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Degradation of Crystalline Silicon Due to Boron-Oxygen Defects

IEEE journal of photovoltaics, 2017-01, Vol.7 (1), p.383-398

2017

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Electrical characterization of the slow boron oxygen defect component in Czochralski silicon

Physica status solidi. PSS-RRL. Rapid research letters, 2015-12, Vol.9 (12), p.692-696

2015

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Identification of lifetime limiting defects by temperature- and injection-dependent photoluminescence imaging

Journal of applied physics, 2016-09, Vol.120 (10)

2016

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Kinetics of carrier-induced degradation at elevated temperature in multicrystalline silicon solar cells

Solar energy materials and solar cells, 2017-12, Vol.173, p.80-84

2017

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Thermal activation of hydrogen for defect passivation in poly-Si based passivating contacts

Solar energy materials and solar cells, 2021-09, Vol.230, p.111267, Article 111267

2021

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Understanding the light‐induced degradation at elevated temperatures: Similarities between multicrystalline and floatzone p‐type silicon

Progress in photovoltaics, 2018-08, Vol.26 (8), p.533-542

2018

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Investigation of two-level defects in injection dependent lifetime spectroscopy

Solar energy materials and solar cells, 2020-10, Vol.216, p.110692, Article 110692

2020

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Carrier Lifetime Limitation of Industrial Ga-Doped Cz-Grown Silicon After Different Solar Cell Process Flows

IEEE journal of photovoltaics, 2022-01, Vol.12 (1), p.238-243

2022

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Influence of Dopant Elements on Degradation Phenomena in B‐ and Ga‐Doped Czochralski‐Grown Silicon

Solar RRL, 2021-05, Vol.5 (5), p.n/a

2021

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Silicon‐based passivating contacts: The TOPCon route

Progress in photovoltaics, 2023-04, Vol.31 (4), p.341-359

2023

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Radiative recombination in silicon photovoltaics: Modeling the influence of charge carrier densities and photon recycling

Solar energy materials and solar cells, 2021-09, Vol.230, p.111198, Article 111198

2021

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Temporary Recovery of the Defect Responsible for Light- and Elevated Temperature-Induced Degradation: Insights Into the Physical Mechanisms Behind LeTID

IEEE journal of photovoltaics, 2020-11, Vol.10 (6), p.1591-1603

2020

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Temperature Gradient Image Analysis to Optimize an Ultrafast Regeneration of Boron-Oxygen-Related Defects

IEEE journal of photovoltaics, 2021-05, Vol.11 (3), p.606-612

2021

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Stable chemical enhancement of passivating nanolayer structures grown by atomic layer deposition on silicon

Nanoscale, 2023-06, Vol.15 (25), p.1593-165

2023

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Formation and annihilation of bulk recombination-active defects induced by muon irradiation of crystalline silicon

Journal of applied physics, 2024-08, Vol.136 (5)

2024

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Hierarchical Time-Series Approaches for Photovoltaic System Performance Forecasting With Sparse Datasets

IEEE journal of photovoltaics, 2024-10, p.1-8

2024

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Gallium‐Doped Silicon for High‐Efficiency Commercial Passivated Emitter and Rear Solar Cells

Solar RRL, 2021-04, Vol.5 (4), p.n/a

2021

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Imaging Interstitial Iron Concentrations in Gallium‐Doped Silicon Wafers

Physica status solidi. A, Applications and materials science, 2019-05, Vol.216 (10), p.n/a

2019

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Electron and proton irradiation effect on the minority carrier lifetime in SiC passivated p-doped Ge wafers for space photovoltaics

Solar energy materials and solar cells, 2020-06, Vol.209, p.110430, Article 110430

2020

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Quantifying Surface Recombination-Improvements in Determination and Simulation of the Surface Recombination Parameter J0s

IEEE journal of photovoltaics, 2023-07, Vol.13 (4), p.535-546

2023

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The Impact of Different Hydrogen Configurations on Light- and Elevated-Temperature-Induced Degradation

IEEE journal of photovoltaics, 2023-03, Vol.13 (2), p.1-12

2023

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Investigation of LeTID where we can control it – Application of FZ silicon for defect studies

AIP Conference Proceedings, 2019, Vol.2147 (1)

2019

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Mechanisms of Silicon Surface Passivation by Negatively Charged Hafnium Oxide Thin Films

IEEE journal of photovoltaics, 2023-01, Vol.13 (1), p.40-47

2023

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Extraordinarily High Minority Charge Carrier Lifetime Observed in Crystalline Silicon

Solar RRL, 2021-11, Vol.5 (11), p.n/a

2021

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Long-Term Stability of Aluminum Oxide Based Surface Passivation Schemes Under Illumination at Elevated Temperatures

IEEE journal of photovoltaics, 2017-09, Vol.7 (5), p.1197-1202

2017

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Degradation of Crystalline Silicon Due to Boron-Oxygen Defects

Electrical characterization of the slow boron oxygen defect component in Czochralski silicon

Identification of lifetime limiting defects by temperature- and injection-dependent photoluminescence imaging

Kinetics of carrier-induced degradation at elevated temperature in multicrystalline silicon solar cells

Thermal activation of hydrogen for defect passivation in poly-Si based passivating contacts

Understanding the light‐induced degradation at elevated temperatures: Similarities between multicrystalline and floatzone p‐type silicon

Investigation of two-level defects in injection dependent lifetime spectroscopy

Carrier Lifetime Limitation of Industrial Ga-Doped Cz-Grown Silicon After Different Solar Cell Process Flows

Influence of Dopant Elements on Degradation Phenomena in B‐ and Ga‐Doped Czochralski‐Grown Silicon

Silicon‐based passivating contacts: The TOPCon route

Radiative recombination in silicon photovoltaics: Modeling the influence of charge carrier densities and photon recycling

Temporary Recovery of the Defect Responsible for Light- and Elevated Temperature-Induced Degradation: Insights Into the Physical Mechanisms Behind LeTID

Temperature Gradient Image Analysis to Optimize an Ultrafast Regeneration of Boron-Oxygen-Related Defects

Stable chemical enhancement of passivating nanolayer structures grown by atomic layer deposition on silicon

Formation and annihilation of bulk recombination-active defects induced by muon irradiation of crystalline silicon

Hierarchical Time-Series Approaches for Photovoltaic System Performance Forecasting With Sparse Datasets

Gallium‐Doped Silicon for High‐Efficiency Commercial Passivated Emitter and Rear Solar Cells

Imaging Interstitial Iron Concentrations in Gallium‐Doped Silicon Wafers

Electron and proton irradiation effect on the minority carrier lifetime in SiC passivated p-doped Ge wafers for space photovoltaics

Quantifying Surface Recombination-Improvements in Determination and Simulation of the Surface Recombination Parameter J0s

The Impact of Different Hydrogen Configurations on Light- and Elevated-Temperature-Induced Degradation

Investigation of LeTID where we can control it – Application of FZ silicon for defect studies

Mechanisms of Silicon Surface Passivation by Negatively Charged Hafnium Oxide Thin Films

Extraordinarily High Minority Charge Carrier Lifetime Observed in Crystalline Silicon

Long-Term Stability of Aluminum Oxide Based Surface Passivation Schemes Under Illumination at Elevated Temperatures

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