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Microstructure of epitaxial YBa2Cu3O7-x thin films

Applied physics letters, 1990-05, Vol.56 (21), p.2138-2140

1990

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Maximum thickness of amorphous NiZr interlayers formed by a solid-state reaction technique

Applied physics letters, 1987-11, Vol.51 (21), p.1693-1695

1987

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Electron tunneling time measured by photoluminescence excitation correlation spectroscopy

Applied physics letters, 1989-02, Vol.54 (6), p.552-554

1989

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Infrared response from metallic particles embedded in a single-crystal Si matrix - The layered internal photoemission sensor

Applied physics letters, 1990-10, Vol.57 (14), p.1419-1421

1990

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Nucleation and growth of YBaCuO on SrTiO3

Applied physics letters, 1988-11, Vol.53 (19), p.1871-1873

1988

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Observation of negative differential resistance from a single barrier heterostructure

Applied physics letters, 1988-01, Vol.52 (1), p.54-56

1988

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Effects of backsputtering and amorphous silicon capping layer on the formation of TiSi2 in sputtered Ti films on (001)Si by rapid thermal annealing

Journal of applied physics, 1988-04, Vol.63 (8), p.2778-2782

1988

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Growth of single-crystal columns of CoSi2 embedded in epitaxial Si on Si(111) by molecular beam epitaxy

Applied physics letters, 1989-07, Vol.55 (3), p.247-249

1989

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Amorphous Ta–Si–N thin-film alloys as diffusion barrier in Al/Si metallizations

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 1990-05, Vol.8 (3), p.3006-3010

1990

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Compositional modulation in AlxGa1-xAs epilayers grown by molecular beam epitaxy on the (111)facets of grooves in a nonplanar substrate

Applied physics letters, 1989-07, Vol.55 (1), p.53-55

1989

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Formation of epitaxial NiSi2 of single orientation on (111) Si inside miniature size oxide openings

Applied physics letters, 1987-02, Vol.50 (5), p.259-261

1987

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Growth of InAs/Ga1-xInxSb infrared superlattices

Journal of crystal growth, 1991-05, Vol.111 (1-4), p.683-687

1991

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Molecular beam epitaxial growth of CoSi2 on porous Si

Applied physics letters, 1987-11, Vol.51 (22), p.1809-1811

1987

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Growth and characterization of molecular beam epitaxial GaAs layers on porous silicon

Applied physics letters, 1987-09, Vol.51 (11), p.814-816

1987

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Columnar epitaxy of PtSi on Si (111)

Applied physics letters, 1990-08, Vol.57 (7), p.686-688

1990

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Cross-sectional transmission electron microscope study of residual defects in BF2+-implanted (001)Si

Journal of applied physics, 1986-11, Vol.60 (9), p.3114-3119

1986

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Fabrication and characterization of high-Tc superconducting X-band resonators and bandpass filters

IEEE transactions on magnetics, 1991-03, Vol.27 (2), p.2553-2556

1991

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Formation of bubbles in BF2+-implanted silicon

Applied physics letters, 1986-06, Vol.48 (22), p.1528-1530

1986

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Columnar growth of CoSi2 on Si(111), Si(100) and Si(110) by molecular beam epitaxy

Thin solid films, 1990-01, Vol.184 (1-2), p.335-342

1990

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Indium oxide diffusion barriers for Al/Si metallizations

Applied physics letters, 1988-12, Vol.53 (26), p.2644-2646

1988

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Epitaxial growth of NiSi2 on ion-implanted silicon at 250―280 °C

Applied physics letters, 1986-12, Vol.49 (26), p.1770-1772

1986

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Cross-sectional transmission electron microscope study of residual defects in BF+2 implanted (111) Si

Journal of applied physics, 1987-12, Vol.62 (11), p.4421-4425

1987

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Stable solid-phase contact to n-GaAs

IEEE transactions on electron devices, 1989-06, Vol.36 (6), p.1223-1225

1989

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Nanometer thick single crystal Y2O3 films epitaxially grown on Si (111) with structures approaching perfection

Applied physics letters, 2008-02, Vol.92 (6)

2008

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Dependence of critical thickness on growth temperature in GexSi1-x/Si superlattices

Applied physics letters, 1988-03, Vol.52 (11), p.916-918

1988

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Microstructure of epitaxial YBa2Cu3O7-x thin films

Maximum thickness of amorphous NiZr interlayers formed by a solid-state reaction technique

Electron tunneling time measured by photoluminescence excitation correlation spectroscopy

Infrared response from metallic particles embedded in a single-crystal Si matrix - The layered internal photoemission sensor

Nucleation and growth of YBaCuO on SrTiO3

Observation of negative differential resistance from a single barrier heterostructure

Effects of backsputtering and amorphous silicon capping layer on the formation of TiSi2 in sputtered Ti films on (001)Si by rapid thermal annealing

Growth of single-crystal columns of CoSi2 embedded in epitaxial Si on Si(111) by molecular beam epitaxy

Amorphous Ta–Si–N thin-film alloys as diffusion barrier in Al/Si metallizations

Compositional modulation in AlxGa1-xAs epilayers grown by molecular beam epitaxy on the (111)facets of grooves in a nonplanar substrate

Formation of epitaxial NiSi2 of single orientation on (111) Si inside miniature size oxide openings

Growth of InAs/Ga1-xInxSb infrared superlattices

Molecular beam epitaxial growth of CoSi2 on porous Si

Growth and characterization of molecular beam epitaxial GaAs layers on porous silicon

Columnar epitaxy of PtSi on Si (111)

Cross-sectional transmission electron microscope study of residual defects in BF2+-implanted (001)Si

Fabrication and characterization of high-Tc superconducting X-band resonators and bandpass filters

Formation of bubbles in BF2+-implanted silicon

Columnar growth of CoSi2 on Si(111), Si(100) and Si(110) by molecular beam epitaxy

Indium oxide diffusion barriers for Al/Si metallizations

Epitaxial growth of NiSi2 on ion-implanted silicon at 250―280 °C

Cross-sectional transmission electron microscope study of residual defects in BF+2 implanted (111) Si

Stable solid-phase contact to n-GaAs

Nanometer thick single crystal Y2O3 films epitaxially grown on Si (111) with structures approaching perfection

Dependence of critical thickness on growth temperature in GexSi1-x/Si superlattices

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