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Demonstration of Symmetric Lateral NPN Transistors on SOI Featuring Epitaxially Grown Emitter/Collector Regions

IEEE journal of the Electron Devices Society, 2018-01, Vol.6, p.537-542

2018

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A Perspective on SOI Symmetric Lateral Bipolar Transistors for Ultra-Low-Power Systems

IEEE journal of the Electron Devices Society, 2016-09, Vol.4 (5), p.227-235

Ning, Tak H.

2016

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Substrate-Voltage Modulation of Currents in Symmetric SOI Lateral Bipolar Transistors

IEEE transactions on electron devices, 2016-05, Vol.63 (5), p.1835-1839

2016

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A Perspective on Symmetric Lateral Bipolar Transistors on SOI as a Complementary Bipolar Logic Technology

IEEE journal of the Electron Devices Society, 2015-01, Vol.3 (1), p.24-36

2015

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On the Performance and Scaling of Symmetric Lateral Bipolar Transistors on SOI

IEEE journal of the Electron Devices Society, 2013-01, Vol.1 (1), p.21-27

2013

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On the Device Design and Drive-Current Capability of SOI Lateral Bipolar Transistors

IEEE journal of the Electron Devices Society, 2014-09, Vol.2 (5), p.105-113

2014

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Hot-carrier charge trapping and trap generation in HfO2 and Al2O3 field-effect transistors

Journal of applied physics, 2003-08, Vol.94 (3), p.1728-1737

2003

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On the Shockley Diode Equation and Analytic Models for Modern Bipolar Transistors

75th Anniversary of the Transistor, 2023

1, 2023

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Why BiCMOS and SOI BiCMOS?

IBM journal of research and development, 2002-03, Vol.46 (2.3), p.181-186

Ning, T. H.

2002

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Development of Modern Bipolar Transistors: A Personal Journey and Perspective

IEEE electron devices magazine (Print), 2023-06, Vol.1 (1), p.33-40

Ning, Tak H.

2023

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On Shockley's 1952 Proceedings Of The IRE Paper

Proceedings of the IEEE, 1997-12, Vol.85 (12), p.2052-2054

Tak H. Ning

1997

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Trends in CMOS technology and application development

Materials chemistry and physics, 1997-10, Vol.50 (3), p.261-265

Ning, Tak H

1997

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The Future of CMOS -- Limits and Opportunities

ECS transactions, 2007, Vol.6 (1), p.3-11

Ning, Tak H.

2007

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A perspective on the theory of MOSFET scaling and its impact

IEEE Solid-State Circuits Society Newsletter, 2007, Vol.12 (1), p.27-30

Ning, Tak H.

2007

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Electron trapping in SiO2 due to electron-beam deposition of aluminum

Journal of applied physics, 1978-07, Vol.49 (7), p.4077-4082

Ning, Tak H.

1978

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Leakage Engineering Enabling PDSOI Ring Oscillators Operating in Sub-100pA/µm I off Regime

ECS transactions, 2011-03, Vol.34 (1), p.31-36

2011

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Polysilicon-emitter SiGe-base bipolar transistors-what happens when Ge gets into the emitter?

IEEE transactions on electron devices, 2003-05, Vol.50 (5), p.1346-1352

Ning, T.H.

2003

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Proton radiation effects in vertical SiGe HBTs fabricated on CMOS-compatible SOI

IEEE transactions on nuclear science, 2005-12, Vol.52 (6), p.2353-2357

2005

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Sub-300-ps CBL circuits

IEEE electron device letters, 1989-11, Vol.10 (11), p.484-486

1989

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A perspective on future nanoelectronic devices

2013 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), 2013, p.1-2

Ning, T. H.

2013

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Directions for silicon technology as we approach the end of CMOS scaling

2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, 2010, p.3-3

Ning, Tak H

2010

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Will SOI have a life for the low-power market?

2008 IEEE International SOI Conference, 2008, p.15-16

2008

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Silicon VLSI Technology Trends

Thirteenth IEEE/CHMT International Electronics Manufacturing Technology Symposium, 1992, p.336-338

Tak H. Ning

1992

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First demonstration of symmetric lateral NPN transistors on SOI featuring epitaxially-grown emitter/collector regions

2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2017, p.1-2

2017

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0.1μm Technology and Beol

MRS proceedings, 1996, Vol.427, Article 17

Ning, Tak H.

1996

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Demonstration of Symmetric Lateral NPN Transistors on SOI Featuring Epitaxially Grown Emitter/Collector Regions

A Perspective on SOI Symmetric Lateral Bipolar Transistors for Ultra-Low-Power Systems

Substrate-Voltage Modulation of Currents in Symmetric SOI Lateral Bipolar Transistors

A Perspective on Symmetric Lateral Bipolar Transistors on SOI as a Complementary Bipolar Logic Technology

On the Performance and Scaling of Symmetric Lateral Bipolar Transistors on SOI

On the Device Design and Drive-Current Capability of SOI Lateral Bipolar Transistors

Hot-carrier charge trapping and trap generation in HfO2 and Al2O3 field-effect transistors

On the Shockley Diode Equation and Analytic Models for Modern Bipolar Transistors

Why BiCMOS and SOI BiCMOS?

Development of Modern Bipolar Transistors: A Personal Journey and Perspective

On Shockley's 1952 Proceedings Of The IRE Paper

Trends in CMOS technology and application development

The Future of CMOS -- Limits and Opportunities

A perspective on the theory of MOSFET scaling and its impact

Electron trapping in SiO2 due to electron-beam deposition of aluminum

Leakage Engineering Enabling PDSOI Ring Oscillators Operating in Sub-100pA/µm I off Regime

Polysilicon-emitter SiGe-base bipolar transistors-what happens when Ge gets into the emitter?

Proton radiation effects in vertical SiGe HBTs fabricated on CMOS-compatible SOI

Sub-300-ps CBL circuits

A perspective on future nanoelectronic devices

Directions for silicon technology as we approach the end of CMOS scaling

Will SOI have a life for the low-power market?

Silicon VLSI Technology Trends

First demonstration of symmetric lateral NPN transistors on SOI featuring epitaxially-grown emitter/collector regions

0.1μm Technology and Beol

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