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Controllable Growth of Nanoscale Conductive Filaments in Solid-Electrolyte-Based ReRAM by Using a Metal Nanocrystal Covered Bottom Electrode

ACS nano, 2010-10, Vol.4 (10), p.6162-6168

2010

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Confining Cation Injection to Enhance CBRAM Performance by Nanopore Graphene Layer

Small (Weinheim an der Bergstrasse, Germany), 2017-09, Vol.13 (35), p.n/a

2017

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Dual-band, polarization-insensitive metamaterial perfect absorber based on monolayer graphene in the mid-infrared range

Results in physics, 2019-06, Vol.13, p.102313, Article 102313

2019

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A tied Fermi liquid to Luttinger liquid model for nonlinear transport in conducting polymers

Nature communications, 2021-01, Vol.12 (1), p.58-58, Article 58

2021

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Possible Luttinger liquid behavior of edge transport in monolayer transition metal dichalcogenide crystals

Nature communications, 2020-01, Vol.11 (1), p.659-659, Article 659

2020

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Chemical ordering suppresses large-scale electronic phase separation in doped manganites

Nature communications, 2016-04, Vol.7 (1), p.11260-11260, Article 11260

2016

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Ultra-Broadband High-Efficiency Solar Absorber Based on Double-Size Cross-Shaped Refractory Metals

Nanomaterials (Basel, Switzerland), 2020-03, Vol.10 (3), p.552

2020

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Wafer-Scale Fabrication of Ultra-High Aspect Ratio, Microscale Silicon Structures with Smooth Sidewalls Using Metal Assisted Chemical Etching

Micromachines (Basel), 2023-01, Vol.14 (1), p.179

2023

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Unexpected Intermediate State Photoinduced in the Metal-Insulator Transition of Submicrometer Phase-Separated Manganites

Physical review letters, 2018-06, Vol.120 (26), p.267202-267202, Article 267202

2018

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Preparation of TiO2 nanotube arrays with efficient photocatalytic performance and super-hydrophilic properties utilizing anodized voltage method

Results in physics, 2019-09, Vol.14, p.102499, Article 102499

2019

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High-efficiency V-shaped phase gratings to suppress high order diffractions

AIP advances, 2019-01, Vol.9 (1), p.015308-015308-6

2019

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Controllable p‐to‐n Type Conductance Transition in Top‐Gated Graphene Field Effect Transistor by Interface Trap Engineering

Advanced electronic materials, 2020-09, Vol.6 (9), p.n/a

2020

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Metal‐Contact‐Induced Transition of Electrical Transport in Monolayer MoS2: From Thermally Activated to Variable‐Range Hopping

Advanced electronic materials, 2024-03, Vol.10 (3), p.n/a

2024

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Large‐Scale Ultrathin Channel Nanosheet‐Stacked CFET Based on CVD 1L MoS2/WSe2

Advanced electronic materials, 2023-02, Vol.9 (2), p.n/a

2023

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High carrier mobility in suspended-channel graphene field effect transistors

Applied physics letters, 2013-11, Vol.103 (19)

2013

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Unipolar Resistive Switching Properties of Diamondlike Carbon-Based RRAM Devices

IEEE electron device letters, 2011-06, Vol.32 (6), p.803-805

2011

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Surface Improvement of InAlAs/InGaAs InP-Based HEMT Through Treatments of UV/Ozone and TMAH

IEEE journal of the Electron Devices Society, 2020, Vol.8, p.600-607

2020

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Polarization-Sensitive Structural Colors Based on Anisotropic Silicon Metasurfaces

Photonics, 2023-04, Vol.10 (4), p.448

2023

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Overcoming the Dilemma Between RESET Current and Data Retention of RRAM by Lateral Dissolution of Conducting Filament

IEEE electron device letters, 2013-07, Vol.34 (7), p.873-875

2013

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Metal‐Contact‐Induced Transition of Electrical Transport in Monolayer MoS2: From Thermally Activated to Variable‐Range Hopping

Advanced electronic materials, 2019-07, Vol.5 (7), p.n/a

2019

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Manipulating electronic phase separation in strongly correlated oxides with an ordered array of antidots

Proceedings of the National Academy of Sciences - PNAS, 2015-08, Vol.112 (31), p.9558-9562

2015

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Inverted process for graphene integrated circuits fabrication

Nanoscale, 2014-06, Vol.6 (11), p.5826-5830

2014

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Performance Breakthrough in Gate-All-Around Nanowire n- and p-Type MOSFETs Fabricated on Bulk Silicon Substrate

IEEE transactions on electron devices, 2012-07, Vol.59 (7), p.1885-1890

2012

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Full-Color and Anti-Counterfeit Printings with All-Dielectric Chiral Metasurfaces

Photonics, 2023-04, Vol.10 (4), p.401

2023

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Si3N4/Al2O3 Stack Layer Passivation for InAlAs/InGaAs InP-Based HEMTs With Good DC and RF Performances

IEEE journal of the Electron Devices Society, 2018, Vol.6, p.49-54

2018

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Controllable Growth of Nanoscale Conductive Filaments in Solid-Electrolyte-Based ReRAM by Using a Metal Nanocrystal Covered Bottom Electrode

Confining Cation Injection to Enhance CBRAM Performance by Nanopore Graphene Layer

Dual-band, polarization-insensitive metamaterial perfect absorber based on monolayer graphene in the mid-infrared range

A tied Fermi liquid to Luttinger liquid model for nonlinear transport in conducting polymers

Possible Luttinger liquid behavior of edge transport in monolayer transition metal dichalcogenide crystals

Chemical ordering suppresses large-scale electronic phase separation in doped manganites

Ultra-Broadband High-Efficiency Solar Absorber Based on Double-Size Cross-Shaped Refractory Metals

Wafer-Scale Fabrication of Ultra-High Aspect Ratio, Microscale Silicon Structures with Smooth Sidewalls Using Metal Assisted Chemical Etching

Unexpected Intermediate State Photoinduced in the Metal-Insulator Transition of Submicrometer Phase-Separated Manganites

Preparation of TiO2 nanotube arrays with efficient photocatalytic performance and super-hydrophilic properties utilizing anodized voltage method

High-efficiency V-shaped phase gratings to suppress high order diffractions

Controllable p‐to‐n Type Conductance Transition in Top‐Gated Graphene Field Effect Transistor by Interface Trap Engineering

Metal‐Contact‐Induced Transition of Electrical Transport in Monolayer MoS2: From Thermally Activated to Variable‐Range Hopping

Large‐Scale Ultrathin Channel Nanosheet‐Stacked CFET Based on CVD 1L MoS2/WSe2

High carrier mobility in suspended-channel graphene field effect transistors

Unipolar Resistive Switching Properties of Diamondlike Carbon-Based RRAM Devices

Surface Improvement of InAlAs/InGaAs InP-Based HEMT Through Treatments of UV/Ozone and TMAH

Polarization-Sensitive Structural Colors Based on Anisotropic Silicon Metasurfaces

Overcoming the Dilemma Between RESET Current and Data Retention of RRAM by Lateral Dissolution of Conducting Filament

Metal‐Contact‐Induced Transition of Electrical Transport in Monolayer MoS2: From Thermally Activated to Variable‐Range Hopping

Manipulating electronic phase separation in strongly correlated oxides with an ordered array of antidots

Inverted process for graphene integrated circuits fabrication

Performance Breakthrough in Gate-All-Around Nanowire n- and p-Type MOSFETs Fabricated on Bulk Silicon Substrate

Full-Color and Anti-Counterfeit Printings with All-Dielectric Chiral Metasurfaces

Si3N4/Al2O3 Stack Layer Passivation for InAlAs/InGaAs InP-Based HEMTs With Good DC and RF Performances

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