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Novel Tunnel‐Contact‐Controlled IGZO Thin‐Film Transistors with High Tolerance to Geometrical Variability

Advanced materials (Weinheim), 2019-09, Vol.31 (36), p.e1902551-n/a

2019

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Effects of post-deposition vacuum annealing on film characteristics of p-type Cu2O and its impact on thin film transistor characteristics

Applied physics letters, 2016-10, Vol.109 (17)

2016

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Promoting Low-Voltage Saturation in High-Performance a-InGaZnO Source-Gated Transistors

IEEE transactions on electron devices, 2024-01, Vol.71 (1), p.581-587

2024

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Tail state mediated conduction in zinc tin oxide thinfilm phototransistors under below bandgap optical excitation

Scientific reports, 2021-09, Vol.11 (1), p.19016-19016, Article 19016

2021

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Coupled VO2 Oscillators Circuit as Analog First Layer Filter in Convolutional Neural Networks

Frontiers in neuroscience, 2021-02, Vol.15, p.628254-628254

2021

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Compact Source-Gated Transistor Analog Circuits for Ubiquitous Sensors

IEEE sensors journal, 2020-12, Vol.20 (24), p.14903-14913

2020

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Evidence of Improved Thermal Stability via Nanoscale Contact Engineering in IGZO Source-Gated Thin-Film Transistors

IEEE transactions on electron devices, 2023-07, Vol.70 (7), p.3582-3589

2023

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Photoconductive laser spectroscopy as a method to enhance defect spectral signatures in amorphous oxide semiconductor thin-film transistors

Applied physics letters, 2019-01, Vol.114 (1)

2019

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Role of ALD Al2O3 Surface Passivation on the Performance of p‑Type Cu2O Thin Film Transistors

ACS applied materials & interfaces, 2021-01, Vol.13 (3), p.4156-4164

2021

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Air Stable Indium-Gallium-Zinc-Oxide Diodes With a 6.4 GHz Extrinsic Cutoff Frequency Fabricated Using Adhesion Lithography

IEEE electron device letters, 2020-01, Vol.41 (1), p.175-178

2020

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Zinc tin oxide thin film transistors produced by a high rate reactive sputtering: Effect of tin composition and annealing temperatures

Physica status solidi. A, Applications and materials science, 2017-02, Vol.214 (2), p.np-n/a

2017

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Role of ALD Al 2 O 3 Surface Passivation on the Performance of p-Type Cu 2 O Thin Film Transistors

ACS applied materials & interfaces, 2021-01, Vol.13 (3), p.4156-4164

2021

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Multi-pulse atomic layer deposition of p-type SnO thin films: growth processes and the effect on TFT performance

Journal of materials chemistry. C, Materials for optical and electronic devices, 2023-05, Vol.11 (17), p.574-5749

2023

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Doping Density Extraction of Plasma Treated Metal Oxide Thin Film Diodes by Capacitance–Voltage Analysis

Advanced materials interfaces, 2023-06, Vol.10 (17), p.n/a

2023

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Influence of precursor dose and residence time on the growth rate and uniformity of vanadium dioxide thin films by atomic layer deposition

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2020-07, Vol.38 (4)

2020

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Antiferromagnetism and p‐type conductivity of nonstoichiometric nickel oxide thin films

InfoMat, 2020-07, Vol.2 (4), p.769-774

2020

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Preparation of atomic layer deposited vanadium dioxide thin films using tetrakis(ethylmethylamino) vanadium as precursor

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2020-09, Vol.38 (5)

2020

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Spectroscopic ellipsometry characterization of ZnO:Sn thin films with various Sn composition deposited by remote-plasma reactive sputtering

Applied surface science, 2017-11, Vol.421, p.557-564

2017

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(Invited) Achieving Lower Power Logic Using P-Type Metal Oxide Thin Film Transistors

ECS transactions, 2022-09, Vol.109 (6), p.13-17

2022

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Radio Frequency Temperature Transducers Based on Insulator-Metal Phase Transition in VO2 and Ge-Doped VO2 ALD Thin Films

2021 21st International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers), 2021, p.1355-1358

2021

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Tunable Stochastic Oscillator Based on Hybrid VO₂/TaOₓ Device for Compressed Sensing

IEEE electron device letters, 2021-01, Vol.42 (1), p.102-105

2021

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Coupled VO 2 Oscillators Circuit as Analog First Layer Filter in Convolutional Neural Networks

Frontiers in neuroscience, 2021, Vol.15, p.628254

2021

Volltextzugriff (PDF)

Zinc tin oxide thin film transistors produced by a high rate reactive sputtering: Effect of tin composition and annealing temperatures: Zinc tin oxide thin film transistors produced by reactive sputtering

Physica status solidi. A, Applications and materials science, 2017-02, Vol.214 (2), p.1600470

2017

Volltextzugriff (PDF)

(Invited) Instability Mechanisms in Amorphous Oxide Semiconductors Leading to a Threshold Voltage Shift in Thin Film Transistors

ECS transactions, 2017, Vol.79 (1), p.49-56

2017

Volltextzugriff (PDF)

(Invited) Stability under Gate Bias Stressing of Amorphous Oxide Thin Film Transistors

ECS transactions, 2016, Vol.75 (10), p.179-187

2016

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Novel Tunnel‐Contact‐Controlled IGZO Thin‐Film Transistors with High Tolerance to Geometrical Variability

Effects of post-deposition vacuum annealing on film characteristics of p-type Cu2O and its impact on thin film transistor characteristics

Promoting Low-Voltage Saturation in High-Performance a-InGaZnO Source-Gated Transistors

Tail state mediated conduction in zinc tin oxide thinfilm phototransistors under below bandgap optical excitation

Coupled VO2 Oscillators Circuit as Analog First Layer Filter in Convolutional Neural Networks

Compact Source-Gated Transistor Analog Circuits for Ubiquitous Sensors

Evidence of Improved Thermal Stability via Nanoscale Contact Engineering in IGZO Source-Gated Thin-Film Transistors

Photoconductive laser spectroscopy as a method to enhance defect spectral signatures in amorphous oxide semiconductor thin-film transistors

Role of ALD Al2O3 Surface Passivation on the Performance of p‑Type Cu2O Thin Film Transistors

Air Stable Indium-Gallium-Zinc-Oxide Diodes With a 6.4 GHz Extrinsic Cutoff Frequency Fabricated Using Adhesion Lithography

Zinc tin oxide thin film transistors produced by a high rate reactive sputtering: Effect of tin composition and annealing temperatures

Role of ALD Al 2 O 3 Surface Passivation on the Performance of p-Type Cu 2 O Thin Film Transistors

Multi-pulse atomic layer deposition of p-type SnO thin films: growth processes and the effect on TFT performance

Doping Density Extraction of Plasma Treated Metal Oxide Thin Film Diodes by Capacitance–Voltage Analysis

Influence of precursor dose and residence time on the growth rate and uniformity of vanadium dioxide thin films by atomic layer deposition

Antiferromagnetism and p‐type conductivity of nonstoichiometric nickel oxide thin films

Preparation of atomic layer deposited vanadium dioxide thin films using tetrakis(ethylmethylamino) vanadium as precursor

Spectroscopic ellipsometry characterization of ZnO:Sn thin films with various Sn composition deposited by remote-plasma reactive sputtering

(Invited) Achieving Lower Power Logic Using P-Type Metal Oxide Thin Film Transistors

Radio Frequency Temperature Transducers Based on Insulator-Metal Phase Transition in VO2 and Ge-Doped VO2 ALD Thin Films

Tunable Stochastic Oscillator Based on Hybrid VO₂/TaOₓ Device for Compressed Sensing

Coupled VO 2 Oscillators Circuit as Analog First Layer Filter in Convolutional Neural Networks

Zinc tin oxide thin film transistors produced by a high rate reactive sputtering: Effect of tin composition and annealing temperatures: Zinc tin oxide thin film transistors produced by reactive sputtering

(Invited) Instability Mechanisms in Amorphous Oxide Semiconductors Leading to a Threshold Voltage Shift in Thin Film Transistors

(Invited) Stability under Gate Bias Stressing of Amorphous Oxide Thin Film Transistors

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