UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 127

Sortiert nach

Disturb-Free Writing Operation for Ferroelectric-Gate Field-Effect Transistor Memories With Intermediate Electrodes

IEEE transactions on electron devices, 2009-12, Vol.56 (12), p.3090-3096

2009

Volltextzugriff (PDF)

Solution-Processed Cupric Oxide P-type Channel Thin-Film Transistors

Thin solid films, 2020-06, Vol.704, p.137991, Article 137991

2020

Volltextzugriff (PDF)

Solution processed In-Si-O thin film transistors on hydrophilic and hydrophobic substrates

Thin solid films, 2020-03, Vol.698, p.137860, Article 137860

2020

Volltextzugriff (PDF)

Solution-processed CuO thin films with various Cu2+ ion concentrations

Thin solid films, 2018-08, Vol.660, p.819-823

2018

Volltextzugriff (PDF)

Enhancing the absorption figure of merit on solution-based CuO thin films by Ni doping

Optical materials. X, 2023-07, Vol.19, p.100246, Article 100246

2023

Volltextzugriff (PDF)

Optimization of Pt and PZT Films for Ferroelectric-Gate Thin Film Transistors

Ferroelectrics, 2010-10, Vol.405 (1), p.281-291

2010

Volltextzugriff (PDF)

Solution-processable zinc oxide based thin films with different aluminum doping concentrations

Journal of science. Advanced materials and devices, 2020-12, Vol.5 (4), p.497-501

2020

Volltextzugriff (PDF)

Structural, optical, and electrical properties of multi-component P-type oxide-semiconductor Cu-Mn-Sn-O thin films

Thin solid films, 2024-08, Vol.802, p.140441, Article 140441

2024

Volltextzugriff (PDF)

Totally solution-processed ferroelectric-gate thin-film transistor

Applied physics letters, 2010-10, Vol.97 (17), p.173509-173509-3

2010

Volltextzugriff (PDF)

Ferroelectric-Gate Thin-Film Transistor Fabricated by Total Solution Deposition Process

Japanese Journal of Applied Physics, 2011-04, Vol.50 (4), p.04DD09-04DD09-6

2011

Volltextzugriff (PDF)

A low-temperature crystallization path for device-quality ferroelectric films

Applied physics letters, 2010-09, Vol.97 (10), p.102905-102905-3

2010

Volltextzugriff (PDF)

Fabrication of 120-nm-channel-length ferroelectric-gate thin-film transistor by nanoimprint lithography

Japanese Journal of Applied Physics, 2014, Vol.53 (2S), p.2-1-02BC14-4

2014

Volltextzugriff (PDF)

Switchable voltage control of the magnetic anisotropy in heterostructured nanocomposites of CoFe/NiFe/PZT

Journal of the Korean Physical Society, 2013, 63(3), , pp.812-816

2013

Volltextzugriff (PDF)

Synthesis of undoped and M-doped ZnO (M = Co, Mn) nanopowder in water using microwave irradiation

Journal of physics. Conference series, 2009-09, Vol.187 (1), p.012020

2009

Volltextzugriff (PDF)

Electric Properties and Interface Charge Trap Density of Ferroelectric Gate Thin Film Transistor Using (Bi,La)4Ti3O12/Pb(Zr,Ti)O3 Stacked Gate Insulator

Jpn J Appl Phys, 2012-09, Vol.51 (9), p.09LA09-09LA09-5

2012

Volltextzugriff (PDF)

Interface Charge Trap Density of Solution Processed Ferroelectric Gate Thin Film Transistor Using ITO/PZT/Pt Structure

Ferroelectrics. Letters section, 2013-01, Vol.40 (1-3), p.17-29

2013

Volltextzugriff (PDF)

Highly efficient photo-induced surface enhanced Raman spectroscopy from ZnO/Au nanorods

Optical materials, 2022-12, Vol.134, p.113069, Article 113069

2022

Volltextzugriff (PDF)

Ferroelectric-Gate Thin-Film Transistor Fabricated by Total Solution Deposition Process

Japanese Journal of Applied Physics, 2011-04, Vol.50 (4S), p.4

2011

Volltextzugriff (PDF)

Sub-100 nm Ferroelectric-Gate Thin-Film Transistor with Low-Temperature PZT Fabricated on SiO 2 /Si Substrate

Ferroelectrics. Letters section, 2015-05, Vol.42 (1-3), p.65-74

2015

Volltextzugriff (PDF)

Sub-100 nm Ferroelectric-Gate Thin-Film Transistor with Low-Temperature PZT Fabricated on SiO2/Si Substrate

Ferroelectrics. Letters section, 2015-05, Vol.42 (1-3), p.65-74

2015

Volltextzugriff (PDF)

Sub-100 nm Ferroelectric-Gate Thin-Film Transistor with Low-Temperature PZT Fabricated on SiO sub(2)/Si Substrate

Ferroelectrics. Letters section, 2015-05, Vol.42 (1-3), p.65-74

2015

Volltextzugriff (PDF)

Improvement of Nondestructive Readout of Ferroelectric Gate FET Memory with an Intermediate Electrode by using New Data Writing and Reading Methods

2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics, 2007, p.58-61

2007

Volltextzugriff (PDF)

Sub-100 nm Ferroelectric-Gate Thin-Film Transistor with Low-Temperature PZT Fabricated on SiO^sub 2^/Si Substrate

Ferroelectrics. Letters section, 2015-01, Vol.42 (1-3), p.65

2015

Volltextzugriff (PDF)

Nondestructive Readout of Ferroelectric-Gate Field-Effect Transistor Memory With an Intermediate Electrode by Using an Improved Operation Method

IEEE transactions on electron devices, 2008-11, Vol.55 (11), p.3200-3207

2008

Volltextzugriff (PDF)

Electric Properties and Interface Charge Trap Density of Ferroelectric Gate Thin Film Transistor Using (Bi,La) 4 Ti 3 O 12 /Pb(Zr,Ti)O 3 Stacked Gate Insulator

Japanese Journal of Applied Physics, 2012-09, Vol.51 (9S1), p.9

2012

Volltextzugriff (PDF)

1 – 25 von 127

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(92)
Mit Volltextzugriff
(116)

Publikationsform

Sprache

Erscheinungsjahr

n.n

Thema

Science & Technology
(80)
Technology
(39)
Life Sciences & Biomedicine
(34)
Physical Sciences
(33)
Engineering
(28)
Physics
(18)
Vietnam
(17)
Science & Technology - Other Topics
(14)
Materials Science
(13)
Physics, Applied
(13)
Engineering, Civil
(12)
Materials Science, Multidisciplinary
(11)
Electrodes
(10)
Humans
(10)
Engineering, Electrical & Electronic
(9)
Environmental Sciences & Ecology
(9)
Environmental Sciences
(8)
Physics, Condensed Matter
(8)
Geology
(7)
Green & Sustainable Science & Technology
(7)

15 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 30 Tagen
(1)
... seit 90 Tagen
(5)

Menü

Weitere Dienste

Einstellungen

Disturb-Free Writing Operation for Ferroelectric-Gate Field-Effect Transistor Memories With Intermediate Electrodes

Solution-Processed Cupric Oxide P-type Channel Thin-Film Transistors

Solution processed In-Si-O thin film transistors on hydrophilic and hydrophobic substrates

Solution-processed CuO thin films with various Cu2+ ion concentrations

Enhancing the absorption figure of merit on solution-based CuO thin films by Ni doping

Optimization of Pt and PZT Films for Ferroelectric-Gate Thin Film Transistors

Solution-processable zinc oxide based thin films with different aluminum doping concentrations

Structural, optical, and electrical properties of multi-component P-type oxide-semiconductor Cu-Mn-Sn-O thin films

Totally solution-processed ferroelectric-gate thin-film transistor

Ferroelectric-Gate Thin-Film Transistor Fabricated by Total Solution Deposition Process

A low-temperature crystallization path for device-quality ferroelectric films

Fabrication of 120-nm-channel-length ferroelectric-gate thin-film transistor by nanoimprint lithography

Switchable voltage control of the magnetic anisotropy in heterostructured nanocomposites of CoFe/NiFe/PZT

Synthesis of undoped and M-doped ZnO (M = Co, Mn) nanopowder in water using microwave irradiation

Electric Properties and Interface Charge Trap Density of Ferroelectric Gate Thin Film Transistor Using (Bi,La)4Ti3O12/Pb(Zr,Ti)O3 Stacked Gate Insulator

Interface Charge Trap Density of Solution Processed Ferroelectric Gate Thin Film Transistor Using ITO/PZT/Pt Structure

Highly efficient photo-induced surface enhanced Raman spectroscopy from ZnO/Au nanorods

Ferroelectric-Gate Thin-Film Transistor Fabricated by Total Solution Deposition Process

Sub-100 nm Ferroelectric-Gate Thin-Film Transistor with Low-Temperature PZT Fabricated on SiO 2 /Si Substrate

Sub-100 nm Ferroelectric-Gate Thin-Film Transistor with Low-Temperature PZT Fabricated on SiO2/Si Substrate

Sub-100 nm Ferroelectric-Gate Thin-Film Transistor with Low-Temperature PZT Fabricated on SiO sub(2)/Si Substrate

Improvement of Nondestructive Readout of Ferroelectric Gate FET Memory with an Intermediate Electrode by using New Data Writing and Reading Methods

Sub-100 nm Ferroelectric-Gate Thin-Film Transistor with Low-Temperature PZT Fabricated on SiO^sub 2^/Si Substrate

Nondestructive Readout of Ferroelectric-Gate Field-Effect Transistor Memory With an Intermediate Electrode by Using an Improved Operation Method

Electric Properties and Interface Charge Trap Density of Ferroelectric Gate Thin Film Transistor Using (Bi,La) 4 Ti 3 O 12 /Pb(Zr,Ti)O 3 Stacked Gate Insulator

Suchergebnisse filtern