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Role of two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistor (HEMT) ON-state degradation

Microelectronics and reliability, 2016-09, Vol.64, p.589-593

2016

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Improved Microwave Noise Performance by SiN Passivation in AlGaN/GaN HEMTs on Si

IEEE microwave and wireless components letters, 2009-06, Vol.19 (6), p.383-385

2009

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Mechanism of Increased High-Frequency Channel Noise With PECVD SiN Passivation in AlGaN/GaN HEMTs

IEEE electron device letters, 2009-11, Vol.30 (11), p.1122-1124

2009

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Improved interface state density by low temperature epitaxy grown AlN for AlGaN/GaN metal-insulator-semiconductor diodes

Materials science & engineering. B, Solid-state materials for advanced technology, 2020-12, Vol.262, p.114707, Article 114707

2020

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Improved breakdown voltage in vertical GaN Schottky barrier diodes on free-standing GaN with Mg-compensated drift layer

Japanese Journal of Applied Physics, 2020-01, Vol.59 (1), p.10906

2020

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Investigation of the role of pre-existing oxide in the initial degradation mechanism in AlGaN/GaN HEMTs under ON-state stress

Microelectronics and reliability, 2023-11, Vol.150, p.115165, Article 115165

2023

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Temperature dependent microwave performance of AlGaN/GaN high-electron-mobility transistors on high-resistivity silicon substrate

Thin solid films, 2007-03, Vol.515 (10), p.4517-4521

2007

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Characterization of beryllium doped Al0.33Ga0.67As layers grown by molecular beam epitaxy

Journal of crystal growth, 1999-03, Vol.197 (4), p.762-768

1999

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Growth optimization of InGaP layers by solid source molecular beam epitaxy for the application of InGaP/In0.2Ga0.8As/GaAs high electron mobility transistor structures

Journal of crystal growth, 2000-06, Vol.216 (1-4), p.51-56

2000

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High-performance modulation-doped AlGaAs/InGaAs thermopiles for uncooled infrared FPA application

Infrared physics & technology, 2013-07, Vol.59, p.182-187

2013

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The effects of beryllium doping in InGaAlAs layers grown by molecular beam epitaxy

Journal of crystal growth, 1998-10, Vol.193 (3), p.285-292

1998

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Study of current collapse by quiescent-bias-stresses in rf-plasma assisted MBE grown AlGaN/GaN high-electron-mobility transistors

Solid-state electronics, 2010-11, Vol.54 (11), p.1430-1433

2010

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Temperature dependent microwave noise parameters and modeling of AlGaN/GaN HEMTs on Si substrate

2009 IEEE MTT-S International Microwave Symposium Digest, 2009, p.777-780

2009

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W-band monolithic oscillator using InAlAs/InGaAs HEMT

Electronics letters, 1990-08, Vol.26 (18), p.1425-1426

1990

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Effects of Drift Layer Thicknesses in Reverse Conduction Mechanism on Vertical GaN-on-GaN SBDs grown by MOCVD

2019 Electron Devices Technology and Manufacturing Conference (EDTM), 2019, p.106-108

2019

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Temperature-dependent microwave noise characteristics of AlGaN/GaN HEMTs on silicon substrate

2008 Device Research Conference, 2008, p.127-128

2008

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Improved strained HEMT characteristics using double-heterojunction In/sub 0.65/Ga/sub 0.35/As/In/sub 0.52/Al/sub 0.48/As design

IEEE electron device letters, 1989-03, Vol.10 (3), p.114-116

1989

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Method for determining the source and drain resistance of double heterojunction -doped PHEMTs

Electronics letters, 1999, Vol.35 (14), p.1198

1999

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Improved transport properties of In xGa 1− xP/In 0.2Ga 0.8As/GaAs pseudomorphic high electron mobility transistor structures

Solid state communications, 1999, Vol.112 (12), p.661-664

1999

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Suppression of I-V kink in doped channel InAlAs/InGaAs/InP heterojunction field-effect transistor (HFET) using silicon nitride passivation

Electronics letters, 1996-10, Vol.32 (21), p.2026

1996

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0.10 μm graded InGaAs channel InP HEMT with 305 GHz fT and 340 GHz fmax

IEEE electron device letters, 1994-11, Vol.15 (11), p.477-479

1994

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Optimization of In xGa 1− xP/In 0.2Ga 0.8As/GaAs high electron mobility transistor structures grown by solid source molecular beam epitaxy

Materials science & engineering. B, Solid-state materials for advanced technology, 2000, Vol.75 (2), p.110-114

2000

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Characterization of beryllium doped Al 0.33Ga 0.67As layers grown by molecular beam epitaxy

Journal of crystal growth, 1999, Vol.197 (4), p.762-768

1999

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Characterization of silicon-doped InP grown by solid-source molecular beam epitaxy using a valved phosphorus cracker cell

Journal of crystal growth, 1999-07, Vol.204 (3), p.275-281

1999

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Band gap narrowing effect in Be-doped Al xGa 1− xAs studied by photoluminescence spectroscopy

Solid-state electronics, 2000, Vol.44 (1), p.37-40

2000

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Role of two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistor (HEMT) ON-state degradation

Improved Microwave Noise Performance by SiN Passivation in AlGaN/GaN HEMTs on Si

Mechanism of Increased High-Frequency Channel Noise With PECVD SiN Passivation in AlGaN/GaN HEMTs

Improved interface state density by low temperature epitaxy grown AlN for AlGaN/GaN metal-insulator-semiconductor diodes

Improved breakdown voltage in vertical GaN Schottky barrier diodes on free-standing GaN with Mg-compensated drift layer

Investigation of the role of pre-existing oxide in the initial degradation mechanism in AlGaN/GaN HEMTs under ON-state stress

Temperature dependent microwave performance of AlGaN/GaN high-electron-mobility transistors on high-resistivity silicon substrate

Characterization of beryllium doped Al0.33Ga0.67As layers grown by molecular beam epitaxy

Growth optimization of InGaP layers by solid source molecular beam epitaxy for the application of InGaP/In0.2Ga0.8As/GaAs high electron mobility transistor structures

High-performance modulation-doped AlGaAs/InGaAs thermopiles for uncooled infrared FPA application

The effects of beryllium doping in InGaAlAs layers grown by molecular beam epitaxy

Study of current collapse by quiescent-bias-stresses in rf-plasma assisted MBE grown AlGaN/GaN high-electron-mobility transistors

Temperature dependent microwave noise parameters and modeling of AlGaN/GaN HEMTs on Si substrate

W-band monolithic oscillator using InAlAs/InGaAs HEMT

Effects of Drift Layer Thicknesses in Reverse Conduction Mechanism on Vertical GaN-on-GaN SBDs grown by MOCVD

Temperature-dependent microwave noise characteristics of AlGaN/GaN HEMTs on silicon substrate

Improved strained HEMT characteristics using double-heterojunction In/sub 0.65/Ga/sub 0.35/As/In/sub 0.52/Al/sub 0.48/As design

Method for determining the source and drain resistance of double heterojunction -doped PHEMTs

Improved transport properties of In xGa 1− xP/In 0.2Ga 0.8As/GaAs pseudomorphic high electron mobility transistor structures

Suppression of I-V kink in doped channel InAlAs/InGaAs/InP heterojunction field-effect transistor (HFET) using silicon nitride passivation

0.10 μm graded InGaAs channel InP HEMT with 305 GHz fT and 340 GHz fmax

Optimization of In xGa 1− xP/In 0.2Ga 0.8As/GaAs high electron mobility transistor structures grown by solid source molecular beam epitaxy

Characterization of beryllium doped Al 0.33Ga 0.67As layers grown by molecular beam epitaxy

Characterization of silicon-doped InP grown by solid-source molecular beam epitaxy using a valved phosphorus cracker cell

Band gap narrowing effect in Be-doped Al xGa 1− xAs studied by photoluminescence spectroscopy

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