

1989

Volltextzugriff (PDF)

Intelligent Simulation for OPtimization of Fabrication Processes

Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits, 1990, p.15-16

1990

Volltextzugriff (PDF)

Fully integrated multilevel interconnect process for low cost sub-half-micron ASIC applications

1995 Symposium on VLSI Technology. Digest of Technical Papers, 1995, p.47-48

1995

Volltextzugriff (PDF)

0.8 µm Bi-CMOS technology with high fTion-implanted emitter bipolar transistor

1987 International Electron Devices Meeting, 1987, p.28-31

1987

Volltextzugriff (PDF)

High-performance 0.5 mu m CMOS technology for logic LSIs with embedded large capacity SRAMs

International Electron Devices Meeting 1991 [Technical Digest], 1991, p.489-492

1991

Volltextzugriff (PDF)

A 0.8 μm BiCMOS ATM switch on the 800 Mbps asynchronous buffered banyan network

Digest of Technical Papers., 1990 Symposium on VLSI Circuits, 1990, p.65-66

1990

Volltextzugriff (PDF)

Demodulation characteristics of a 20GHz-band direct RF undersampling receiver

2016 Asia-Pacific Microwave Conference (APMC), 2016, p.1-3

2016

Volltextzugriff (PDF)

An image rejection type Ku-band direct RF undersampling CMOS receiver

2016 Global Symposium on Millimeter Waves (GSMM) & ESA Workshop on Millimetre-Wave Technology and Applications, 2016, p.1-4

2016

Volltextzugriff (PDF)

A CMOS series/shunt switching type S/H IC for Ka-band direct RF under sampling receiver

2015 Asia-Pacific Microwave Conference (APMC), 2015, Vol.1, p.1-3

2015

Volltextzugriff (PDF)

1 – 25 von 25

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(9)
Mit Volltextzugriff
(18)

Publikationsform

Tagungsberichte
(16)
Artikel
(9)

Sprache

Englisch
(25)
Japanisch
(2)

Erscheinungsjahr

n.n

Thema

Bipolar Transistors
(6)
Cmos Process
(6)
Cmos Technology
(6)
Engineering
(6)
Engineering, Electrical & Electronic
(6)
Science & Technology
(6)
Technology
(6)
Boron
(5)
Impurities
(5)
Applied Sciences
(4)
Bicmos Integrated Circuits
(4)
Clocks
(4)
Electronics
(4)
Exact Sciences And Technology
(4)
Furnaces
(4)
Physical Sciences
(4)
Physics
(4)
Physics, Applied
(4)
Degradation
(3)
Fabrication
(3)

15 weitere anzeigen...

Weniger anzeigen...

Kollektion

Zeitschrift / Serie

Menü

Weitere Dienste

Einstellungen

Impurity diffusion behavior of bipolar transistor under low-temperature furnace annealing and high-temperature RTA and its optimization for 0.5- mu m Bi-CMOS process

A study of nonequilibrium diffusion modeling-applications to rapid thermal annealing and advanced bipolar technologies

A 0.8- mu m BiCMOS ATM switch on an 800 Mb/s asynchronous buffered banyan network

A 0.9-V, 150-MHz, 10-mW, 4 mm/sup 2/, 2-D discrete cosine transform core processor with variable threshold-voltage (VT) scheme

A 0.9-V, 150-MHz, 10-mW, 4 mm(2), 2-D discrete cosinetransform core processor with variable threshold-voltage (VT)scheme

Comparison between poly emitter bipolar characteristics with and without native oxide layers under various processes

Impurity diffusion behavior of bipolar transistor underlow-temperature furnace annealing and high-temperature RTA and itsoptimization for 0.5-mu m Bi-CMOS process

Minority carrier mobility model for device simulation

Minority carrier mobility model for device simulation: Material and process characterizeation for semiconductor device simulation

A 0.8-mu m BiCMOS ATM switch on an 800 Mb/s asynchronous bufferedbanyan network

A 0.9 V 150 MHz 10 mW 4 mm/sup 2/ 2-D discrete cosine transform core processor with variable-threshold-voltage scheme

2.6 Gbyte/sec bandwidth cache/TLB macro for high-performance RISC processor

Impact of ion-implantation damage and transient-enhanced diffusion on advanced bipolar technologies-comparisons between experiments and non-equilibrium diffusion modeling

A 3.3 V, 0.5 mu m BiCMOS technology for BiNMOS and ECL gates

1.2μm Bi-CMOS Technology with High Performance ECL

Modeling Of Minority Carrier Mobility And Dopant-dependent Bandgap Narrowing For Accurate Device Simulation

Bipolar transistor design for low process-temperature 0.5 mu m Bi-CMOS

Intelligent Simulation for OPtimization of Fabrication Processes

Fully integrated multilevel interconnect process for low cost sub-half-micron ASIC applications

0.8 µm Bi-CMOS technology with high fTion-implanted emitter bipolar transistor

High-performance 0.5 mu m CMOS technology for logic LSIs with embedded large capacity SRAMs

A 0.8 μm BiCMOS ATM switch on the 800 Mbps asynchronous buffered banyan network

Demodulation characteristics of a 20GHz-band direct RF undersampling receiver

An image rejection type Ku-band direct RF undersampling CMOS receiver

A CMOS series/shunt switching type S/H IC for Ka-band direct RF under sampling receiver

Suchergebnisse filtern