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Trap generation and occupation dynamics in SiO2 under charge injection stress

Journal of applied physics, 1986-09, Vol.60 (6), p.2024-2035

1986

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The effect of hydrogen on trap generation, positive charge trapping, and time-dependent dielectric breakdown of gate oxides

IEEE electron device letters, 1988-06, Vol.9 (6), p.287-289

1988

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Dynamic model of trapping-detrapping in SiO2

Journal of applied physics, 1985-09, Vol.58 (6), p.2252-2261

1985

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High-field and current-induced positive charge in thermal SiO2 layers

Journal of applied physics, 1985-04, Vol.57 (8), p.2830-2839

1985

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SiO2-induced substrate current and its relation to positive charge in field-effect transistors

Journal of applied physics, 1986-02, Vol.59 (3), p.824-832

1986

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High field current induced-positive charge transients in SiO2

Journal of applied physics, 1983-10, Vol.54 (10), p.5793-5800

1983

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Determination of SiO2 trapped charge distribution by capacitance-voltage analysis of undoped polycrystalline silicon-oxide-silicon capacitors

Applied physics letters, 1984-02, Vol.44 (4), p.417-419

1984

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A novel floating-gate method for measurement of ultra-low hole and electron gate currents in MOS transistors

IEEE electron device letters, 1986-10, Vol.7 (10), p.561-563

Nissan-Cohen, Y.

1986

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Buried and graded/buried LDD structures for improved hot-electron reliability

IEEE electron device letters, 1986-06, Vol.7 (6), p.380-382

1986

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Measurement of transient heating in a 1.1 mu m PMOSFET using thermal imaging

IEEE electron device letters, 1991-11, Vol.12 (11), p.611-613

1991

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Analytical explanation to double-hump substrate current in funnel-shape transistors

IEEE electron device letters, 1986-06, Vol.7 (6), p.344-346

Nissan-Cohen, Y.

1986

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The effect of gate material on oxide degradation due to charge-injection in metal-oxide-semiconductor capacitors

Solid-state electronics, 1988-02, Vol.31 (2), p.245-250

1988

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Measurement of Fowler-Nordheim tunneling currents in MOS structures under charge trapping conditions

Solid-state electronics, 1985-01, Vol.28 (7), p.717-720

1985

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Measurement and analysis of hot-carrier-stress effect on NMOSFET's using substrate current characterization

IEEE electron device letters, 1986-07, Vol.7 (7), p.451-453

1986

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Evaluation of 850°C wet oxide as the gate dielectric in a 0.8-μm CMOS process

IEEE transactions on electron devices, 1991, Vol.38 (11), p.2433-2441

1991

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Evaluation of 850 deg C wet oxide as the gate dielectric in a0.8-mu m CMOS process

IEEE transactions on electron devices, 1991-11, Vol.38 (11), p.2433-2441

1991

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Measurement of transient heating in a 1.1 mu m PMOSFET usingthermal imaging

IEEE electron device letters, 1991-11, Vol.12 (11), p.611-613

1991

Volltextzugriff (PDF)

Evaluation of 850 degree C wet oxide as the gate dielectric in a 0.8- mu m CMOS process

IEEE transactions on electron devices, 1991-01, Vol.38 (11), p.2433-2441

1991

Volltextzugriff (PDF)

Evaluation of 850 degrees C wet oxide as the gate dielectric in a 0.8- mu m CMOS process

IEEE transactions on electron devices, 1991-11, Vol.38 (11), p.2433-2441

1991

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LOPOS: Advanced Device Isolation for a 0.8 μm CMOS/BULK Process Technology

Journal of the Electrochemical Society, 1989-07, Vol.136 (7), p.1992-1996

1989

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SiO sub 2 -induced substrate current and its relation to positive charge in field-effect transistors

Journal of applied physics, 1986-01, Vol.59 (3), p.824-832

1986

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IVB-3 dynamic trapping-detrapping phenomena in thermal SiO 2

IEEE transactions on electron devices, 1985-11, Vol.32 (11), p.2542-2543

1985

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IVB-3 dynamic trapping-detrapping phenomena in thermal SiO(2 < /inf >

IEEE transactions on electron devices, 1985-11, Vol.32 (11), p.2542-2543

1985

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IVB-3 dynamic trapping-detrapping phenomena in thermal SiO2

IEEE transactions on electron devices, 1985-11, Vol.32 (11), p.2542-2543

1985

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Dynamic model of trapping-detrapping in SiO sub 2

Journal of applied physics, 1985-01, Vol.58 (6), p.2252-2261

1985

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Trap generation and occupation dynamics in SiO2 under charge injection stress

The effect of hydrogen on trap generation, positive charge trapping, and time-dependent dielectric breakdown of gate oxides

Dynamic model of trapping-detrapping in SiO2

High-field and current-induced positive charge in thermal SiO2 layers

SiO2-induced substrate current and its relation to positive charge in field-effect transistors

High field current induced-positive charge transients in SiO2

Determination of SiO2 trapped charge distribution by capacitance-voltage analysis of undoped polycrystalline silicon-oxide-silicon capacitors

A novel floating-gate method for measurement of ultra-low hole and electron gate currents in MOS transistors

Buried and graded/buried LDD structures for improved hot-electron reliability

Measurement of transient heating in a 1.1 mu m PMOSFET using thermal imaging

Analytical explanation to double-hump substrate current in funnel-shape transistors

The effect of gate material on oxide degradation due to charge-injection in metal-oxide-semiconductor capacitors

Measurement of Fowler-Nordheim tunneling currents in MOS structures under charge trapping conditions

Measurement and analysis of hot-carrier-stress effect on NMOSFET's using substrate current characterization

Evaluation of 850°C wet oxide as the gate dielectric in a 0.8-μm CMOS process

Evaluation of 850 deg C wet oxide as the gate dielectric in a0.8-mu m CMOS process

Measurement of transient heating in a 1.1 mu m PMOSFET usingthermal imaging

Evaluation of 850 degree C wet oxide as the gate dielectric in a 0.8- mu m CMOS process

Evaluation of 850 degrees C wet oxide as the gate dielectric in a 0.8- mu m CMOS process

LOPOS: Advanced Device Isolation for a 0.8 μm CMOS/BULK Process Technology

SiO sub 2 -induced substrate current and its relation to positive charge in field-effect transistors

IVB-3 dynamic trapping-detrapping phenomena in thermal SiO 2

IVB-3 dynamic trapping-detrapping phenomena in thermal SiO(2 < /inf >

IVB-3 dynamic trapping-detrapping phenomena in thermal SiO2

Dynamic model of trapping-detrapping in SiO sub 2

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