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Impacts of plasma-induced damage due to UV light irradiation during etching on Ge fin fabrication and device performance of Ge fin field-effect transistors

Applied physics express, 2017-02, Vol.10 (2), p.26501

2017

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Spin relaxation in Si nanoclusters embedded in free-standing SiGe nanocolumns

Applied physics letters, 2017-05, Vol.110 (20)

2017

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Fabrication of FinFETs by Damage-Free Neutral-Beam Etching Technology

IEEE transactions on electron devices, 2006-08, Vol.53 (8), p.1826-1833

2006

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High Electron Mobility Germanium FinFET Fabricated by Atomic Layer Defect-Free and Roughness-Free Etching

IEEE open journal of nanotechnology, 2021, Vol.2, p.26-30

2021

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50 nm gate electrode patterning using a neutral-beam etching system

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2004-07, Vol.22 (4), p.1506-1512

2004

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Damage-free metal-oxide-semiconductor gate electrode patterning on thin HfSiON film using neutral beam etching

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2006-07, Vol.24 (4), p.1414-1420

2006

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Microfabrication of surface acoustic wave devices with AlN thin film deposited on half‐inch quartz wafer

Electrical engineering in Japan, 2022-12, Vol.215 (4), p.n/a

2022

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Atomic layer germanium etching for 3D Fin-FET using chlorine neutral beam

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2019-03, Vol.37 (2)

2019

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Structural optimization and quantum size effect of Si-nanocrystals in SiC interlayer fabricated with bio-template

Materials research express, 2019-03, Vol.6 (6), p.65059

2019

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Microfabrication of Surface Acoustic Wave Devices with AlN Thin Film Deposited on Half-inch Quartz Wafer

IEEJ transactions on sensors and micromachines, 2022-09, Vol.142 (9), p.248-253

2022

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Spin relaxation in Si nanoclusters embedded in free-standing SiGenanocolumns

Applied physics letters, 2017-05, Vol.110 (20)

2017

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Atomic layer defect-free etching for germanium using HBr neutral beam

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2019-09, Vol.37 (5)

2019

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Fabrication of a Vertical-Channel Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistor Using a Neutral Beam Etching

Japanese Journal of Applied Physics, 2006-03, Vol.45 (3L), p.L279

2006

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High-Performance GaN MOSHEMTs Fabricated With ALD Al2O3 Dielectric and NBE Gate Recess Technology for High Frequency Power Applications

IEEE electron device letters, 2017-06, Vol.38 (6), p.771-774

2017

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Mechanism of C4F8 dissociation in parallel-plate-type plasma

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 1999-09, Vol.17 (5), p.2557-2571

1999

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High-Performance GaN MOSHEMTs Fabricated With ALD Al 2 O 3 Dielectric and NBE Gate Recess Technology for High Frequency Power Applications

IEEE electron device letters, 2017-06, Vol.38 (6), p.771-774

2017

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New Fabrication Technology of Fin Field Effect Transistors Using Neutral-Beam Etching

Japanese Journal of Applied Physics, 2006-06, Vol.45 (6S), p.5513

2006

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AlGaN/GaN HEMTs With Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications

IEEE electron device letters, 2016-11, Vol.37 (11), p.1395-1398

2016

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Investigation of ion transportation in high-aspect-ratio holes from fluorocarbon plasma for SiO2 etching

Thin solid films, 2000-10, Vol.374 (2), p.181-189

2000

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Mechanism of Radical Control in Capacitive RF Plasma for ULSI Processing

Japanese Journal of Applied Physics, 1998-04, Vol.37 (4S), p.2394

1998

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Corrections to "AlGaN/GaN HEMTs With Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications" [Nov 16 1395-1398]

IEEE electron device letters, 2017-01, Vol.38 (1), p.149-149

2017

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Defect-free germanium etching for 3D Fin MOSFET using neutral beam etching

2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO), 2016, p.816-818

2016

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X-ray mask distortion induced in back-etching preceding subtractive fabrication : Resist and absorber stress effect

Japanese Journal of Applied Physics, 1996-05, Vol.35 (5A), p.2845-2850

1996

Volltextzugriff (PDF)

Damage-free metal-oxide-semiconductor gate electrode patterningon thin HfSiON film using neutral beam etching

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2006-06, Vol.24 (4), p.1414-1420

2006

Volltextzugriff (PDF)

Plasma-Wall Interactions in Dual Frequency Narrow-Gap Reactive Ion Etching System

Japanese Journal of Applied Physics, 1998-12, Vol.37 (12S), p.6899

1998

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Impacts of plasma-induced damage due to UV light irradiation during etching on Ge fin fabrication and device performance of Ge fin field-effect transistors

Spin relaxation in Si nanoclusters embedded in free-standing SiGe nanocolumns

Fabrication of FinFETs by Damage-Free Neutral-Beam Etching Technology

High Electron Mobility Germanium FinFET Fabricated by Atomic Layer Defect-Free and Roughness-Free Etching

50 nm gate electrode patterning using a neutral-beam etching system

Damage-free metal-oxide-semiconductor gate electrode patterning on thin HfSiON film using neutral beam etching

Microfabrication of surface acoustic wave devices with AlN thin film deposited on half‐inch quartz wafer

Atomic layer germanium etching for 3D Fin-FET using chlorine neutral beam

Structural optimization and quantum size effect of Si-nanocrystals in SiC interlayer fabricated with bio-template

Microfabrication of Surface Acoustic Wave Devices with AlN Thin Film Deposited on Half-inch Quartz Wafer

Spin relaxation in Si nanoclusters embedded in free-standing SiGenanocolumns

Atomic layer defect-free etching for germanium using HBr neutral beam

Fabrication of a Vertical-Channel Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistor Using a Neutral Beam Etching

High-Performance GaN MOSHEMTs Fabricated With ALD Al2O3 Dielectric and NBE Gate Recess Technology for High Frequency Power Applications

Mechanism of C4F8 dissociation in parallel-plate-type plasma

High-Performance GaN MOSHEMTs Fabricated With ALD Al 2 O 3 Dielectric and NBE Gate Recess Technology for High Frequency Power Applications

New Fabrication Technology of Fin Field Effect Transistors Using Neutral-Beam Etching

AlGaN/GaN HEMTs With Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications

Investigation of ion transportation in high-aspect-ratio holes from fluorocarbon plasma for SiO2 etching

Mechanism of Radical Control in Capacitive RF Plasma for ULSI Processing

Corrections to "AlGaN/GaN HEMTs With Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications" [Nov 16 1395-1398]

Defect-free germanium etching for 3D Fin MOSFET using neutral beam etching

X-ray mask distortion induced in back-etching preceding subtractive fabrication : Resist and absorber stress effect

Damage-free metal-oxide-semiconductor gate electrode patterningon thin HfSiON film using neutral beam etching

Plasma-Wall Interactions in Dual Frequency Narrow-Gap Reactive Ion Etching System

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