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Electrically controlled hybrid superconductor–ferromagnet cell for high density cryogenic memory

Applied physics letters, 2023-08, Vol.123 (7)

2023

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Josephson Oscillators Based on Amorphous Superconductors

IEEE transactions on applied superconductivity, 2023-08, Vol.33 (5), p.1-5

2023

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Josephson junctions based on amorphous MoGe: prospects for use in superconducting electronics

Superconductor science & technology, 2022-03, Vol.35 (3), p.35008

2022

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Peculiar interference pattern of Josephson junctions involving periodic ferromagnet-normal metal structure

Superconductor science & technology, 2018-01, Vol.31 (3), p.3

2018

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Significantly improved dehydrogenation of LiAlH4 catalysed with TiO2 nanopowder

International journal of hydrogen energy, 2011-07, Vol.36 (14), p.8327-8334

2011

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Multi-Terminal Superconducting Nonequilibrium Device With a Ferromagnetic Screen

IEEE transactions on applied superconductivity, 2011-06, Vol.21 (3), p.721-723

2011

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Direct study of the proximity effect in the normal layer inside of the stacked SINIS device

Physical review letters, 2005-12, Vol.95 (24), p.247008.1-247008.4, Article 247008

2005

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Control of Superconductivity in a Hybrid Superconducting/Ferromagnetic Multilayer Using Nonequilibrium Tunneling Injection

Physical review applied, 2016-08, Vol.6 (2), Article 024018

2016

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A superconducting transistor with improved isolation between the input and output terminals

Superconductor science & technology, 2009-10, Vol.22 (10), p.105009-105009 (6), Article 105009

Nevirkovets, I P

2009

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Microwave absorption measurements of the heavy-fermion superconductor CeCoIn5

Physica. C, Superconductivity, 2008-03, Vol.468 (5), p.432-434

2008

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Characteristics of CeCoIn5/Al/AlOx/Nb and CeCoIn5/Al/AlOx/Al tunnel junctions

Physica. C, Superconductivity, 2009-04, Vol.469 (7-8), p.293-296

2009

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Fabrication and characteristics of multi-terminal SINIS devices

IEEE transactions on applied superconductivity, 2005-06, Vol.15 (2), p.129-132

2005

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Hybrid superconductor–ferromagnet transistor-like device

Superconductor science & technology, 2011-02, Vol.24 (2), p.024009-024009

2011

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A qubit device based on manipulations of Andreev bound states in double-barrier Josephson junctions

Solid state communications, 2002-03, Vol.121 (9), p.457-460

2002

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Observation of fractional vortices and π phases in Josephson junctions involving periodic magnetic layers

Physical review. B, 2023-07, Vol.108 (2), Article 024503

Nevirkovets, I. P.

2023

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Current–voltage characteristics of Nb–carbon–Nb junctions

Low temperature physics (Woodbury, N.Y.), 2014-03, Vol.40 (3), p.191-198

2014

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Anomalous critical current in double-barrier Nb/Al–AlOx–Al–AlOx–Nb devices

Applied physics letters, 1999-03, Vol.74 (11), p.1624-1626

1999

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Damping and modal structure of patterned magnetic nanoarrays

Journal of magnetism and magnetic materials, 2009-10, Vol.321 (19), p.3324-3329

2009

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Relaxation oscillations in asymmetric superconducting tunnel junctions and their potential application to the detection of high-energy particles

Superconductor science & technology, 1998-08, Vol.11 (8), p.711-715

Nevirkovets, I P

1998

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Memory Cell for High-Density Arrays Based on a Multiterminal Superconducting-Ferromagnetic Device

Physical review applied, 2018-09, Vol.10 (3), Article 034013

2018

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Enhancement of the supercurrent at a finite voltage in a sandwich-type ballistic SINIS junction

Physical review letters, 2007-03, Vol.98 (12), p.127002-127002, Article 127002

2007

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A superconducting transistorlike device having good input-output isolation

Applied physics letters, 2009-08, Vol.95 (5), p.052505-052505-3

Nevirkovets, I. P.

2009

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Fabrication and DC characteristics of vertically stacked SIS-type structures for use as low-temperature detectors

Superconductor science & technology, 1995-07, Vol.8 (7), p.575-578

Nevirkovets, I P

1995

Volltextzugriff (PDF)

Modeling Computer Memory Based on Ferromagnetic/Superconductor Multilayers

Physical review applied, 2019-06, Vol.11 (6), Article 064018

2019

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Transition from single junction to double junction behaviour in SISIS-type Nb-based devices

Physics letters. A, 1994-04, Vol.187 (1), p.119-126

1994

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Electrically controlled hybrid superconductor–ferromagnet cell for high density cryogenic memory

Josephson Oscillators Based on Amorphous Superconductors

Josephson junctions based on amorphous MoGe: prospects for use in superconducting electronics

Peculiar interference pattern of Josephson junctions involving periodic ferromagnet-normal metal structure

Significantly improved dehydrogenation of LiAlH4 catalysed with TiO2 nanopowder

Multi-Terminal Superconducting Nonequilibrium Device With a Ferromagnetic Screen

Direct study of the proximity effect in the normal layer inside of the stacked SINIS device

Control of Superconductivity in a Hybrid Superconducting/Ferromagnetic Multilayer Using Nonequilibrium Tunneling Injection

A superconducting transistor with improved isolation between the input and output terminals

Microwave absorption measurements of the heavy-fermion superconductor CeCoIn5

Characteristics of CeCoIn5/Al/AlOx/Nb and CeCoIn5/Al/AlOx/Al tunnel junctions

Fabrication and characteristics of multi-terminal SINIS devices

Hybrid superconductor–ferromagnet transistor-like device

A qubit device based on manipulations of Andreev bound states in double-barrier Josephson junctions

Observation of fractional vortices and π phases in Josephson junctions involving periodic magnetic layers

Current–voltage characteristics of Nb–carbon–Nb junctions

Anomalous critical current in double-barrier Nb/Al–AlOx–Al–AlOx–Nb devices

Damping and modal structure of patterned magnetic nanoarrays

Relaxation oscillations in asymmetric superconducting tunnel junctions and their potential application to the detection of high-energy particles

Memory Cell for High-Density Arrays Based on a Multiterminal Superconducting-Ferromagnetic Device

Enhancement of the supercurrent at a finite voltage in a sandwich-type ballistic SINIS junction

A superconducting transistorlike device having good input-output isolation

Fabrication and DC characteristics of vertically stacked SIS-type structures for use as low-temperature detectors

Modeling Computer Memory Based on Ferromagnetic/Superconductor Multilayers

Transition from single junction to double junction behaviour in SISIS-type Nb-based devices

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