UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Overvoltage Failure Process of Cascode GaN Field Effect Transistors

Physica status solidi. A, Applications and materials science, 2024-01

2024

Volltextzugriff (PDF)

A Model of Wafer Warpage for Trench Field‐Plate Power MOSFETs

Physica status solidi. A, Applications and materials science, 2024-10, Vol.221 (20), p.n/a

2024

Volltextzugriff (PDF)

Degradation characteristics of SiC power devices for DC circuit breaker by repetitive unclamped inductive switching test

Microelectronics and reliability, 2019-09, Vol.100-101, p.113417, Article 113417

2019

Volltextzugriff (PDF)

Chloride-Based CVD Growth of Silicon Carbide for Electronic Applications

Chemical reviews, 2012-04, Vol.112 (4), p.2434-2453

2012

Volltextzugriff (PDF)

GaN-based complementary metal–oxide–semiconductor inverter with normally off Pch and Nch MOSFETs fabricated using polarisation-induced holes and electron channels

IET power electronics, 2018-04, Vol.11 (4), p.689-694

2018

Volltextzugriff (PDF)

Investigation of acceptable breakdown voltage variation for parallel-connected SiC MOSFETs during unclamped inductive switching test

Japanese Journal of Applied Physics, 2021-05, Vol.60 (SB), p.SBBD18

2021

Volltextzugriff (PDF)

Scaling Design Effects on Surface Buffer IGBT Characteristics

IEEE journal of the Electron Devices Society, 2022, Vol.10, p.23-28

2022

Volltextzugriff (PDF)

Generation and transportation mechanisms for two-dimensional hole gases in GaN/AlGaN/GaN double heterostructures

Journal of applied physics, 2014-04, Vol.115 (15)

2014

Volltextzugriff (PDF)

Alternated Trench-Gate IGBT for Low Loss and Suppressing Negative Gate Capacitance

IEEE transactions on electron devices, 2020-08, Vol.67 (8), p.3285-3290

2020

Volltextzugriff (PDF)

Design and Analysis of a New Evaluation Circuit for Capacitors Used in a High-Power Three-Phase Inverter

IEEE transactions on industrial electronics (1982), 2016-05, Vol.63 (5), p.2679-2687

2016

Volltextzugriff (PDF)

Paralleled SiC MOSFETs Circuit Breaker with a SiC MPS Diode for Avalanche Voltage Clamping

IEEE open journal of power electronics, 2024-01, Vol.5, p.1-10

2024

Volltextzugriff (PDF)

IGBT Power Module Design for Suppressing Gate Voltage Spike at Digital Gate Control

IEEE access, 2023, Vol.11, p.6632-6640

2023

Volltextzugriff (PDF)

Slit Field Plate Power MOSFET for Improvement of Figure-Of-Merits

IEEE journal of the Electron Devices Society, 2021, Vol.9, p.552-556

2021

Volltextzugriff (PDF)

Comparative numerical study of the effects of rotating and traveling magnetic fields on the carbon transport in the solution growth of SiC crystals

Journal of crystal growth, 2013-01, Vol.362, p.99-102

2013

Volltextzugriff (PDF)

Mechanism of gate voltage spike under digital gate control at IGBT switching operations

Power electronic devices and components, 2024-04, Vol.7, p.100054, Article 100054

2024

Volltextzugriff (PDF)

On-Resistance Limit Estimation of 100 V-class Field-Plate Trench Power MOSFETs Optimized Oxide Thickness

IEEE electron device letters, 2020-07, Vol.41 (7), p.1063-1065

2020

Volltextzugriff (PDF)

Surface Buffer IGBT for High Total Performance

IEEE transactions on electron devices, 2020-08, Vol.67 (8), p.3263-3269

2020

Volltextzugriff (PDF)

Simulation Study on Dual Gate Control of Surface Buffer Insulated Gate Bipolar Transistor for High Switching Controllability

IEEE electron device letters, 2021-06, Vol.42 (6), p.907-910

2021

Volltextzugriff (PDF)

The design considerations of stray inductance for power modules with parallel-connected IGBT chips for a digital gate driver control

Power electronic devices and components, 2023-10, Vol.6, p.100047, Article 100047

2023

Volltextzugriff (PDF)

A simple sensor device for power cycle degradation sensing

Microelectronics and reliability, 2023-08, Vol.147, p.115068, Article 115068

2023

Volltextzugriff (PDF)

Bond wire lift-off detection by gate voltage waveform in IGBT turn-off process enhanced by digital gate control

Power electronic devices and components, 2023-10, Vol.6, p.100052, Article 100052

2023

Volltextzugriff (PDF)

Numerical and experimental investigation of the effect of the solid–liquid interface shape on grown-in defects in a silicon single crystal

Japanese Journal of Applied Physics, 2024-03, Vol.63 (3), p.31006

2024

Volltextzugriff (PDF)

Turn-off switching voltage surge analysis with dependence on IGBT cell design

Japanese Journal of Applied Physics, 2024-02, Vol.63 (2), p.2

2024

Volltextzugriff (PDF)

Numerical and experimental investigation of effect of oxygen concentration on grown-in defects in a Czochralski silicon single crystal

Japanese Journal of Applied Physics, 2023-07, Vol.62 (7), p.71002

2023

Volltextzugriff (PDF)

Improvement Design for Turn-On Switching Characteristics in Surface Buffer Insulated Gate Bipolar Transistor

IEEE electron device letters, 2020-12, Vol.41 (12), p.1814-1816

2020

Volltextzugriff (PDF)

1 – 25 von 281

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(215)
Mit Volltextzugriff
(260)

Publikationsform

Sprache

Englisch
(264)
Japanisch
(18)

Erscheinungsjahr

n.n

Thema

Science & Technology
(210)
Technology
(123)
Physical Sciences
(79)
Physics
(68)
Life Sciences & Biomedicine
(65)
Materials Science
(64)
Physics, Applied
(63)
Engineering
(60)
Materials Science, Multidisciplinary
(56)
Engineering, Electrical & Electronic
(55)
Humans
(36)
Exact Sciences And Technology
(25)
Insulated Gate Bipolar Transistors
(25)
Silicon Carbide
(25)
Crystallography
(21)
Logic Gates
(19)
Animals
(17)
Biological And Medical Sciences
(17)
Semiconductor Devices
(17)
Cross-Disciplinary Physics: Materials Science; Rheology
(16)

15 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 30 Tagen
(1)
... seit 90 Tagen
(2)

Menü

Weitere Dienste

Einstellungen

Overvoltage Failure Process of Cascode GaN Field Effect Transistors

A Model of Wafer Warpage for Trench Field‐Plate Power MOSFETs

Degradation characteristics of SiC power devices for DC circuit breaker by repetitive unclamped inductive switching test

Chloride-Based CVD Growth of Silicon Carbide for Electronic Applications

GaN-based complementary metal–oxide–semiconductor inverter with normally off Pch and Nch MOSFETs fabricated using polarisation-induced holes and electron channels

Investigation of acceptable breakdown voltage variation for parallel-connected SiC MOSFETs during unclamped inductive switching test

Scaling Design Effects on Surface Buffer IGBT Characteristics

Generation and transportation mechanisms for two-dimensional hole gases in GaN/AlGaN/GaN double heterostructures

Alternated Trench-Gate IGBT for Low Loss and Suppressing Negative Gate Capacitance

Design and Analysis of a New Evaluation Circuit for Capacitors Used in a High-Power Three-Phase Inverter

Paralleled SiC MOSFETs Circuit Breaker with a SiC MPS Diode for Avalanche Voltage Clamping

IGBT Power Module Design for Suppressing Gate Voltage Spike at Digital Gate Control

Slit Field Plate Power MOSFET for Improvement of Figure-Of-Merits

Comparative numerical study of the effects of rotating and traveling magnetic fields on the carbon transport in the solution growth of SiC crystals

Mechanism of gate voltage spike under digital gate control at IGBT switching operations

On-Resistance Limit Estimation of 100 V-class Field-Plate Trench Power MOSFETs Optimized Oxide Thickness

Surface Buffer IGBT for High Total Performance

Simulation Study on Dual Gate Control of Surface Buffer Insulated Gate Bipolar Transistor for High Switching Controllability

The design considerations of stray inductance for power modules with parallel-connected IGBT chips for a digital gate driver control

A simple sensor device for power cycle degradation sensing

Bond wire lift-off detection by gate voltage waveform in IGBT turn-off process enhanced by digital gate control

Numerical and experimental investigation of the effect of the solid–liquid interface shape on grown-in defects in a silicon single crystal

Turn-off switching voltage surge analysis with dependence on IGBT cell design

Numerical and experimental investigation of effect of oxygen concentration on grown-in defects in a Czochralski silicon single crystal

Improvement Design for Turn-On Switching Characteristics in Surface Buffer Insulated Gate Bipolar Transistor

Suchergebnisse filtern