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Synthesis design of artificial magnetic metamaterials using a genetic algorithm

Optics express, 2008-08, Vol.16 (17), p.12806-12818

2008

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Spatially direct and indirect transitions of self-assembled GeSi/Si quantum dots studied by photoluminescence excitation spectroscopy

Applied physics letters, 2010-05, Vol.96 (18), p.181107-181107-3

2010

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Laser-induced damage threshold of silicon in millisecond, nanosecond, and picosecond regimes

Journal of applied physics, 2010-08, Vol.108 (3), p.033103-033103-7

2010

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Growth-temperature-dependent band alignment in Si ∕ Ge quantum dots from photoluminescence spectroscopy

Physical review. B, Condensed matter and materials physics, 2006-05, Vol.73 (19), p.195319, Article 195319

2006

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Asymmetric relaxation of SiGe∕Si(110) investigated by high-resolution x-ray diffraction reciprocal space mapping

Applied physics letters, 2006-10, Vol.89 (18), p.181901

2006

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Surface damage morphology investigations of silicon under millisecond laser irradiation

Applied surface science, 2010-12, Vol.257 (5), p.1583-1588

2010

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The ejection threshold of molten aluminum induced by millisecond pulsed laser

Journal of applied physics, 2014-07, Vol.116 (1)

2014

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Axisymmetric analytical solution for pulsed laser melting of metals

Computational materials science, 2012-03, Vol.54, p.1-6

2012

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Spatially direct and indirect transitions observed for Si/Ge quantum dots

Applied physics letters, 2003-06, Vol.82 (26), p.4785-4787

2003

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Three-terminal Ge dot/SiGe quantum-well photodetectors for near-infrared light detection

Applied physics letters, 2006-08, Vol.89 (8), p.083510

2006

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Experimental and numerical study of a bubble induced by Nd:YAG laser at 1064 nm in the bulk and near a wall

European physical journal. Applied physics, 2012-05, Vol.58 (2), p.21101

2012

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Numerical simulation of laser-induced transient temperature field in film-substrate system by finite element method

International journal of heat and mass transfer, 2003-12, Vol.46 (25), p.4963-4968

2003

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Mathematical modeling of laser induced heating and melting in solids

Optics and laser technology, 2001-11, Vol.33 (8), p.533-537

2001

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Low-temperature molecular beam epitaxy growth of Si/SiGe THz quantum cascade structures on virtual substrates

Thin solid films, 2006-06, Vol.508 (1), p.24-28

2006

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The ejection of molten aluminum after the interaction with millisecond pulsed laser

Journal of optics (New Delhi), 2017-09, Vol.46 (3), p.231-240

2017

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Optical investigation of cavitation erosion by laser-induced bubble collapse

Optics and laser technology, 2004-04, Vol.36 (3), p.197-203

2004

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Suppressing phosphorus diffusion in germanium by carbon incorporation

Electronics letters, 2005-11, Vol.41 (24), p.1354-1355

2005

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In-process measuring of the electrical shunt resistance of laser-scribed thin-film stacks by nested circular scribes

Review of scientific instruments, 2013-10, Vol.84 (10), p.104704-104704

2013

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A fiber-optic diagnostic technique for mechanical detection of the laser–metal interaction underwater

Physics of fluids (1994), 2004-03, Vol.16 (3), p.832-835

2004

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Photoluminescence studies of Sn quantum dots in Si grown by MBE

Optical materials, 2005, Vol.27 (5), p.836-840

2005

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Strain relaxation of thin Si{sub 0.6}Ge{sub 0.4} grown with low-temperature buffers by molecular beam epitaxy

Journal of applied physics, 2009-03, Vol.105 (6)

2009

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X-ray reciprocal space mapping studies of strain relaxation in thin SiGe layers (⩽100 nm) using a low temperature growth step

Journal of Crystal Growth, 2001-07, Vol.227, p.756-760

2001

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Strain-symmetrized Si/SiGe multi-quantum well structures grown by molecular beam epitaxy for intersubband engineering

Journal of luminescence, 2006, Vol.121 (2), p.403-408

2006

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Photoluminescence study of Si/Ge quantum dots

Surface science, 2003-06, Vol.532, p.832-836

2003

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Strain relaxation of thin Si0.6Ge0.4 grown with low-temperature buffers by molecular beam epitaxy

Journal of applied physics, 2009, Vol.105 (6), p.063502

2009

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Synthesis design of artificial magnetic metamaterials using a genetic algorithm

Spatially direct and indirect transitions of self-assembled GeSi/Si quantum dots studied by photoluminescence excitation spectroscopy

Laser-induced damage threshold of silicon in millisecond, nanosecond, and picosecond regimes

Growth-temperature-dependent band alignment in Si ∕ Ge quantum dots from photoluminescence spectroscopy

Asymmetric relaxation of SiGe∕Si(110) investigated by high-resolution x-ray diffraction reciprocal space mapping

Surface damage morphology investigations of silicon under millisecond laser irradiation

The ejection threshold of molten aluminum induced by millisecond pulsed laser

Axisymmetric analytical solution for pulsed laser melting of metals

Spatially direct and indirect transitions observed for Si/Ge quantum dots

Three-terminal Ge dot/SiGe quantum-well photodetectors for near-infrared light detection

Experimental and numerical study of a bubble induced by Nd:YAG laser at 1064 nm in the bulk and near a wall

Numerical simulation of laser-induced transient temperature field in film-substrate system by finite element method

Mathematical modeling of laser induced heating and melting in solids

Low-temperature molecular beam epitaxy growth of Si/SiGe THz quantum cascade structures on virtual substrates

The ejection of molten aluminum after the interaction with millisecond pulsed laser

Optical investigation of cavitation erosion by laser-induced bubble collapse

Suppressing phosphorus diffusion in germanium by carbon incorporation

In-process measuring of the electrical shunt resistance of laser-scribed thin-film stacks by nested circular scribes

A fiber-optic diagnostic technique for mechanical detection of the laser–metal interaction underwater

Photoluminescence studies of Sn quantum dots in Si grown by MBE

Strain relaxation of thin Si{sub 0.6}Ge{sub 0.4} grown with low-temperature buffers by molecular beam epitaxy

X-ray reciprocal space mapping studies of strain relaxation in thin SiGe layers (⩽100 nm) using a low temperature growth step

Strain-symmetrized Si/SiGe multi-quantum well structures grown by molecular beam epitaxy for intersubband engineering

Photoluminescence study of Si/Ge quantum dots

Strain relaxation of thin Si0.6Ge0.4 grown with low-temperature buffers by molecular beam epitaxy

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