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Electrothermal performance limit of β-Ga2O3 field-effect transistors

Applied physics letters, 2019-10, Vol.115 (17)

2019

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Thermodynamic Studies of β‑Ga2O3 Nanomembrane Field-Effect Transistors on a Sapphire Substrate

ACS omega, 2017-11, Vol.2 (11), p.7723-7729

2017

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Low dissipation spectral filtering using a field-effect tunable III–V hybrid metasurface

Applied physics letters, 2018-08, Vol.113 (6)

2018

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A metasurface optical modulator using voltage-controlled population of quantum well states

Applied physics letters, 2018-11, Vol.113 (20)

2018

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Study of Neutron Soft Error Rate (SER) Sensitivity: Investigation of Upset Mechanisms by Comparative Simulation of FinFET and Planar MOSFET SRAMs

IEEE transactions on nuclear science, 2015-08, Vol.62 (4), p.1642-1649

2015

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Solar-Blind UV Photodetector Based on Atomic Layer-Deposited Cu2O and Nanomembrane β‑Ga2O3 pn Oxide Heterojunction

ACS omega, 2019-12, Vol.4 (24), p.20756-20761

2019

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Radiation-induced soft error rate analyses for 14 nm FinFET SRAM devices

2015 IEEE International Reliability Physics Symposium, 2015, p.4B.1.1-4B.1.4

2015

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The Impact of Channel Semiconductor on the Memory Characteristics of Ferroelectric Field Effect Transistors

IEEE journal of the Electron Devices Society, 2020-01, Vol.8, p.1-1

2020

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High Performance -Ga2O3 Nano-Membrane Field Effect Transistors on a High Thermal Conductivity Diamond Substrate

IEEE journal of the Electron Devices Society, 2019, Vol.7, p.914-918

2019

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First demonstration of robust tri-gateβ-Ga2O3nano-membrane field-effect transistors

Nanotechnology, 2022-03, Vol.33 (12)

2022

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First demonstration of robust tri-gate β-Ga 2 O 3 nano-membrane field-effect transistors

Nanotechnology, 2022-03, Vol.33 (12), p.125201

2022

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First demonstration of robust tri-gate β-Ga2O3 nano-membrane field-effect transistors

Nanotechnology, 2021-12, Vol.33 (12)

2021

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Alleviation of Self-Heating Effect in Top-Gated Ultrathin In2O3 FETs Using a Thermal Adhesion Layer

IEEE transactions on electron devices, 2023-01, Vol.70 (1), p.113

2023

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Ultraviolet Light-Based Current-Voltage Method for Simultaneous Extraction of Donor- and Acceptor-Like Interface Traps in \beta -Ga2O3 FETs

IEEE electron device letters, 2018-11, Vol.39 (11), p.1708-1711

2018

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Structural and Material Innovations for High Performance Beta-Gallium Oxide Nano-Membrane Fets

Noh, Jinhyun

2021

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Alleviation of Self-Heating Effect in Top-Gated Ultrathin In 2 O 3 FETs Using a Thermal Adhesion Layer

IEEE transactions on electron devices, 2023-01, Vol.70 (1), p.113-120

2023

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First Experimental Demonstration of Robust HZO/β-Ga₂O₃ Ferroelectric Field-Effect Transistors as Synaptic Devices for Artificial Intelligence Applications in a High-Temperature Environment

IEEE transactions on electron devices, 2021-05, Vol.68 (5), p.2515-2521

2021

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Enhancement of Thermal Transfer From β-Ga2O3 Nano-Membrane Field-Effect Transistors to High Thermal Conductivity Substrate by Inserting an Interlayer

IEEE transactions on electron devices, 2022-03, Vol.69 (3), p.1186-1190

2022

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Enhancement of Thermal Transfer From β-Ga 2 O 3 Nano-Membrane Field-Effect Transistors to High Thermal Conductivity Substrate by Inserting an Interlayer

IEEE transactions on electron devices, 2022-03, Vol.69 (3), p.1186-1190

2022

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Alleviation of Self-Heating Effect in Top-Gated Ultrathin In } O } FETs Using a Thermal Adhesion Layer

IEEE transactions on electron devices, 2022, p.1-8

2022

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Ultraviolet Light-Based Current–Voltage Method for Simultaneous Extraction of Donor- and Acceptor-Like Interface Traps in $\beta$ -Ga 2 O 3 FETs

IEEE electron device letters, 2018-11, Vol.39 (11), p.1708-1711

2018

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BEOL Compatible Indium-Tin-Oxide Transistors: Switching of Ultrahigh-Density 2-D Electron Gas Over 0.8 × 1014/cm2 at Oxide/Oxide Interface by the Change of Ferroelectric Polarization

IEEE transactions on electron devices, 2021-07, Vol.68 (7), p.3195-3199

2021

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BEOL Compatible Indium-Tin-Oxide Transistors: Switching of Ultrahigh-Density 2-D Electron Gas Over 0.8 × 10 14 /cm 2 at Oxide/Oxide Interface by the Change of Ferroelectric Polarization

IEEE transactions on electron devices, 2021-07, Vol.68 (7), p.3195-3199

2021

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Ultraviolet Light-Based Current–Voltage Method for Simultaneous Extraction of Donor- and Acceptor-Like Interface Traps in [Formula Omitted]-Ga2O3 FETs

IEEE electron device letters, 2018-01, Vol.39 (11), p.1708

2018

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First demonstration of robust tri-gate β -Ga 2 O 3 nano-membrane field-effect transistors

Nanotechnology, 2021-12, Vol.33 (12)

2021

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Electrothermal performance limit of β-Ga2O3 field-effect transistors

Thermodynamic Studies of β‑Ga2O3 Nanomembrane Field-Effect Transistors on a Sapphire Substrate

Low dissipation spectral filtering using a field-effect tunable III–V hybrid metasurface

A metasurface optical modulator using voltage-controlled population of quantum well states

Study of Neutron Soft Error Rate (SER) Sensitivity: Investigation of Upset Mechanisms by Comparative Simulation of FinFET and Planar MOSFET SRAMs

Solar-Blind UV Photodetector Based on Atomic Layer-Deposited Cu2O and Nanomembrane β‑Ga2O3 pn Oxide Heterojunction

Radiation-induced soft error rate analyses for 14 nm FinFET SRAM devices

The Impact of Channel Semiconductor on the Memory Characteristics of Ferroelectric Field Effect Transistors

High Performance -Ga2O3 Nano-Membrane Field Effect Transistors on a High Thermal Conductivity Diamond Substrate

First demonstration of robust tri-gateβ-Ga2O3nano-membrane field-effect transistors

First demonstration of robust tri-gate β-Ga 2 O 3 nano-membrane field-effect transistors

First demonstration of robust tri-gate β-Ga2O3 nano-membrane field-effect transistors

Alleviation of Self-Heating Effect in Top-Gated Ultrathin In2O3 FETs Using a Thermal Adhesion Layer

Ultraviolet Light-Based Current-Voltage Method for Simultaneous Extraction of Donor- and Acceptor-Like Interface Traps in \beta -Ga2O3 FETs

Structural and Material Innovations for High Performance Beta-Gallium Oxide Nano-Membrane Fets

Alleviation of Self-Heating Effect in Top-Gated Ultrathin In 2 O 3 FETs Using a Thermal Adhesion Layer

First Experimental Demonstration of Robust HZO/β-Ga₂O₃ Ferroelectric Field-Effect Transistors as Synaptic Devices for Artificial Intelligence Applications in a High-Temperature Environment

Enhancement of Thermal Transfer From β-Ga2O3 Nano-Membrane Field-Effect Transistors to High Thermal Conductivity Substrate by Inserting an Interlayer

Enhancement of Thermal Transfer From β-Ga 2 O 3 Nano-Membrane Field-Effect Transistors to High Thermal Conductivity Substrate by Inserting an Interlayer

Alleviation of Self-Heating Effect in Top-Gated Ultrathin In } O } FETs Using a Thermal Adhesion Layer

Ultraviolet Light-Based Current–Voltage Method for Simultaneous Extraction of Donor- and Acceptor-Like Interface Traps in $\beta$ -Ga 2 O 3 FETs

BEOL Compatible Indium-Tin-Oxide Transistors: Switching of Ultrahigh-Density 2-D Electron Gas Over 0.8 × 1014/cm2 at Oxide/Oxide Interface by the Change of Ferroelectric Polarization

BEOL Compatible Indium-Tin-Oxide Transistors: Switching of Ultrahigh-Density 2-D Electron Gas Over 0.8 × 10 14 /cm 2 at Oxide/Oxide Interface by the Change of Ferroelectric Polarization

Ultraviolet Light-Based Current–Voltage Method for Simultaneous Extraction of Donor- and Acceptor-Like Interface Traps in [Formula Omitted]-Ga2O3 FETs

First demonstration of robust tri-gate β -Ga 2 O 3 nano-membrane field-effect transistors

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