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Chirality-selective topological magnon phase transition induced by interplay of anisotropic exchange interactions in honeycomb ferromagnet

Journal of physics. Condensed matter, 2024-06, Vol.36 (25), p.255801

2024

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The improvement of ohmic contact of Ti/Al/Ni/Au to AlGaN/GaN HEMT by multi-step annealing method

Solid-state electronics, 2009-09, Vol.53 (9), p.955-958

2009

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Topological magnons in one-dimensional ferromagnetic Su–Schrieffer–Heeger model with anisotropic interaction

Journal of physics. Condensed matter, 2022-12, Vol.34 (49), p.495801

2022

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AlGaN/GaN HEMTs on 4-Inch Silicon Substrates in the Presence of 2.7-μm -Thick Epilayers with the Maximum Off-State Breakdown Voltage of 500 V

Chinese physics letters, 2014-03, Vol.31 (3), p.129-132

2014

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GaN MOS-HEMT Using Ultra-Thin Al2O3 Dielectric Grown by Atomic Layer Deposition

Chinese physics letters, 2007-08, Vol.24, p.2419

2007

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Comparative study of different properties of GaN films grown on (0001) sapphire using high and low temperature AlN interlayers

Chinese physics B, 2010-05, Vol.19 (5), p.057203-057203

2010

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A study on Al2O3 passivation in GaN MOS-HEMT by pulsed stress

Chinese physics B, 2008-04, Vol.17, p.1405

2008

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Influence of high-temperature AlN interlayer on the electrical properties of AlGaN/GaN heterostructure and HEMTs

Wuli xuebao, 2009-07, Vol.58 (7), p.4925

2009

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High-electric-field-stress-induced degradation of SiN passivated AlGaN/GaN high electron mobility transistors

Chinese physics B, 2009-04, Vol.18 (4), p.1601-1608

2009

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Analysis and finite element simulation of electromagnetic heating in the nitride MOCVD reactor

Chinese physics B, 2009-11, Vol.18 (11), p.5072-5077

2009

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The effect of back-barrier layer on the carrier distribution in the AlGaN/GaN double-heterostructure

Wuli xuebao, 2009-05, Vol.58 (5), p.3409

2009

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Comparison of measuring methods of sheet carrier density in AlGaN/GaN heterostructures

Wuli xuebao, 2007-11, Vol.56 (11), p.6629

2007

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Development and validation of a circulating tumor DNA-based optimization-prediction model for short-term postoperative recurrence of endometrial cancer

World journal of clinical cases, 2024-06, Vol.12 (18), p.3385-3394

2024

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Hot-carrier degradation for 90 nm gate length LDD-NMOSFET with ultra-thin gate oxide under low gate voltage stress

Chinese physics (Beijing, China), 2007-03, Vol.16 (3), p.821-825

2007

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diversity of human papillomavirus infection among human immunodeficiency virus-infected women in Yunnan, China

Virology journal, 2014-12, Vol.11 (1), p.202-202, Article 202

2014

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Structure and Strain Properties of GaN Films Grown on Si (111) Substrates with Al x Ga 1− x N/Al y Ga 1− y N Superlattices

Chinese physics letters, 2015-05, Vol.32 (5), p.58103

2015

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Structure and Strain Properties of GaN Films Grown on Si (111) Substrates with Al sub(x)Ga sub(1-x) N/Al sub(y)Ga sub(1-y)N Superlattices

Chinese physics letters, 2015-05, Vol.32 (5), p.058103-1-058103-4

2015

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Structure and Strain Properties of GaN Films Grown on Si (111) Substrates with AlxGa1−xN/AlyGa1−yN SuperlatticesSupported by the National Natural Science Foundation of China under Grant Nos 61076120 and 61106130, and the Natural Science Foundation and Scientific Support Plan of Jiangsu Province under Grant Nos BK2012516, BK20131072, and BE2012007

Chinese physics letters, 2015-05, Vol.32 (5)

2015

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The mobility of two-dimensional electron gas in AlGaN/GaN heterostructures with varied Al content

Science China. Information sciences, 2008-06, Vol.51 (6), p.780-789

2008

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Effect of reactor pressure on the growth rate and structural properties of GaN films

Chinese science bulletin, 2009-08, Vol.54 (15), p.2595-2598

2009

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High Breakdown Voltage GaN Power HEMT on Si Substrate

Advanced materials research, 2013, Vol.805-806, p.948-953

2013

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2DEG Transport Properties in AlGaN/GaN Double Heterostructure HEMT with High In Composition InGaN Channel

Advanced materials research, 2013, Vol.805-806, p.1027-1030

2013

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Properties of N-Polar GaN Films Grown by MOCVD on C-Face 6H-SiC Substrate

Advanced materials research, 2013, Vol.805-806, p.1035-1038

2013

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The improvement of Al2O3/AlGaN/GaN MISHEMT performance by N2 plasma pretreatment

Chinese physics B, 2009-07, Vol.18, p.3014

2009

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Research on steganalysis method for images

Ni, Jin Yu

2011

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Chirality-selective topological magnon phase transition induced by interplay of anisotropic exchange interactions in honeycomb ferromagnet

The improvement of ohmic contact of Ti/Al/Ni/Au to AlGaN/GaN HEMT by multi-step annealing method

Topological magnons in one-dimensional ferromagnetic Su–Schrieffer–Heeger model with anisotropic interaction

AlGaN/GaN HEMTs on 4-Inch Silicon Substrates in the Presence of 2.7-μm -Thick Epilayers with the Maximum Off-State Breakdown Voltage of 500 V

GaN MOS-HEMT Using Ultra-Thin Al2O3 Dielectric Grown by Atomic Layer Deposition

Comparative study of different properties of GaN films grown on (0001) sapphire using high and low temperature AlN interlayers

A study on Al2O3 passivation in GaN MOS-HEMT by pulsed stress

Influence of high-temperature AlN interlayer on the electrical properties of AlGaN/GaN heterostructure and HEMTs

High-electric-field-stress-induced degradation of SiN passivated AlGaN/GaN high electron mobility transistors

Analysis and finite element simulation of electromagnetic heating in the nitride MOCVD reactor

The effect of back-barrier layer on the carrier distribution in the AlGaN/GaN double-heterostructure

Comparison of measuring methods of sheet carrier density in AlGaN/GaN heterostructures

Development and validation of a circulating tumor DNA-based optimization-prediction model for short-term postoperative recurrence of endometrial cancer

Hot-carrier degradation for 90 nm gate length LDD-NMOSFET with ultra-thin gate oxide under low gate voltage stress

diversity of human papillomavirus infection among human immunodeficiency virus-infected women in Yunnan, China

Structure and Strain Properties of GaN Films Grown on Si (111) Substrates with Al x Ga 1− x N/Al y Ga 1− y N Superlattices

Structure and Strain Properties of GaN Films Grown on Si (111) Substrates with Al sub(x)Ga sub(1-x) N/Al sub(y)Ga sub(1-y)N Superlattices

The mobility of two-dimensional electron gas in AlGaN/GaN heterostructures with varied Al content

Effect of reactor pressure on the growth rate and structural properties of GaN films

High Breakdown Voltage GaN Power HEMT on Si Substrate

2DEG Transport Properties in AlGaN/GaN Double Heterostructure HEMT with High In Composition InGaN Channel

Properties of N-Polar GaN Films Grown by MOCVD on C-Face 6H-SiC Substrate

The improvement of Al2O3/AlGaN/GaN MISHEMT performance by N2 plasma pretreatment

Research on steganalysis method for images

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