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(GaMn)As: GaAs-based III–V diluted magnetic semiconductors grown by molecular beam epitaxy

Journal of crystal growth, 1997-05, Vol.175, p.1063-1068

1997

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Advances in the Understanding of Crystal Growth Mechanisms

1, 1997

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Epitaxial MnAs/GaAs/MnAs trilayer magnetic heterostructures

Applied physics letters, 1999-01, Vol.74 (1), p.64-66

1999

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III–V based magnetic(GaMnAs)/nonmagnetic(AlAs) semiconductor superlattices

Applied physics letters, 1997-09, Vol.71 (13), p.1825-1827

1997

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Organic Redox Systems: Synthesis, Properties, and Applications

Nishinaga, Tohru

1, 2015

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Magnetic and magnetotransport properties of new III-V diluted magnetic semiconductors: GaMnAs

Journal of applied physics, 1997-04, Vol.81 (8), p.4865-4867

1997

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A new way to achieve both selective and lateral growth by molecular beam epitaxy: low angle incidence microchannel epitaxy

Journal of crystal growth, 2000, Vol.208 (1), p.1-10

2000

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Epitaxial ferromagnetic MnAs thin films grown by molecular beam epitaxy on Si (001) substrates

Applied physics letters, 1995-11, Vol.67 (22), p.3349-3351

1995

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Oxygen incorporation mechanism in AlGaAs layers grown by molecular beam epitaxy

Journal of crystal growth, 2003-07, Vol.254 (3), p.310-315

2003

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Persistent pi radical cations: self-association and its steric control in the condensed phase

Organic & biomolecular chemistry, 2005-02, Vol.3 (4), p.561-569

2005

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Optimization of growth condition for wide dislocation-free GaAs on Si substrate by microchannel epitaxy

Journal of crystal growth, 1998-08, Vol.192 (1), p.18-22

1998

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Growth mechanism of beam-induced lateral epitaxy on (0 0 1) GaAs substrate in molecular beam epitaxy

Journal of crystal growth, 2005-03, Vol.276 (1), p.64-71

2005

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A new way to achieve dislocation-free heteroepitaxial growth by molecular beam epitaxy: vertical microchannel epitaxy

Journal of crystal growth, 2002-04, Vol.237, p.1460-1465

2002

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Microchannel epitaxy: an overview

Journal of crystal growth, 2002-04, Vol.237, p.1410-1417

Nishinaga, Tatau

2002

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AFM analysis of sidewall formation in low angle incidence microchannel epitaxy of GaAs

Journal of crystal growth, 2000-12, Vol.220 (4), p.355-363

2000

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Efficiency difference in Ga adatom incorporation in MBE growth of GaAs with As2 and As4 molecular beams

Journal of crystal growth, 2000-04, Vol.211 (1-4), p.416-420

2000

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Synthesis and Structural, Electronic, and Optical Properties of Oligo(thienylfuran)s in Comparison with Oligothiophenes and Oligofurans

Journal of organic chemistry, 2005-02, Vol.70 (4), p.1147-1153

2005

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Lateral growth in molecular beam epitaxy by low angle incidence microchannel epitaxy

Applied surface science, 2000-06, Vol.159, p.270-276

2000

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Terthiophene Radical Cations End-Capped by Bicyclo[2.2.2]octene Units: Formation of Bent π-Dimers Mutually Attracted at the Central Position

Journal of the American Chemical Society, 2006-11, Vol.128 (45), p.14470-14471

2006

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Effect of As molecular species on inter-surface diffusion in GaAs MBE for ridge structure fabrication

Journal of crystal growth, 2001-06, Vol.226 (2), p.179-184

2001

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Hall effect and magnetic properties of III–V based (Ga1−xMnx)As/AlAs magnetic semiconductor superlattices

Journal of applied physics, 1998-06, Vol.83 (11), p.6551-6553

1998

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Epitaxial lateral overgrowth of InP by liquid phase epitaxy

Journal of crystal growth, 1995-01, Vol.146 (1-4), p.314-318

1995

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Surface diffusion length of cation incorporation studied by microprobe-RHEED/SEM MBE

Journal of crystal growth, 1996-05, Vol.163 (1), p.60-66

1996

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Dependence of the degree of selectivity on the Al content during the selective area growth of AlGaAs on GaAs(0 0 1) by PSE/MBE

Journal of crystal growth, 1998-08, Vol.191 (4), p.599-606

1998

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Elementary growth process of molecular beam epitaxy

Journal of crystal growth, 1995-01, Vol.146 (1-4), p.326-333

Nishinaga, T.

1995

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(GaMn)As: GaAs-based III–V diluted magnetic semiconductors grown by molecular beam epitaxy

Advances in the Understanding of Crystal Growth Mechanisms

Epitaxial MnAs/GaAs/MnAs trilayer magnetic heterostructures

III–V based magnetic(GaMnAs)/nonmagnetic(AlAs) semiconductor superlattices

Organic Redox Systems: Synthesis, Properties, and Applications

Magnetic and magnetotransport properties of new III-V diluted magnetic semiconductors: GaMnAs

A new way to achieve both selective and lateral growth by molecular beam epitaxy: low angle incidence microchannel epitaxy

Epitaxial ferromagnetic MnAs thin films grown by molecular beam epitaxy on Si (001) substrates

Oxygen incorporation mechanism in AlGaAs layers grown by molecular beam epitaxy

Persistent pi radical cations: self-association and its steric control in the condensed phase

Optimization of growth condition for wide dislocation-free GaAs on Si substrate by microchannel epitaxy

Growth mechanism of beam-induced lateral epitaxy on (0 0 1) GaAs substrate in molecular beam epitaxy

A new way to achieve dislocation-free heteroepitaxial growth by molecular beam epitaxy: vertical microchannel epitaxy

Microchannel epitaxy: an overview

AFM analysis of sidewall formation in low angle incidence microchannel epitaxy of GaAs

Efficiency difference in Ga adatom incorporation in MBE growth of GaAs with As2 and As4 molecular beams

Synthesis and Structural, Electronic, and Optical Properties of Oligo(thienylfuran)s in Comparison with Oligothiophenes and Oligofurans

Lateral growth in molecular beam epitaxy by low angle incidence microchannel epitaxy

Terthiophene Radical Cations End-Capped by Bicyclo[2.2.2]octene Units: Formation of Bent π-Dimers Mutually Attracted at the Central Position

Effect of As molecular species on inter-surface diffusion in GaAs MBE for ridge structure fabrication

Hall effect and magnetic properties of III–V based (Ga1−xMnx)As/AlAs magnetic semiconductor superlattices

Epitaxial lateral overgrowth of InP by liquid phase epitaxy

Surface diffusion length of cation incorporation studied by microprobe-RHEED/SEM MBE

Dependence of the degree of selectivity on the Al content during the selective area growth of AlGaAs on GaAs(0 0 1) by PSE/MBE

Elementary growth process of molecular beam epitaxy

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