UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Hall Effect Characterization of α‐Irradiated p‐Type 4H‐SiC

physica status solidi (b), 2021-03, Vol.258 (3), p.n/a

2021

Volltextzugriff (PDF)

Ultradeep electron cyclotron resonance plasma etching of GaN

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2017-11, Vol.35 (6)

2017

Volltextzugriff (PDF)

Experimental determination of gamma-ray discrimination in pillar-structured thermal neutron detectors under high gamma-ray flux

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 2015-11, Vol.799 (C), p.203-206

2015

Volltextzugriff (PDF)

Design considerations for three-dimensional betavoltaics

AIP advances, 2019-06, Vol.9 (6), p.065208-065208-10

2019

Volltextzugriff (PDF)

Sintered Cr/Pt and Ni/Au ohmic contacts to B12P2

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2015-05, Vol.33 (3)

2015

Volltextzugriff (PDF)

Numerical Simulations of Pillar Structured Solid State Thermal Neutron Detector: Efficiency and Gamma Discrimination

IEEE transactions on nuclear science, 2009-10, Vol.56 (5), p.2802-2807

2009

Volltextzugriff (PDF)

Photogalvanic Etching of n-GaN for Three-Dimensional Electronics

Journal of electronic materials, 2019-05, Vol.48 (5), p.3345-3350

2019

Volltextzugriff (PDF)

Demonstration of a Three-Dimensionally Structured Betavoltaic

Journal of electronic materials, 2021-03, Vol.50 (3), p.1380-1385

2021

Volltextzugriff (PDF)

Radiation Hardness of Si Compared to 4H-SiC for Betavoltaics Assessed by Accelerated Aging Using an Electron Beam System

Journal of electronic materials, 2022, Vol.51 (1), p.350-355

2022

Volltextzugriff (PDF)

Hall Effect Characterization of α ‐Irradiated p‐Type 4H‐SiC

Physica Status Solidi B. Basic Solid State Physics, 2020-11, Vol.258 (3)

2020

Volltextzugriff (PDF)

Electrical and optical gain lever effects in InGaAs double quantum-well diode lasers

IEEE journal of quantum electronics, 2007-10, Vol.43 (10), p.860-868

2007

Volltextzugriff (PDF)

Fabrication of Pillar-structured thermal neutron detectors

2007 IEEE Nuclear Science Symposium Conference Record, 2007, Vol.2, p.1577-1580

2007

Volltextzugriff (PDF)

Smooth Bosch Etch for Improved Si Diodes

IEEE electron device letters, 2013-10, Vol.34 (10), p.1226-1228

2013

Volltextzugriff (PDF)

Ultrahigh GaN:SiO2 etch selectivity by in situ surface modification of SiO2 in a Cl2-Ar plasma

Materials research letters, 2021-02, Vol.9 (2), p.105-111

2021

Volltextzugriff (PDF)

Sintered Cr/Pt and Ni/Au ohmic contacts to B{sub 12}P{sub 2}

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2015-05, Vol.33 (3)

2015

Volltextzugriff (PDF)

Exploration of GaTe for gamma detection

2007 IEEE Nuclear Science Symposium Conference Record, 2007, Vol.2, p.1551-1555

2007

Volltextzugriff (PDF)

Radiation Hardness of Si Compared to 4H-SiC for Betavoltaics Assessed by Accelerated Aging Using an Electron Beam System

Journal of electronic materials, 2021-11, Vol.51

2021

Volltextzugriff (PDF)

Pillar-structured neutron detector based multiplicity system

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 2018-01, Vol.877, p.355-358