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A triple channel HEMT on InP (Camel HEMT) for large-signal high-speed applications

IEEE transactions on electron devices, 1999-01, Vol.46 (1), p.32-37

1999

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Tunable UV-flash krypton lamp array useful for large area deposition and in situ UV annealing of Si-based dielectrics

Applied surface science, 1995-02, Vol.86 (1), p.286-293

1995

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Low temperature silicon nitride deposition by direct photolysis using high power krypton flash lamps

Electronics letters, 1994-03, Vol.30 (7), p.602-603

1994

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Bulk and surface properties of RTCVD Si 3N 4 films for optical device applications

Applied surface science, 1993, Vol.69 (1), p.198-203

1993

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Dry etch recess of an InGaAs/InAlAs/InP HEMT like structure using a low energy high density SiCl/sub 4/ plasma (ICP)

Conference Proceedings. 1998 International Conference on Indium Phosphide and Related Materials (Cat. No.98CH36129), 1998, p.793-796

1998

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Rapid thermal chemical vapour deposition of SiOxNy films

Applied surface science, 1992, Vol.54, p.125-129

1992

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Rapid thermal chemical vapour deposition of SiO xN y films

Applied surface science, 1992, Vol.54, p.125-129

1992

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Surface mechanisms in the UVCVD of SiO 2 films

Applied surface science, 1992, Vol.54, p.445-452

1992

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In Situ Time-Resolved Reflectivity Measurements of Growth Kinetics During Solid Phase Epitaxy: A Tool To Estimate Interface Non Planarity During Growth

MRS proceedings, 1985, Vol.51, Article 167

1985

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Photo-assisted deposition of thin films on III–V semiconductors with UV and IR lamps

Applied surface science, 1990-12, Vol.46 (1), p.175-188

1990

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Raman Vibrational Study of Pulsed Laser Annealing of Implanted GaAs

MRS proceedings, 1983, Vol.23, Article 713

1983

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Bulk and surface properties of RTCVD Si3N4 films for optical device applications

Applied surface science, 1993-05, Vol.69 (1-4), p.198-203

1993

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Surface mechanisms in the UVCVD of SiO2 films

Applied surface science, 1992, Vol.54, p.445-452

1992

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Differences in the SiO 2/InP interfaces obtained by thermal and UV-induced chemical vapour deposition

Applied surface science, 1992, Vol.56, p.789-794

1992

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Interface structure evolution and impurity effects during solid-phase-epitaxial growth in GaAs

Journal of applied physics, 1986-08, Vol.60 (4), p.1352-1358

1986

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Differences in the SiO2/InP interfaces obtained by thermal and UV-induced chemical vapour deposition

Applied surface science, 1992, Vol.56-58, p.789-794

1992

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Low-pressure photochemical vapour deposition of silicon dioxidel on InP substrates

Electronics letters, 1988, Vol.24 (8), p.488

1988

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Nonalloyed ohmic contacts to n-GaAs by CW laser-assisted diffusion from a SnO2/SiO2source

IEEE transactions on electron devices, 1981-05, Vol.28 (5), p.607-609

1981

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Nonalloyed ohmic contacts to n-GaAs by CW laser-assisted diffusion from a SnO 2 /SiO 2 source

IEEE transactions on electron devices, 1981-05, Vol.28 (5), p.607-609

1981

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Cubic phase gallium nitride epitaxially formed on GaAs or GaInAs at low temperature with a NH3 DECR plasma

Conference Proceedings. 1997 International Conference on Indium Phosphide and Related Materials, 1997, p.96-98

1997

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TP-A5 nonalloyed ohmic contacts to n-GaAs by CW laser-assisted diffusion from a SnO 2 /SiO 2 source

IEEE transactions on electron devices, 1980-11, Vol.27 (11), p.2189-2190

1980

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TP-A5 nonalloyed ohmic contacts to n-GaAs by CW laser-assisted diffusion from a SnO2/SiO2source

IEEE transactions on electron devices, 1980-11, Vol.27 (11), p.2189-2190

1980

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Microprobe Raman Analysis of Picosecond Laser Annealing of Implanted Silicon

MRS proceedings, 1982, Vol.13, Article 235

1982

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Thermal and photon-assisted interaction of ammonia, silane and oxygen with indium phosphide substrates

Vacuum, 1990, Vol.41 (1), p.718-719

1990

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Passivation of InGaAs surfaces with an integrated process including an ammonia DECR plasma

Proceedings of 8th International Conference on Indium Phosphide and Related Materials, 1996, p.319-322

1996

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A triple channel HEMT on InP (Camel HEMT) for large-signal high-speed applications

Tunable UV-flash krypton lamp array useful for large area deposition and in situ UV annealing of Si-based dielectrics

Low temperature silicon nitride deposition by direct photolysis using high power krypton flash lamps

Bulk and surface properties of RTCVD Si 3N 4 films for optical device applications

Dry etch recess of an InGaAs/InAlAs/InP HEMT like structure using a low energy high density SiCl/sub 4/ plasma (ICP)

Rapid thermal chemical vapour deposition of SiOxNy films

Rapid thermal chemical vapour deposition of SiO xN y films

Surface mechanisms in the UVCVD of SiO 2 films

In Situ Time-Resolved Reflectivity Measurements of Growth Kinetics During Solid Phase Epitaxy: A Tool To Estimate Interface Non Planarity During Growth

Photo-assisted deposition of thin films on III–V semiconductors with UV and IR lamps

Raman Vibrational Study of Pulsed Laser Annealing of Implanted GaAs

Bulk and surface properties of RTCVD Si3N4 films for optical device applications

Surface mechanisms in the UVCVD of SiO2 films

Differences in the SiO 2/InP interfaces obtained by thermal and UV-induced chemical vapour deposition

Interface structure evolution and impurity effects during solid-phase-epitaxial growth in GaAs

Differences in the SiO2/InP interfaces obtained by thermal and UV-induced chemical vapour deposition

Low-pressure photochemical vapour deposition of silicon dioxidel on InP substrates

Nonalloyed ohmic contacts to n-GaAs by CW laser-assisted diffusion from a SnO2/SiO2source

Nonalloyed ohmic contacts to n-GaAs by CW laser-assisted diffusion from a SnO 2 /SiO 2 source

Cubic phase gallium nitride epitaxially formed on GaAs or GaInAs at low temperature with a NH3 DECR plasma

TP-A5 nonalloyed ohmic contacts to n-GaAs by CW laser-assisted diffusion from a SnO 2 /SiO 2 source

TP-A5 nonalloyed ohmic contacts to n-GaAs by CW laser-assisted diffusion from a SnO2/SiO2source

Microprobe Raman Analysis of Picosecond Laser Annealing of Implanted Silicon

Thermal and photon-assisted interaction of ammonia, silane and oxygen with indium phosphide substrates

Passivation of InGaAs surfaces with an integrated process including an ammonia DECR plasma

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