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Study on the Lateral Carrier Diffusion and Source-Drain Series Resistance in Self-Aligned Top-Gate Coplanar InGaZnO Thin-Film Transistors

Scientific reports, 2019-04, Vol.9 (1), p.6588-6588, Article 6588

2019

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[Paper] Improvement of Internal Compensation by Differential Offset Method for OLED Display Using High Mobility Oxide TFT

ITE Transactions on Media Technology and Applications, 2022, Vol.10(4), pp.152-158

2022

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Modeling and characterization of low frequency noise in self-aligned top-gate coplanar IGZO thin-film transistors

Semiconductor science and technology, 2024-11, Vol.39 (11), p.115019

2024

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Cation Composition-Dependent Device Performance and Positive Bias Instability of Self-Aligned Oxide Semiconductor Thin-Film Transistors: Including Oxygen and Hydrogen Effect

ACS applied materials & interfaces, 2022-01, Vol.14 (1), p.1389-1396

2022

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Toward active-matrix lab-on-a-chip: programmable electrofluidic control enabled by arrayed oxide thin film transistors

Lab on a chip, 2012-01, Vol.12 (2), p.353-360

2012

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High-Performance Hexagonal Tellurium Thin-Film Transistor Using Tellurium Oxide as a Crystallization Retarder

IEEE electron device letters, 2023-02, Vol.44 (2), p.269-272

2023

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Improvement of the Bias Instability Characteristics Driven by Organic Film in IGZO TFT for OLED Back Plane

Proceedings of the International Display Workshops, 2023-12, p.422

2023

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The Significance on Structural Modulation of Buffer and Gate Insulator for ALD Based InGaZnO TFT Applications

IEEE transactions on electron devices, 2021-12, Vol.68 (12), p.6147-6153

2021

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Analysis of Drain-Induced Barrier Lowering in InGaZnO Thin-Film Transistors

IEEE transactions on electron devices, 2023-01, Vol.70 (1), p.1-6

2023

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Quantitative Calculation of Oxygen Incorporation in Sputtered IGZO Films and the Impact on Transistor Properties

Journal of the Electrochemical Society, 2011, Vol.158 (3), p.H289

2011

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P‐14: Effects of Film Density on IGZO Based TFT Device Reliability

SID International Symposium Digest of technical papers, 2022-06, Vol.53 (1), p.1089-1091

2022

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Excessive Oxygen Peroxide Model‐Based Analysis of Positive‐Bias‐Stress and Negative‐Bias‐Illumination‐Stress Instabilities in Self‐Aligned Top‐Gate Coplanar In–Ga–Zn–O Thin‐Film Transistors

Advanced electronic materials, 2022-05, Vol.8 (5), p.n/a

2022

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Internal Compensation by Offset Method for QHD OLED Display Using High Mobility Oxide TFT

Proceedings of the International Display Workshops, 2021-12, p.139

2021

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Density-Dependent Microstructures and Electromechanical Properties of Amorphous InGaZnO 4 Semiconductors: An Ab Initio Study

ACS applied electronic materials, 2022-05, Vol.4 (5), p.2545-2551

2022

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Excessive Oxygen Peroxide Model‐Based Analysis of Positive‐Bias‐Stress and Negative‐Bias‐Illumination‐Stress Instabilities in Self‐Aligned Top‐Gate Coplanar In–Ga–Zn–O Thin‐Film Transistors (Adv. Electron. Mater. 5/2022)

Advanced electronic materials, 2022-05, Vol.8 (5), p.n/a

2022

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Density-Dependent Microstructures and Electromechanical Properties of Amorphous InGaZnO4 Semiconductors: An Ab Initio Study

ACS applied electronic materials, 2022-05, Vol.4 (5), p.2545-2551

2022

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Toward Active-Matrix Lab-On-A-Chip: Programmable Electrofluidic control Enaled by Arrayed Oxide Thin Film Transistors

Lab on a chip, 2012-01, Vol.12 (2)

2012

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P-2: Novel High Mobility Oxide TFT with Self-Aligned S/D Regions Formed by Wet-etch process

SID International Symposium Digest of technical papers, 2016-05, Vol.47 (1), p.1129-1131

2016

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Toward active-matrix lab-on-a-chip: programmable electrofluidic control enabled by arrayed oxide thin film transistorsElectronic supplementary information (ESI) available. See DOI: 10.1039/c1lc20851a

2011-12

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High Subthreshold Swing a-IGZO Driving TFTs for Low-Gray Level Uniformity in Active- Matrix OLED

2023 30th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2023, p.114-117

2023

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Quantitative Calculation of Oxygen Incorporation in Sputtered Indium Gallium Zinc Oxide (IGZO) Films and the Subsequent Impact on the Electron Transport and Thin Film Transistor Properties

Meeting abstracts (Electrochemical Society), 2010-07, Vol.MA2010-02 (29), p.1821-1821

2010

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Quantum Rényi-2 entropy power inequalities for bosonic Gaussian operations

Journal of the Optical Society of America. B, Optical physics, 2023-08, Vol.40 (8), p.1999

2023

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Development of Automatic Conversion System for Pipo Painting Image Based on Artificial Intelligence

Journal of information processing systems, 2023-02, Vol.19 (1), p.33-45

2023

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WOx channel engineering of Cu-ion-driven synaptic transistor array for low-power neuromorphic computing

Scientific reports, 2023-12, Vol.13 (1), p.22111-22111, Article 22111

2023

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Comment on “Multiparty quantum mutual information: An alternative definition”

Physical review. A, 2023-12, Vol.108 (6), Article 066401

2023

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Study on the Lateral Carrier Diffusion and Source-Drain Series Resistance in Self-Aligned Top-Gate Coplanar InGaZnO Thin-Film Transistors

[Paper] Improvement of Internal Compensation by Differential Offset Method for OLED Display Using High Mobility Oxide TFT

Modeling and characterization of low frequency noise in self-aligned top-gate coplanar IGZO thin-film transistors

Cation Composition-Dependent Device Performance and Positive Bias Instability of Self-Aligned Oxide Semiconductor Thin-Film Transistors: Including Oxygen and Hydrogen Effect

Toward active-matrix lab-on-a-chip: programmable electrofluidic control enabled by arrayed oxide thin film transistors

High-Performance Hexagonal Tellurium Thin-Film Transistor Using Tellurium Oxide as a Crystallization Retarder

Improvement of the Bias Instability Characteristics Driven by Organic Film in IGZO TFT for OLED Back Plane

The Significance on Structural Modulation of Buffer and Gate Insulator for ALD Based InGaZnO TFT Applications

Analysis of Drain-Induced Barrier Lowering in InGaZnO Thin-Film Transistors

Quantitative Calculation of Oxygen Incorporation in Sputtered IGZO Films and the Impact on Transistor Properties

P‐14: Effects of Film Density on IGZO Based TFT Device Reliability

Excessive Oxygen Peroxide Model‐Based Analysis of Positive‐Bias‐Stress and Negative‐Bias‐Illumination‐Stress Instabilities in Self‐Aligned Top‐Gate Coplanar In–Ga–Zn–O Thin‐Film Transistors

Internal Compensation by Offset Method for QHD OLED Display Using High Mobility Oxide TFT

Density-Dependent Microstructures and Electromechanical Properties of Amorphous InGaZnO 4 Semiconductors: An Ab Initio Study

Excessive Oxygen Peroxide Model‐Based Analysis of Positive‐Bias‐Stress and Negative‐Bias‐Illumination‐Stress Instabilities in Self‐Aligned Top‐Gate Coplanar In–Ga–Zn–O Thin‐Film Transistors (Adv. Electron. Mater. 5/2022)

Density-Dependent Microstructures and Electromechanical Properties of Amorphous InGaZnO4 Semiconductors: An Ab Initio Study

Toward Active-Matrix Lab-On-A-Chip: Programmable Electrofluidic control Enaled by Arrayed Oxide Thin Film Transistors

P-2: Novel High Mobility Oxide TFT with Self-Aligned S/D Regions Formed by Wet-etch process

Toward active-matrix lab-on-a-chip: programmable electrofluidic control enabled by arrayed oxide thin film transistorsElectronic supplementary information (ESI) available. See DOI: 10.1039/c1lc20851a

High Subthreshold Swing a-IGZO Driving TFTs for Low-Gray Level Uniformity in Active- Matrix OLED

Quantitative Calculation of Oxygen Incorporation in Sputtered Indium Gallium Zinc Oxide (IGZO) Films and the Subsequent Impact on the Electron Transport and Thin Film Transistor Properties

Quantum Rényi-2 entropy power inequalities for bosonic Gaussian operations

Development of Automatic Conversion System for Pipo Painting Image Based on Artificial Intelligence

WOx channel engineering of Cu-ion-driven synaptic transistor array for low-power neuromorphic computing

Comment on “Multiparty quantum mutual information: An alternative definition”

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