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New insights into thermomechanical behavior of GeTe thin films during crystallization

Acta materialia, 2020-06, Vol.191, p.60-69

2020

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Spin‐Orbit Readout Using Thin Films of Topological Insulator Sb2Te3 Deposited by Industrial Magnetron Sputtering

Advanced functional materials, 2023-10, Vol.33 (44)

2023

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Nanocomposites of chalcogenide phase-change materials: from C-doping of thin films to advanced multilayers

Journal of materials chemistry. C, Materials for optical and electronic devices, 2022-12, Vol.11 (1), p.269-284

2022

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Phase-change materials for non-volatile memory devices: from technological challenges to materials science issues

Semiconductor science and technology, 2018-01, Vol.33 (1), p.13002

2018

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Innovative Nanocomposites for Low Power Phase‐Change Memory: GeTe/C Multilayers

Physica status solidi. PSS-RRL. Rapid research letters, 2022-09, Vol.16 (9), p.n/a

2022

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Quantitative Scanning Transmission Electron Microscopy–High-Angle-Annular Dark-Field Study of the Structure of Pseudo-2D Sb2Te3 Films Grown by (Quasi) Van der Waals Epitaxy

2024

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Origin of the Unusual High Optical Nonlinearities Observed in Glassy Chalcogenides

Advanced optical materials, 2023-12, Vol.11 (24), p.n/a

2023

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Phase-change memories: materials science, technological applications and perspectives

Journal of physics. D, Applied physics, 2020-10, Vol.53 (44), p.440201

2020

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Impact of Stoichiometry on the Structure of van der Waals Layered GeTe/Sb2Te3 Superlattices Used in Interfacial Phase‐Change Memory (iPCM) Devices

Small (Weinheim an der Bergstrasse, Germany), 2018-06, Vol.14 (24), p.n/a

2018

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Ovonic Threshold Switching in Se‐Rich GexSe1−x Glasses from an Atomistic Point of View: The Crucial Role of the Metavalent Bonding Mechanism

Physica status solidi. PSS-RRL. Rapid research letters, 2020-05, Vol.14 (5), p.n/a

2020

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Impact of interfaces on scenario of crystallization of phase change materials

Acta materialia, 2016-05, Vol.110, p.142-148

2016

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Phase‐Change and Ovonic Materials (Second Edition)

Physica status solidi. PSS-RRL. Rapid research letters, 2021-03, Vol.15 (3), p.n/a

2021

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Toward ultimate nonvolatile resistive memories: The mechanism behind ovonic threshold switching revealed

Science advances, 2020-02, Vol.6 (9), p.eaay2830-eaay2830

2020

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Laser Generation of Sub‐Micrometer Wrinkles in a Chalcogenide Glass Film as Physical Unclonable Functions

Advanced materials (Weinheim), 2020-09, Vol.32 (38), p.e2003032-n/a

2020

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Phase‐Change and Ovonic Materials (Fourth Edition)

Physica status solidi. PSS-RRL. Rapid research letters, 2023-08, Vol.17 (8), p.n/a

2023

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Crystallization of Ge2Sb2Te5 and nitrogren‐doped Ge2Sb2Te5 phase‐change‐materials thin films studied by in situ combined X‐ray scattering techniques

Journal of applied crystallography, 2018-12, Vol.51 (6), p.1691-1705

2018

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Wireless Optical Telecommunications

Bouchet, Olivier

1. Aufl., 2013

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Phase‐Change and Ovonic Materials (Third Edition)

Physica status solidi. PSS-RRL. Rapid research letters, 2022-09, Vol.16 (9), p.n/a

2022

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Heterodyne interferometry applied to the characterization of nonlinear integrated waveguides

Optics letters, 2020-09, Vol.45 (18), p.5053-5056

2020

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Improvement of Phase‐Change Memory Performance by Means of GeTe/Sb2Te3 Superlattices

Physica status solidi. PSS-RRL. Rapid research letters, 2021-03, Vol.15 (3), p.n/a

2021

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Effect of Nitrogen on the Amorphous Structure and Subthreshold Electrical Conduction of GeSeSb‐Based Ovonic Threshold Switching Thin Films

Physica status solidi. PSS-RRL. Rapid research letters, 2020-05, Vol.14 (5), p.n/a

2020

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Structural change with the resistance drift phenomenon in amorphous GeTe phase change materials' thin films

Journal of physics. D, Applied physics, 2016-01, Vol.49 (3), p.35305-35310

2016

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Vibrational properties and stabilization mechanism of the amorphous phase of doped GeTe

Physical review. B, Condensed matter and materials physics, 2013-07, Vol.88 (1), Article 014203

2013

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Overcoming the Thermal Stability Limit of Chalcogenide Phase‐Change Materials for High‐Temperature Applications in GeSe1−xTex Thin Films

Physica status solidi. PSS-RRL. Rapid research letters, 2021-03, Vol.15 (3), p.n/a

2021

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Thermal conductivity of amorphous and crystalline GeTe thin film at high temperature: Experimental and theoretical study

Physical review. B, 2020-06, Vol.101 (21), Article 214305

2020

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New insights into thermomechanical behavior of GeTe thin films during crystallization

Spin‐Orbit Readout Using Thin Films of Topological Insulator Sb2Te3 Deposited by Industrial Magnetron Sputtering

Nanocomposites of chalcogenide phase-change materials: from C-doping of thin films to advanced multilayers

Phase-change materials for non-volatile memory devices: from technological challenges to materials science issues

Innovative Nanocomposites for Low Power Phase‐Change Memory: GeTe/C Multilayers

Quantitative Scanning Transmission Electron Microscopy–High-Angle-Annular Dark-Field Study of the Structure of Pseudo-2D Sb2Te3 Films Grown by (Quasi) Van der Waals Epitaxy

Origin of the Unusual High Optical Nonlinearities Observed in Glassy Chalcogenides

Phase-change memories: materials science, technological applications and perspectives

Impact of Stoichiometry on the Structure of van der Waals Layered GeTe/Sb2Te3 Superlattices Used in Interfacial Phase‐Change Memory (iPCM) Devices

Ovonic Threshold Switching in Se‐Rich GexSe1−x Glasses from an Atomistic Point of View: The Crucial Role of the Metavalent Bonding Mechanism

Impact of interfaces on scenario of crystallization of phase change materials

Phase‐Change and Ovonic Materials (Second Edition)

Toward ultimate nonvolatile resistive memories: The mechanism behind ovonic threshold switching revealed

Laser Generation of Sub‐Micrometer Wrinkles in a Chalcogenide Glass Film as Physical Unclonable Functions

Phase‐Change and Ovonic Materials (Fourth Edition)

Crystallization of Ge2Sb2Te5 and nitrogren‐doped Ge2Sb2Te5 phase‐change‐materials thin films studied by in situ combined X‐ray scattering techniques

Wireless Optical Telecommunications

Phase‐Change and Ovonic Materials (Third Edition)

Heterodyne interferometry applied to the characterization of nonlinear integrated waveguides

Improvement of Phase‐Change Memory Performance by Means of GeTe/Sb2Te3 Superlattices

Effect of Nitrogen on the Amorphous Structure and Subthreshold Electrical Conduction of GeSeSb‐Based Ovonic Threshold Switching Thin Films

Structural change with the resistance drift phenomenon in amorphous GeTe phase change materials' thin films

Vibrational properties and stabilization mechanism of the amorphous phase of doped GeTe

Overcoming the Thermal Stability Limit of Chalcogenide Phase‐Change Materials for High‐Temperature Applications in GeSe1−xTex Thin Films

Thermal conductivity of amorphous and crystalline GeTe thin film at high temperature: Experimental and theoretical study

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