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Omega-Gated Silicon and Strained Silicon Nanowire Array Tunneling FETs

IEEE electron device letters, 2012-11, Vol.33 (11), p.1535-1537

2012

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Strained silicon based complementary tunnel-FETs: Steep slope switches for energy efficient electronics

Solid-state electronics, 2014-08, Vol.98, p.32-37

2014

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Effective attenuation length for lanthanum lutetium oxide between 7 and 13 keV

Applied physics letters, 2013-01, Vol.102 (3)

2013

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Strained Si and SiGe tunnel-FETs and complementary tunnel-FET inverters with minimum gate lengths of 50 nm

Solid-state electronics, 2014-07, Vol.97, p.76-81

2014

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Integration of LaLuO3 (κ ~ 30) as High-κ, Dielectric on Strained and Unstrained SOI MOSFETs With a Replacement Gate Process

IEEE electron device letters, 2011, Vol.32 (1), p.15-17

2011

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Reduction of silicon dioxide interfacial layer to 4.6 A EOT by Al remote scavenging in high- Kappa /metal gate stacks on Si

Microelectronic engineering, 2013-09, Vol.109, p.109-112

2013

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Photoemission spectroscopy study of the lanthanum lutetium oxide/silicon interface

The Journal of chemical physics, 2013-04, Vol.138 (15), p.154709-154709

2013

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High mobility compressive strained Si0.5Ge0.5 quantum well p-MOSFETs with higher-k/metal-gate

Solid-state electronics, 2011-08, Vol.62 (1), p.185-188

2011

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Rare-earth oxide/TiN gate stacks on high mobility strained silicon on insulator for fully depleted metal-oxide-semiconductor field-effect transistors

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2011-01, Vol.29 (1)

2011

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LaLuO3 higher-κ dielectric integration in SOI MOSFETs with a gate-first process

Solid-state electronics, 2012-05, Vol.71, p.19-24

2012

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LaScO3 as a higher-κ dielectric for p-MOSFETs

Microelectronic engineering, 2011-07, Vol.88 (7), p.1323-1325

2011

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Strained Si and SiGe tunnel-FETs and complementary tunnel-FET inverters with minimum gate lengths of 50nm

Solid-state electronics, 2014-07, Vol.97, p.76-81

2014

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Reduction of silicon dioxide interfacial layer to 4.6 AA EOT by Al remote scavenging in high- Kappa /metal gate stacks on Si

Microelectronic engineering, 2013-09, Vol.109, p.109-112

2013

Volltextzugriff (PDF)

Reduction of silicon dioxide interfacial layer to 4.6Å EOT by Al remote scavenging in high-κ/metal gate stacks on Si

Microelectronic engineering, 2013-09, Vol.109, p.109-112

2013

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Reduction of silicon dioxide interfacial layer to 4.6 Å EOT by Al remote scavenging in high-κ/metal gate stacks on Si: Insulating Films on Semiconductors 2013

Microelectronic engineering, 2013, Vol.109, p.109-112

2013

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Integration of \hbox \ (\kappa \sim \hbox) as High- \kappa Dielectric on Strained and Unstrained SOI MOSFETs With a Replacement Gate Process

IEEE electron device letters, 2011-01, Vol.32 (1), p.15-17

2011

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Integration of [Formula Omitted] as High-[Formula Omitted] Dielectric on Strained and Unstrained SOI MOSFETs With a Replacement Gate Process

IEEE electron device letters, 2011-01, Vol.32 (1), p.15

2011

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Integration of hbox LaLuO 3 Unknown character ( Kappa similar to hbox 30 ) as High- Kappa Dielectric on Strained and Unstrained SOI MOSFETs With a Replacement Gate Process

IEEE electron device letters, 2011-01, Vol.32 (1), p.15-17

2011

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Demonstration of improved transient response of inverters with steep slope strained Si NW TFETs by reduction of TAT with pulsed I-V and NW scaling

2013 IEEE International Electron Devices Meeting, 2013, p.4.4.1-4.4.4

2013

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LaScO sub(3 as a higher-[kappa] dielectric for p-MOSFETs)

Microelectronic engineering, 2011-07, Vol.88 (7), p.1323-1325

2011

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LaScO 3 as a higher- κ dielectric for p-MOSFETs

Microelectronic engineering, 2011, Vol.88 (7), p.1323-1325

2011

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High mobility compressive strained Si 0.5Ge 0.5 quantum well p-MOSFETs with higher- k/metal-gate

Solid-state electronics, 2011, Vol.62 (1), p.185-188

2011

Volltextzugriff (PDF)

High mobility compressive strained Si sub(0.5)Ge sub(0.5) quantum well p-MOSFETs with higher-k/metal-gate

Solid-state electronics, 2011-08, Vol.62 (1), p.185-188

2011

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Electrical and Structural Properties of Ternary Rare-Earth Oxides on Si and Higher Mobility Substrates and their Integration as High-k Gate Dielectrics in MOSFET Devices

ECS transactions, 2011, Vol.35 (4), p.461-479

2011

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MOSFETs with high mobility channel materials and higher-k/metal gate stack

2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, 2010, p.875-878

2010

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Omega-Gated Silicon and Strained Silicon Nanowire Array Tunneling FETs

Strained silicon based complementary tunnel-FETs: Steep slope switches for energy efficient electronics

Effective attenuation length for lanthanum lutetium oxide between 7 and 13 keV

Strained Si and SiGe tunnel-FETs and complementary tunnel-FET inverters with minimum gate lengths of 50 nm

Integration of LaLuO3 (κ ~ 30) as High-κ, Dielectric on Strained and Unstrained SOI MOSFETs With a Replacement Gate Process

Reduction of silicon dioxide interfacial layer to 4.6 A EOT by Al remote scavenging in high- Kappa /metal gate stacks on Si

Photoemission spectroscopy study of the lanthanum lutetium oxide/silicon interface

High mobility compressive strained Si0.5Ge0.5 quantum well p-MOSFETs with higher-k/metal-gate

Rare-earth oxide/TiN gate stacks on high mobility strained silicon on insulator for fully depleted metal-oxide-semiconductor field-effect transistors

LaLuO3 higher-κ dielectric integration in SOI MOSFETs with a gate-first process

LaScO3 as a higher-κ dielectric for p-MOSFETs

Strained Si and SiGe tunnel-FETs and complementary tunnel-FET inverters with minimum gate lengths of 50nm

Reduction of silicon dioxide interfacial layer to 4.6 AA EOT by Al remote scavenging in high- Kappa /metal gate stacks on Si

Reduction of silicon dioxide interfacial layer to 4.6Å EOT by Al remote scavenging in high-κ/metal gate stacks on Si

Reduction of silicon dioxide interfacial layer to 4.6 Å EOT by Al remote scavenging in high-κ/metal gate stacks on Si: Insulating Films on Semiconductors 2013

Integration of \hbox \ (\kappa \sim \hbox) as High- \kappa Dielectric on Strained and Unstrained SOI MOSFETs With a Replacement Gate Process

Integration of [Formula Omitted] as High-[Formula Omitted] Dielectric on Strained and Unstrained SOI MOSFETs With a Replacement Gate Process

Integration of hbox LaLuO 3 Unknown character ( Kappa similar to hbox 30 ) as High- Kappa Dielectric on Strained and Unstrained SOI MOSFETs With a Replacement Gate Process

Demonstration of improved transient response of inverters with steep slope strained Si NW TFETs by reduction of TAT with pulsed I-V and NW scaling

LaScO sub(3 as a higher-[kappa] dielectric for p-MOSFETs)

LaScO 3 as a higher- κ dielectric for p-MOSFETs

High mobility compressive strained Si 0.5Ge 0.5 quantum well p-MOSFETs with higher- k/metal-gate

High mobility compressive strained Si sub(0.5)Ge sub(0.5) quantum well p-MOSFETs with higher-k/metal-gate

Electrical and Structural Properties of Ternary Rare-Earth Oxides on Si and Higher Mobility Substrates and their Integration as High-k Gate Dielectrics in MOSFET Devices

MOSFETs with high mobility channel materials and higher-k/metal gate stack

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