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Structural and optical properties of r.f.-sputtered SixC1 − x:O films

Thin solid films, 1995-04, Vol.259 (1), p.18-24

1995

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The growth of Pd thin films on a 6H-SiC(0 0 0 1) substrate

Journal of crystal growth, 2007-03, Vol.300 (2), p.368-373

2007

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A photoemission study of erbium silicide ultra-thin films epitaxially grown on Si(111)

Applied surface science, 1993-03, Vol.65 (1-4), p.712-717

1993

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Interfacial reaction between Ta ultrathin films and Si(111) substrate

Surface science, 1987-10, Vol.189, p.339-345

1987

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Interfacial reaction of erbium on homoepitaxial diamond (100) films

Applied surface science, 2000-10, Vol.166 (1), p.119-124

2000

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Carbide contacts on homoepitaxial diamond films

Diamond and related materials, 1999-03, Vol.8 (2), p.961-965

1999

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Reaction of palladium thin films with an Si-rich 6H-SiC(0001)(3×3) surface

Diamond and related materials, 1999-03, Vol.8 (2), p.352-356

1999

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Properties of semiconducting rhenium silicide thin films grown epitaxially on silicon (111)

Applied surface science, 1996-08, Vol.102, p.147-150

1996

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Oxidation of thin erbium and erbium silicide overlayers in contact with silicon oxide films thermally grown on silicon

Applied surface science, 1996, Vol.102, p.142-146

1996

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Interaction of oxygen with (Er + Si) : formation of erbium pyrosilicate Er2Si2O7

Applied surface science, 1997-02, Vol.108 (2), p.251-256

1997

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Interaction of oxygen with (Er + Si): formation of erbium pyrosilicate Er 2Si 2O 7

Applied surface science, 1997, Vol.108 (2), p.251-256

1997

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Atomic structure of epitaxial Er silicides grown on Si(111) studied by surface extended X-ray absorption fine structure

Surface science, 1994-04, Vol.307, p.710-715

1994

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The influence of growth techniques on the structure of epitaxial ErSi1.7 on Si(111)

Applied surface science, 1993-03, Vol.65-66, p.704-711

1993

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Growth and characterization of the [formula omitted] interface

Surface science, 1996-05, Vol.352, p.628-633

1996

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Heteroepitaxy of metallic and semiconducting silicides on silicon

Applied surface science, 1990-01, Vol.41-42, p.241-252

1990

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Surface electronic structure of erbium silicide epitaxially grown on Si(111)

Surface science, 1992-05, Vol.269-270, p.964-969

1992

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On the formation of molybdenum silicides in MoSi multilayers: the effect of Mo thickness and annealing temperature

Applied surface science, 1992-02, Vol.55 (2-3), p.165-171

1992

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Oxidation of thin ErSi 1.7 overlayers on Si(111)

Applied surface science, 1992, Vol.56, p.501-506

1992

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Formation and electronic structure of terbium silicide epitaxially grown on Si(111)

Solid state communications, 1991-09, Vol.79 (10), p.795-798

1991

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Oxidation of thin ErSi1.7 overlayers on Si(111)

Applied surface science, 1992, Vol.56-58, p.501-506

1992

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The influence of growth techniques on the structure of epitaxial ErSi 1.7 on Si(111)

Applied surface science, 1993, Vol.65, p.704-711

1993

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Oxidation of TaSi2 thin films on polycrystalline Si

Applied surface science, 1990-01, Vol.41-42, p.266-271

1990

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A photoemission study of the interdiffusion of Si in Er films deposited on Si(111)(7 × 7) at room temperature

Surface science, 1992-05, Vol.269-270, p.959-963

1992

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Characterization and electronic properties of the Tb/Si(111)7 × 7 interface

Applied surface science, 1992, Vol.56, p.520-524

1992

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A physico-chemical study of all-sputtered Al/CdS interfaces

Applied surface science, 1992, Vol.55 (1), p.87-94

1992

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Structural and optical properties of r.f.-sputtered SixC1 − x:O films

The growth of Pd thin films on a 6H-SiC(0 0 0 1) substrate

A photoemission study of erbium silicide ultra-thin films epitaxially grown on Si(111)

Interfacial reaction between Ta ultrathin films and Si(111) substrate

Interfacial reaction of erbium on homoepitaxial diamond (100) films

Carbide contacts on homoepitaxial diamond films

Reaction of palladium thin films with an Si-rich 6H-SiC(0001)(3×3) surface

Properties of semiconducting rhenium silicide thin films grown epitaxially on silicon (111)

Oxidation of thin erbium and erbium silicide overlayers in contact with silicon oxide films thermally grown on silicon

Interaction of oxygen with (Er + Si) : formation of erbium pyrosilicate Er2Si2O7

Interaction of oxygen with (Er + Si): formation of erbium pyrosilicate Er 2Si 2O 7

Atomic structure of epitaxial Er silicides grown on Si(111) studied by surface extended X-ray absorption fine structure

The influence of growth techniques on the structure of epitaxial ErSi1.7 on Si(111)

Growth and characterization of the [formula omitted] interface

Heteroepitaxy of metallic and semiconducting silicides on silicon

Surface electronic structure of erbium silicide epitaxially grown on Si(111)

On the formation of molybdenum silicides in MoSi multilayers: the effect of Mo thickness and annealing temperature

Oxidation of thin ErSi 1.7 overlayers on Si(111)

Formation and electronic structure of terbium silicide epitaxially grown on Si(111)

Oxidation of thin ErSi1.7 overlayers on Si(111)

The influence of growth techniques on the structure of epitaxial ErSi 1.7 on Si(111)

Oxidation of TaSi2 thin films on polycrystalline Si

A photoemission study of the interdiffusion of Si in Er films deposited on Si(111)(7 × 7) at room temperature

Characterization and electronic properties of the Tb/Si(111)7 × 7 interface

A physico-chemical study of all-sputtered Al/CdS interfaces

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