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Closed-Form Expressions of Electric and Magnetic Near-Fields for the Calibration of Near-Field Probes

IEEE transactions on instrumentation and measurement, 2021-01, Vol.70, p.1-15

2021

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Correlation between Near-Field Scan Immunity and Radiated Susceptibility at Integrated Circuit Level

2022 International Symposium on Electromagnetic Compatibility – EMC Europe, 2022, p.120-125

2022

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Reliability of ESD protection devices designed in a 3D technology

Microelectronics and reliability, 2014-09, Vol.54 (9-10), p.2272-2277

2014

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On-chip measurement to analyze failure mechanisms of ICs under system level ESD stress

Microelectronics and reliability, 2013-09, Vol.53 (9-11), p.1278-1283

2013

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Building-up of system level ESD modeling: Impact of a decoupling capacitance on ESD propagation

Microelectronics and reliability, 2013-02, Vol.53 (2), p.221-228

2013

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Powering a Commercial Datalogger by Energy Harvesting from Generated Aeroacoustic Noise

Journal of physics. Conference series, 2014-01, Vol.557 (1), p.12025-5

2014

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Electrostatic discharge failure analysis of capacitive RF MEMS switches

Microelectronics and reliability, 2007-09, Vol.47 (9), p.1818-1822

2007

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ESD failure signature in capacitive RF MEMS switches

Microelectronics and reliability, 2008-08, Vol.48 (8), p.1237-1240

2008

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Analytical description of the injection ratio of self-biased bipolar transistors under the very high injection conditions of ESD events

Solid-state electronics, 2008-05, Vol.52 (5), p.663-674

2008

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Accelerated lifetime test of RF-MEMS switches under ESD stress

Microelectronics and reliability, 2009-09, Vol.49 (9), p.1256-1259

2009

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Transient voltage overshoots of high voltage ESD protections based on bipolar transistors in smart power technology

2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2010, p.253-256

2010

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Latch-up ring design guidelines to improve electrostatic discharge (ESD) protection scheme efficiency

IEEE journal of solid-state circuits, 2004-10, Vol.39 (10), p.1778-1782

2004

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Prediction of LIN communication robustness against EFT events using dedicated failure models

Microelectronics and reliability, 2017-09, Vol.76-77, p.685-691

2017

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Anticipating Common-Mode Conducted Emission of DC-DC Converter from Electric Near-Field Scan

2021 IEEE International Joint EMC/SI/PI and EMC Europe Symposium, 2021, p.603-608

2021

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Analysis and compact modeling of a vertical grounded-base n-p-n bipolar transistor used as ESD protection in a smart power technology

IEEE journal of solid-state circuits, 2001-09, Vol.36 (9), p.1373-1381

2001

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20GHz on-chip measurement of ESD waveform for system level analysis

Microelectronics and reliability, 2015-11, Vol.55 (11), p.2276-2283

2015

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Different Failure signatures of multiple TLP and HBM Stresses in an ESD robust protection structure

Microelectronics and reliability, 2005-09, Vol.45 (9), p.1415-1420

2005

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A System-Level Electrostatic-Discharge-Protection Modeling Methodology for Time-Domain Analysis

IEEE transactions on electromagnetic compatibility, 2013-02, Vol.55 (1), p.45-57

2013

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Building-up of system level ESD modeling: Impact of a decoupling capacitance on ESD propagation : ADVANCES IN ELECTROSTATIC DISCHARGE (ESD) PROTECTION FOR ICs

Microelectronics and reliability, 2013, Vol.53 (2), p.221-228

2013

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Low Frequency Noise Measurements for ESD Latent Defect Detection in High Reliability Applications

Microelectronics and reliability, 2004-09, Vol.44 (9), p.1781-1786

2004

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Determination of the ESD Failure Cause Through its Signature

Microelectronics and reliability, 2003-09, Vol.43 (9), p.1551-1556

2003

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Initiation à la simulation bidimensionnelleEnvironnement SILVACO ( ATHENA - ATLAS)

Journal sur l'enseignement des sciences et technologies de l'information et des systèmes, 2005, Vol.4

2005

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Initiation à la simulation bidimensionnelle Environnement SILVACO ( ATHENA - ATLAS)

Journal sur l'enseignement des sciences et technologies de l'information et des systèmes, 2005, Vol.4, p.3

2005

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Efficient TCAD methodology for ESD failure current prediction of smart power ESD protection

Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005, 2005, p.115-118

2005

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Accurate prediction of the ESD robustness of semiconductor devices through physical simulation

2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual, 2005, p.106-111

2005

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Closed-Form Expressions of Electric and Magnetic Near-Fields for the Calibration of Near-Field Probes

Correlation between Near-Field Scan Immunity and Radiated Susceptibility at Integrated Circuit Level

Reliability of ESD protection devices designed in a 3D technology

On-chip measurement to analyze failure mechanisms of ICs under system level ESD stress

Building-up of system level ESD modeling: Impact of a decoupling capacitance on ESD propagation

Powering a Commercial Datalogger by Energy Harvesting from Generated Aeroacoustic Noise

Electrostatic discharge failure analysis of capacitive RF MEMS switches

ESD failure signature in capacitive RF MEMS switches

Analytical description of the injection ratio of self-biased bipolar transistors under the very high injection conditions of ESD events

Accelerated lifetime test of RF-MEMS switches under ESD stress

Transient voltage overshoots of high voltage ESD protections based on bipolar transistors in smart power technology

Latch-up ring design guidelines to improve electrostatic discharge (ESD) protection scheme efficiency

Prediction of LIN communication robustness against EFT events using dedicated failure models

Anticipating Common-Mode Conducted Emission of DC-DC Converter from Electric Near-Field Scan

Analysis and compact modeling of a vertical grounded-base n-p-n bipolar transistor used as ESD protection in a smart power technology

20GHz on-chip measurement of ESD waveform for system level analysis

Different Failure signatures of multiple TLP and HBM Stresses in an ESD robust protection structure

A System-Level Electrostatic-Discharge-Protection Modeling Methodology for Time-Domain Analysis

Building-up of system level ESD modeling: Impact of a decoupling capacitance on ESD propagation : ADVANCES IN ELECTROSTATIC DISCHARGE (ESD) PROTECTION FOR ICs

Low Frequency Noise Measurements for ESD Latent Defect Detection in High Reliability Applications

Determination of the ESD Failure Cause Through its Signature

Initiation à la simulation bidimensionnelleEnvironnement SILVACO ( ATHENA - ATLAS)

Initiation à la simulation bidimensionnelle Environnement SILVACO ( ATHENA - ATLAS)

Efficient TCAD methodology for ESD failure current prediction of smart power ESD protection

Accurate prediction of the ESD robustness of semiconductor devices through physical simulation

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