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Progress on and challenges of p-type formation for GaN power devices

Journal of applied physics, 2020-09, Vol.128 (9)

2020

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Observation of domain wall bimerons in chiral magnets

Nature communications, 2021-06, Vol.12 (1), p.3490-3490, Article 3490

2021

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Wide range doping control and defect characterization of GaN layers with various Mg concentrations

Journal of applied physics, 2018-10, Vol.124 (16)

2018

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Defect evolution in Mg ions implanted GaN upon high temperature and ultrahigh N2 partial pressure annealing: Transmission electron microscopy analysis

Journal of applied physics, 2020-03, Vol.127 (10)

2020

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Atomic resolution analysis of extended defects and Mg agglomeration in Mg-ion-implanted GaN and their impacts on acceptor formation

Journal of applied physics, 2022-08, Vol.132 (6)

2022

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Process engineering of GaN power devices via selective-area p-type doping with ion implantation and ultra-high-pressure annealing

Journal of applied physics, 2022-10, Vol.132 (13)

2022

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Suppression of positive bias instability by inserting polarized AlN interlayer at AlSiO/p-type GaN interface in metal–oxide–semiconductor field-effect transistor

Applied physics letters, 2024-07, Vol.125 (2)

2024

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Fabrication of β-Mn type Co–Zn–Mn(001) film on MgO single crystal substrate

AIP advances, 2023-02, Vol.13 (2), p.025331-025331-5

2023

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Demonstrative operation of four-terminal memristive devices fabricated on reduced TiO2 single crystals

Scientific reports, 2019-02, Vol.9 (1), p.2601-2601, Article 2601

2019

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Effect of Ultra‐High‐Pressure Annealing on Defect Reactions in Ion‐Implanted GaN Studied by Positron Annihilation

physica status solidi (b), 2022-10, Vol.259 (10), p.n/a

2022

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Gate Tuning of Synaptic Functions Based on Oxygen Vacancy Distribution Control in Four-Terminal TiO2−x Memristive Devices

Scientific reports, 2019-07, Vol.9 (1), p.1-7, Article 10013

2019

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Overview of carrier compensation in GaN layers grown by MOVPE: toward the application of vertical power devices

Japanese Journal of Applied Physics, 2020-01, Vol.59 (SA), p.SA0804

2020

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Analysis of Ti valence states in resistive switching regions of a rutile TiO2−x four-terminal memristive device

Japanese Journal of Applied Physics, 2018-06, Vol.57 (6S3)

2018

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In-situ electron holography of surface potential response to gate voltage application in a sub-30-nm gate-length metal-oxide-semiconductor field-effect transistor

Applied physics letters, 2012-04, Vol.100 (14), p.143508-143508-3

2012

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Effects of plasma shield plate design on epitaxial GaN films grown for large-sized wafers in radical-enhanced metalorganic chemical vapor deposition

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2019-05, Vol.37 (3)

2019

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Effect of N2/H2 plasma on GaN substrate cleaning for homoepitaxial GaN growth by radical-enhanced metalorganic chemical vapor deposition (REMOCVD)

AIP advances, 2018-11, Vol.8 (11), p.115116-115116-5

2018

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Analytical transmission electron microscopy of hydrogen-induced degradation in ferroelectric Pb(Zr, Ti)O3 on a Pt electrode

Applied physics letters, 1998-10, Vol.73 (14), p.1955-1957

Ikarashi, Nobuyuki

1998

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Single-Step, Low-Temperature Simultaneous Formations and in Situ Binding of Tin Oxide Nanoparticles to Graphene Nanosheets by In-Liquid Plasma for Potential Applications in Gas Sensing and Lithium-Ion Batteries

ACS applied nano materials, 2019-02, Vol.2 (2), p.649-654

2019

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In-situ electron holography of carrier accumulation at SiO2/InGaZnO4 interface

Japanese Journal of Applied Physics, 2014-02, Vol.53 (3)

2014

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Low-Temperature MoS2 Film Formation Using Sputtering and H2S Annealing

IEEE journal of the Electron Devices Society, 2019-01, Vol.7, p.2-6

2019

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Electronic structure analysis of Zr silicate and Hf silicate films by using spatially resolved valence electron energy-loss spectroscopy

Journal of applied physics, 2003-07, Vol.94 (1), p.480-486

2003

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Nondestructive Warpage Measurements of LSI Chips in a Stacked System in Package by Using High-Energy X-ray Diffraction

Japanese Journal of Applied Physics, 2010-04, Vol.49 (4), p.04DB03-04DB03-5

Toda, Akio

2010

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La–silicate gate dielectrics fabricated by solid phase reaction between La metal and SiO2 underlayers

Applied physics letters, 2003-10, Vol.83 (17), p.3546-3548

2003

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Thermal decomposition of ZrO2/SiO2 bilayer on Si(001) caused by void nucleation and its lateral growth

Applied physics letters, 2002-01, Vol.80 (4), p.559-561

2002

Volltextzugriff (PDF)

Electron holography for analysis of deep submicron devices: Present status and challenges

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2010-01, Vol.28 (1), p.C1-C1D10

2010

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Progress on and challenges of p-type formation for GaN power devices

Observation of domain wall bimerons in chiral magnets

Wide range doping control and defect characterization of GaN layers with various Mg concentrations

Defect evolution in Mg ions implanted GaN upon high temperature and ultrahigh N2 partial pressure annealing: Transmission electron microscopy analysis

Atomic resolution analysis of extended defects and Mg agglomeration in Mg-ion-implanted GaN and their impacts on acceptor formation

Process engineering of GaN power devices via selective-area p-type doping with ion implantation and ultra-high-pressure annealing

Suppression of positive bias instability by inserting polarized AlN interlayer at AlSiO/p-type GaN interface in metal–oxide–semiconductor field-effect transistor

Fabrication of β-Mn type Co–Zn–Mn(001) film on MgO single crystal substrate

Demonstrative operation of four-terminal memristive devices fabricated on reduced TiO2 single crystals

Effect of Ultra‐High‐Pressure Annealing on Defect Reactions in Ion‐Implanted GaN Studied by Positron Annihilation

Gate Tuning of Synaptic Functions Based on Oxygen Vacancy Distribution Control in Four-Terminal TiO2−x Memristive Devices

Overview of carrier compensation in GaN layers grown by MOVPE: toward the application of vertical power devices

Analysis of Ti valence states in resistive switching regions of a rutile TiO2−x four-terminal memristive device

In-situ electron holography of surface potential response to gate voltage application in a sub-30-nm gate-length metal-oxide-semiconductor field-effect transistor

Effects of plasma shield plate design on epitaxial GaN films grown for large-sized wafers in radical-enhanced metalorganic chemical vapor deposition

Effect of N2/H2 plasma on GaN substrate cleaning for homoepitaxial GaN growth by radical-enhanced metalorganic chemical vapor deposition (REMOCVD)

Analytical transmission electron microscopy of hydrogen-induced degradation in ferroelectric Pb(Zr, Ti)O3 on a Pt electrode

Single-Step, Low-Temperature Simultaneous Formations and in Situ Binding of Tin Oxide Nanoparticles to Graphene Nanosheets by In-Liquid Plasma for Potential Applications in Gas Sensing and Lithium-Ion Batteries

In-situ electron holography of carrier accumulation at SiO2/InGaZnO4 interface

Low-Temperature MoS2 Film Formation Using Sputtering and H2S Annealing

Electronic structure analysis of Zr silicate and Hf silicate films by using spatially resolved valence electron energy-loss spectroscopy

Nondestructive Warpage Measurements of LSI Chips in a Stacked System in Package by Using High-Energy X-ray Diffraction

La–silicate gate dielectrics fabricated by solid phase reaction between La metal and SiO2 underlayers

Thermal decomposition of ZrO2/SiO2 bilayer on Si(001) caused by void nucleation and its lateral growth

Electron holography for analysis of deep submicron devices: Present status and challenges

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