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Simple model for electrical hole spin manipulation in semiconductor quantum dots: Impact of dot material and orientation

Physical review. B, 2019-03, Vol.99 (11), Article 115317

2019

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Effects of Strain on the Carrier Mobility in Silicon Nanowires

Nano letters, 2012-07, Vol.12 (7), p.3545-3550

2012

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Charge transport in chemically doped 2D graphene

Physical review letters, 2008-07, Vol.101 (3), p.036808-036808, Article 036808

2008

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Transport properties of graphene containing structural defects

Physical review. B, Condensed matter and materials physics, 2012-08, Vol.86 (7), Article 075402

2012

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Few-Electron Edge-State Quantum Dots in a Silicon Nanowire Field-Effect Transistor

Nano letters, 2014-04, Vol.14 (4), p.2094-2098

2014

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Gate reflectometry in dense quantum dot arrays

New journal of physics, 2023-03, Vol.25 (3), p.33023

2023

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Quantum calculations of the carrier mobility: Methodology, Matthiessen's rule, and comparison with semi-classical approaches

Journal of applied physics, 2014-02, Vol.115 (5)

2014

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Transport length scales in disordered graphene-based materials: strong localization regimes and dimensionality effects

Physical review letters, 2008-01, Vol.100 (3), p.036803-036803, Article 036803

2008

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Theoretical investigation of the phonon-limited carrier mobility in (001) Si films

Journal of applied physics, 2016-11, Vol.120 (17)

2016

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Carrier mobility in strained Ge nanowires

Journal of applied physics, 2012-10, Vol.112 (8), p.084301-1-4

2012

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Atomistic Boron-Doped Graphene Field-Effect Transistors: A Route toward Unipolar Characteristics

ACS nano, 2012-09, Vol.6 (9), p.7942-7947

2012

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Magnetic-Phase Dependence of the Spin Carrier Mean Free Path in Graphene Nanoribbons

Physical review letters, 2016-06, Vol.116 (23), p.236602-236602, Article 236602

2016

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Electrically driven electron spin resonance mediated by spin–valley–orbit coupling in a silicon quantum dot

npj quantum information, 2018-02, Vol.4 (1), p.1-7, Article 6

2018

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Spin Readout of a CMOS Quantum Dot by Gate Reflectometry and Spin-Dependent Tunneling

PRX quantum, 2021-03, Vol.2 (1), p.010353, Article 010353

2021

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Spin Quintet in a Silicon Double Quantum Dot: Spin Blockade and Relaxation

Physical review. X, 2020-10, Vol.10 (4), p.041010, Article 041010

2020

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All-Electrical Control of a Hybrid Electron Spin/Valley Quantum Bit in SOI CMOS Technology

IEEE transactions on electron devices, 2018-11, Vol.65 (11), p.5151-5156

2018

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Drift velocity versus electric field in ⟨110⟩ Si nanowires: Strong confinement effects

Applied physics letters, 2015-08, Vol.107 (6)

2015

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Anisotropic transport properties of quasiballistic InAs nanowires under high magnetic field

Physical review. B, 2018-03, Vol.97 (12), Article 125308

2018

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Modeling of the Bandgap Distribution in Bi-Axially Strained Germanium Crossbeam for Laser Applications

IEEE photonics journal, 2022-02, Vol.14 (1), p.1-4

2022

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All-electrical manipulation of silicon spin qubits with tunable spin-valley mixing

Physical review. B, 2018-04, Vol.97 (15), Article 155433

2018

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Electrical manipulation of semiconductor spin qubits within the g -matrix formalism

Physical review. B, 2018-10, Vol.98 (15), p.155319, Article 155319

2018

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Improving the tight-binding description of spin-orbit interaction in a Si/Ge heterostructure for qubits applications

2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2023, p.345-348

2023

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Hole mobility in Ge/Si core/shell nanowires: What could be the optimum?

Applied physics letters, 2014-12, Vol.105 (23)

2014

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Impurity-limited mobility and variability in gate-all-around silicon nanowires

Applied physics letters, 2012-04, Vol.100 (15), p.153119-153119-4

2012

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Highly defective graphene： A key prototype of two- dimensional Anderson insulators

Nano research, 2013-05, Vol.6 (5), p.326-334

2013

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Simple model for electrical hole spin manipulation in semiconductor quantum dots: Impact of dot material and orientation

Effects of Strain on the Carrier Mobility in Silicon Nanowires

Charge transport in chemically doped 2D graphene

Transport properties of graphene containing structural defects

Few-Electron Edge-State Quantum Dots in a Silicon Nanowire Field-Effect Transistor

Gate reflectometry in dense quantum dot arrays

Quantum calculations of the carrier mobility: Methodology, Matthiessen's rule, and comparison with semi-classical approaches

Transport length scales in disordered graphene-based materials: strong localization regimes and dimensionality effects

Theoretical investigation of the phonon-limited carrier mobility in (001) Si films

Carrier mobility in strained Ge nanowires

Atomistic Boron-Doped Graphene Field-Effect Transistors: A Route toward Unipolar Characteristics

Magnetic-Phase Dependence of the Spin Carrier Mean Free Path in Graphene Nanoribbons

Electrically driven electron spin resonance mediated by spin–valley–orbit coupling in a silicon quantum dot

Spin Readout of a CMOS Quantum Dot by Gate Reflectometry and Spin-Dependent Tunneling

Spin Quintet in a Silicon Double Quantum Dot: Spin Blockade and Relaxation

All-Electrical Control of a Hybrid Electron Spin/Valley Quantum Bit in SOI CMOS Technology

Drift velocity versus electric field in ⟨110⟩ Si nanowires: Strong confinement effects

Anisotropic transport properties of quasiballistic InAs nanowires under high magnetic field

Modeling of the Bandgap Distribution in Bi-Axially Strained Germanium Crossbeam for Laser Applications

All-electrical manipulation of silicon spin qubits with tunable spin-valley mixing

Electrical manipulation of semiconductor spin qubits within the g -matrix formalism

Improving the tight-binding description of spin-orbit interaction in a Si/Ge heterostructure for qubits applications

Hole mobility in Ge/Si core/shell nanowires: What could be the optimum?

Impurity-limited mobility and variability in gate-all-around silicon nanowires

Highly defective graphene： A key prototype of two- dimensional Anderson insulators

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