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Influence of Ba/Ti Ratio on the Positive Temperature Coefficient of Resistivity Characteristics of Ca-Doped Semiconducting BaTiO3 Fired in Reducing Atmosphere and Reoxidized in Air

Journal of the American Ceramic Society, 2007-06, Vol.90 (6), p.1817-1821

2007

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Degradation of potential barriers in ZnO-based chip varistors due to electrostatic discharge

Journal of applied physics, 2012-08, Vol.112 (3)

2012

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Influence of distribution of additives on electrical potential barrier at grain boundaries in ZnO-based multilayered chip varistor

Journal of applied physics, 2006-10, Vol.100 (8)

2006

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Resistance switching and retention behaviors in polycrystalline La-doped SrTiO3 ceramics chip devices

Journal of applied physics, 2008-09, Vol.104 (5)

2008

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Effect of Sn2+ Ion Substitution on Dielectric Properties of (Ba,Ca)TiO3 Ferroelectric Ceramics

Jpn J Appl Phys, 2010-09, Vol.49 (9), p.09MC04-09MC04-5

2010

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Impact of the Electrical Forming Process on the Resistance Switching Behaviors in Lanthanum-Doped Strontium Titanate Ceramic Chip Devices

Japanese Journal of Applied Physics, 2013-04, Vol.52 (4), p.045802-045802-8

2013

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Fabrication and Characterization of Colossal Electroresistance Chip Devices Composed of Polycrystalline Lanthanum-Doped Strontium Titanate and Palladium Electrodes

Journal of the American Ceramic Society, 2008-02, Vol.91 (2), p.478-484

2008

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Vibration suppression of the rotor system using both a ball balancer and axial control of the repulsive magnetic bearing

Journal of vibration and control, 2012-04, Vol.18 (4), p.484-498

2012

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Resistance switching effect in Nb-doped SrTiO3 (100) bicrystal with (100) ∼45° twist boundary

Journal of applied physics, 2009-08, Vol.106 (4)

2009

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Effect of local electrical properties on the electrostatic discharge withstand capability of multilayered chip ZnO varistors

Journal of applied physics, 2008-07, Vol.104 (1), p.013701-013701-12

2008

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Resistance switching effect in Nb-doped SrTiO 3 (100) bicrystal with (100) ∼ 45 ° twist boundary

Journal of applied physics, 2009-08, Vol.106 (4), p.043714-043714-6

2009

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Resistance switching and retention behaviors in polycrystalline La-doped SrTiO 3 ceramics chip devices

Journal of applied physics, 2008-09, Vol.104 (5), p.053712-053712-12

2008

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Influence of distribution of additives on electrical potential barrierat grain boundaries in ZnO-based multilayered chip varistor

Journal of applied physics, 2006-10, Vol.100 (8), p.083706-083706-7

2006

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Influence of Ba/Ti Ratio on the Positive Temperature Coefficient of Resistivity Characteristics of Ca‐Doped Semiconducting BaTiO 3 Fired in Reducing Atmosphere and Reoxidized in Air

Journal of the American Ceramic Society, 2007-06, Vol.90 (6), p.1817-1821

2007

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Influence of BaTi Ratio on the Positive Temperature Coefficient of Resistivity Characteristics of Ca-Doped Semiconducting BaTiO sub(3) Fired in Reducing Atmosphere and Reoxidized in Air

Journal of the American Ceramic Society, 2007-06, Vol.90 (6), p.1817-1821

2007

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Effect of Sn 2+ Ion Substitution on Dielectric Properties of (Ba,Ca)TiO 3 Ferroelectric Ceramics

Japanese Journal of Applied Physics, 2010-09, Vol.49 (9S), p.9

2010

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Preparation of Multilayer Semiconducting BaTiO 3 Ceramics Co-Fired with Ni Inner Electrodes

Japanese Journal of Applied Physics, 2007-10, Vol.46 (10R), p.6715

2007

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Texture Fraction Dependences of High-Power Characteristics for Textured SrBi 2 Nb 2 O 9 Ceramics

Ferroelectrics, 2007-09, Vol.356 (1), p.175-179

2007

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Effects of Ba/Ti Ratio on Positive Temperature Coefficient of Resistivity Characteristics of Donor-doped BaTiO 3 Fired in Reducing Atmosphere

Japanese Journal of Applied Physics, 2007-02, Vol.46 (2R), p.675

2007

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Texture Fraction Dependences of High-Power Characteristics for Textured SrBi2Nb2O9 Ceramics

Ferroelectrics, 2007-01, Vol.356 (1), p.175-179

2007

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High-Power Piezoelectric Vibration Characteristics of Textured SrBi 2 Nb 2 O 9 Ceramics

Japanese Journal of Applied Physics, 2006-09, Vol.45 (9S), p.7455

2006

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Differences between Interfacial Bonding Chemistry at SiC-SiO2 Interfaces Prepared by Low-Temperature Remote Plasma-Assisted Oxidation and High Temperature Conventional Thermal Oxidation

Materials science forum, 1998-01, Vol.264-268, p.1021-1024

1998

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Degradation Behavior of PTCR BaTiO3 in Reducing Gases

Journal of the Ceramic Society of Japan, 1996/12/01, Vol.104(1216), pp.1091-1096

1996

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Chapter 2 - 2.1 Semiconductive Ceramics

Handbook of Advanced Ceramics, 2003, p.25-36

2003

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SEMICONDUCTIVE CERAMICS

Handbook of Advanced Ceramics. Vol.2. Processing and their Applications, 2003, p.25-36

2003

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Influence of Ba/Ti Ratio on the Positive Temperature Coefficient of Resistivity Characteristics of Ca-Doped Semiconducting BaTiO3 Fired in Reducing Atmosphere and Reoxidized in Air

Degradation of potential barriers in ZnO-based chip varistors due to electrostatic discharge

Influence of distribution of additives on electrical potential barrier at grain boundaries in ZnO-based multilayered chip varistor

Resistance switching and retention behaviors in polycrystalline La-doped SrTiO3 ceramics chip devices

Effect of Sn2+ Ion Substitution on Dielectric Properties of (Ba,Ca)TiO3 Ferroelectric Ceramics

Impact of the Electrical Forming Process on the Resistance Switching Behaviors in Lanthanum-Doped Strontium Titanate Ceramic Chip Devices

Fabrication and Characterization of Colossal Electroresistance Chip Devices Composed of Polycrystalline Lanthanum-Doped Strontium Titanate and Palladium Electrodes

Vibration suppression of the rotor system using both a ball balancer and axial control of the repulsive magnetic bearing

Resistance switching effect in Nb-doped SrTiO3 (100) bicrystal with (100) ∼45° twist boundary

Effect of local electrical properties on the electrostatic discharge withstand capability of multilayered chip ZnO varistors

Resistance switching effect in Nb-doped SrTiO 3 (100) bicrystal with (100) ∼ 45 ° twist boundary

Resistance switching and retention behaviors in polycrystalline La-doped SrTiO 3 ceramics chip devices

Influence of distribution of additives on electrical potential barrierat grain boundaries in ZnO-based multilayered chip varistor

Influence of Ba/Ti Ratio on the Positive Temperature Coefficient of Resistivity Characteristics of Ca‐Doped Semiconducting BaTiO 3 Fired in Reducing Atmosphere and Reoxidized in Air

Influence of BaTi Ratio on the Positive Temperature Coefficient of Resistivity Characteristics of Ca-Doped Semiconducting BaTiO sub(3) Fired in Reducing Atmosphere and Reoxidized in Air

Effect of Sn 2+ Ion Substitution on Dielectric Properties of (Ba,Ca)TiO 3 Ferroelectric Ceramics

Preparation of Multilayer Semiconducting BaTiO 3 Ceramics Co-Fired with Ni Inner Electrodes

Texture Fraction Dependences of High-Power Characteristics for Textured SrBi 2 Nb 2 O 9 Ceramics

Effects of Ba/Ti Ratio on Positive Temperature Coefficient of Resistivity Characteristics of Donor-doped BaTiO 3 Fired in Reducing Atmosphere

Texture Fraction Dependences of High-Power Characteristics for Textured SrBi2Nb2O9 Ceramics

High-Power Piezoelectric Vibration Characteristics of Textured SrBi 2 Nb 2 O 9 Ceramics

Differences between Interfacial Bonding Chemistry at SiC-SiO2 Interfaces Prepared by Low-Temperature Remote Plasma-Assisted Oxidation and High Temperature Conventional Thermal Oxidation

Degradation Behavior of PTCR BaTiO3 in Reducing Gases

Chapter 2 - 2.1 Semiconductive Ceramics

SEMICONDUCTIVE CERAMICS

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