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Nonalloyed and In Situ Ohmic Contacts to Highly Doped n-Type GaAs Layers Grown by Molecular Beam Epitaxy (MBE) for Field-Effect Transistors

Journal of applied physics, 1979-02, Vol.50 (2), p.951-954

1979

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Low-noise and high-power GaAs microwave field-effect transistors prepared by molecular beam epitaxy

Journal of applied physics, 1977-01, Vol.48 (1), p.346-349

1977

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10-W and 12-W GaAs IMPATT's

IEEE transactions on electron devices, 1975-04, Vol.22 (4), p.200-200

1975

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Performance of GaAs power m.e.s.f.e.t.s

Electronics letters, 1978-03, Vol.14 (6), p.175

1978

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Control of gate-Drain avalanche in GaAs MESFET's

IEEE transactions on electron devices, 1980-06, Vol.27 (6), p.1013-1018

1980

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Instability of Non-Zonal Baroclinic Flows

Journal of the atmospheric sciences, 1980-07, Vol.37 (7), p.1447-1463

Niehaus, Margaret C. W.

1980

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Instability of Non-Zonal Baroclinic Flows: Multiple-Scale Analysis

Journal of the atmospheric sciences, 1981-05, Vol.38 (5), p.974-987

Niehaus, Margaret C. W.

1981

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WA-B5 nonalloyed and "In situ" ohmic contacts to highly doped n-type GaAs layers grown by molecular beam epitaxy (MBE) for field-effect transistors

IEEE transactions on electron devices, 1978-11, Vol.25 (11), p.1356-1356

1978

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Gallium arsenide beam lead hall-effect detectors for magnetic bubble detection

IEEE transactions on magnetics, 1971-09, Vol.7 (3), p.369-369

Niehaus, W.

1971

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Reliability of power GaAs field-effect transistors

IEEE transactions on electron devices, 1982-03, Vol.29 (3), p.395-401

1982

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A self-limiting anodic etch-to-voltage (AETV) technique for fabrication of modified read-impatts

Solid-state electronics, 1976-01, Vol.19 (3), p.175-180

1976

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Double drift silicon diodes at X-band

IEEE transactions on electron devices, 1973-12, Vol.20 (12), p.1178-1178

1973

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Double-drift IMPATT diodes near 100 GHz

IEEE transactions on electron devices, 1973-09, Vol.20 (9), p.765-771

1973

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Double-drift Silicon IMPATT's at X band

IEEE transactions on electron devices, 1974-08, Vol.21 (8), p.523-531

1974

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Surface-barrier analysis for niobium and tantalum and tantalum-on-niobium from periodic deviations in the thermionic Schottky effect

Surface science, 1971-01, Vol.27 (2), p.256-266

1971

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Nonalloyed and i n s i t u Ohmic contacts to highly doped n -type GaAs layers grown by molecular beam epitaxy (MBE) for field-effect transistors

Journal of applied physics, 1979-02, Vol.50 (2), p.951-954

1979

Volltextzugriff (PDF)

Control of gate - Drain avalanche in GaAs MESFET' s

IEEE transactions on electron devices, 1980-06, Vol.27 (6), p.1013-1018

1980

Volltextzugriff (PDF)

DFTB+, a software package for efficient approximate density functional theory based atomistic simulations

The Journal of chemical physics, 2020-03, Vol.152 (12), p.124101-124101

2020

Volltextzugriff (PDF)

I-2 Theoretical and experimental study of GaAs modified Read IMPATT's

IEEE transactions on electron devices, 1974-11, Vol.21 (11), p.736-736

1974

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Beam-Lead plated heat sink GaAs IMPATT: Part I-Performance

IEEE transactions on electron devices, 1975-08, Vol.22 (8), p.509-514

1975

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Beam-lead plated heat sink GaAs IMPATT. I - Performance

IEEE transactions on electron devices, 1975-08, Vol.ED-22, p.509-514

1975

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Instability of nonzonal baroclinic flows: multiple-scale analysis

Journal of the atmospheric sciences, 1981-01, Vol.38 (5), p.974-987

Niehaus, Margaret CW

1981

Volltextzugriff (PDF)

Instability of nonzonal baroclinic flows

Journal of the atmospheric sciences, 1980-01, Vol.37 (7), p.1447-1463

Niehaus, Margaret CW

1980

Volltextzugriff (PDF)

Predicting the physiological performance of ectotherms in fluctuating thermal environments

Journal of experimental biology, 2012-02, Vol.215 (Pt 4), p.694-701

2012

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Nonalloyed and In Situ Ohmic Contacts to Highly Doped n-Type GaAs Layers Grown by Molecular Beam Epitaxy (MBE) for Field-Effect Transistors

Low-noise and high-power GaAs microwave field-effect transistors prepared by molecular beam epitaxy

10-W and 12-W GaAs IMPATT's

Performance of GaAs power m.e.s.f.e.t.s

Control of gate-Drain avalanche in GaAs MESFET's

Instability of Non-Zonal Baroclinic Flows

Instability of Non-Zonal Baroclinic Flows: Multiple-Scale Analysis

WA-B5 nonalloyed and "In situ" ohmic contacts to highly doped n-type GaAs layers grown by molecular beam epitaxy (MBE) for field-effect transistors

Gallium arsenide beam lead hall-effect detectors for magnetic bubble detection

Reliability of power GaAs field-effect transistors

A self-limiting anodic etch-to-voltage (AETV) technique for fabrication of modified read-impatts

Double drift silicon diodes at X-band

Double-drift IMPATT diodes near 100 GHz

Double-drift Silicon IMPATT's at X band

Surface-barrier analysis for niobium and tantalum and tantalum-on-niobium from periodic deviations in the thermionic Schottky effect

Nonalloyed and i n s i t u Ohmic contacts to highly doped n -type GaAs layers grown by molecular beam epitaxy (MBE) for field-effect transistors

Control of gate - Drain avalanche in GaAs MESFET' s

DFTB+, a software package for efficient approximate density functional theory based atomistic simulations

I-2 Theoretical and experimental study of GaAs modified Read IMPATT's

Beam-Lead plated heat sink GaAs IMPATT: Part I-Performance

Beam-lead plated heat sink GaAs IMPATT. I - Performance

Instability of nonzonal baroclinic flows: multiple-scale analysis

Instability of nonzonal baroclinic flows

Whole-genome sequencing for prediction of Mycobacterium tuberculosis drug susceptibility and resistance: a retrospective cohort study

Predicting the physiological performance of ectotherms in fluctuating thermal environments

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