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Quantum Oscillations of Magnetoresistance in HgCdTe/HgTe/HgCdTe Heterostructures with Inverted Band Spectrum

Physics of the solid state, 2022-03, Vol.64 (3), p.107-117

2022

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“Extremum Loop” Model for the Valence-Band Spectrum of a HgTe/HgCdTe Quantum Well with an Inverted Band Structure in the Semimetallic Phase

Semiconductors (Woodbury, N.Y.), 2018-11, Vol.52 (11), p.1403-1406

2018

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Erratum to: Nonuniversal Scaling Behavior of Conductivity Peak Widths in the Quantum Hall Effect in InGaAs/InAlAs Structures

Semiconductors (Woodbury, N.Y.), 2018-12, Vol.52 (15), p.1989-1989

2018

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Nontrivial topology of bulk HgSe from the study of cyclotron effective mass, electron mobility and phase shift of Shubnikov-de Haas oscillations

Journal of physics. Condensed matter, 2019-03, Vol.31 (11), p.115701-115701

2019

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Magnetoresistance of a HgTe/CdHgTe Double Quantum Well in an In-Plane Magnetic Field

JETP letters, 2023-12, Vol.118 (12), p.899-904

2023

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Contact Potential Difference in the Absence of a Current through a Sample in the Quantum Hall Effect Regime in InGaAs/InAlAs Heterostructure

Physics of metals and metallography, 2024-02, Vol.125 (2), p.137-141

2024

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Features of Magnetotransport in a HgTe/CdHgTe Double Quantum Well with an Intermediate Degree of Band Inversion

JETP letters, 2022-09, Vol.116 (6), p.385-393

2022

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Determination of the magnetocaloric effect from thermophysical parameters and their relationships near magnetic phase transition in doped manganites

Journal of magnetism and magnetic materials, 2020-11, Vol.513, p.167209, Article 167209

2020

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Unconventional reentrant quantum Hall effect in a HgTe/CdHgTe double quantum well

Physical review. B, 2020-10, Vol.102 (16), p.1, Article 165305

2020

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Effective Mass and g-Factor of Two-Dimentional HgTe Γ8-Band Electrons: Shubnikov-de Haas Oscillations

Semiconductors (Woodbury, N.Y.), 2020-08, Vol.54 (8), p.982-990

2020

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HgTe/CdHgTe double quantum well with a spectrum of bilayer graphene and peculiarities of its magnetotransport

JETP letters, 2016-09, Vol.104 (6), p.403-410

2016

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Nonuniversal Scaling Behavior of Conductivity Peak Widths in the Quantum Hall Effect in InGaAs/InAlAs Structures

Semiconductors (Woodbury, N.Y.), 2018-12, Vol.52 (12), p.1551-1558

2018

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Electron Effective Mass and g Factor in Wide HgTe Quantum Wells

Semiconductors (Woodbury, N.Y.), 2018-01, Vol.52 (1), p.12-18

2018

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Thermodynamic anomalous Hall effect in quantum oscillation regime in a semiconductor with low concentration of transition element impurities

Journal of magnetism and magnetic materials, 2017-10, Vol.440, p.2-4

2017

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Variable-Range Hopping Conductivity in Quantum Hall Regime for HgTe-Based Heterostructure

Journal of low temperature physics, 2016-12, Vol.185 (5-6), p.665-672

2016

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The temperature dependence of the conductivity peak values in the single and the double quantum well nanostructures n-InGaAs/GaAs after IR-illumination

Semiconductors (Woodbury, N.Y.), 2017-02, Vol.51 (2), p.272-278

2017

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Quantum Hall effect andnanoheterostructures hopping conductivity in n-InGaAs/InAlAs

Semiconductors (Woodbury, N.Y.), 2016-12, Vol.50 (12), p.1641-1646

2016

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The key role of a smooth impurity potential in formation of the hole spectrum for p-Ge/Ge1-xSix heterostructures in the quantum Hall regime

Nanotechnology, 2002-02, Vol.13 (1), p.86-93

2002

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Effect of impurity potential range on a scaling behavior in the quantum Hall regime

Physica. B, Condensed matter, 2009-12, Vol.404 (23-24), p.5192-5195

2009

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Peculiar behavior of magnetoresistance in HgSe single crystal with low electron concentration

Applied physics letters, 2018-02, Vol.112 (8)

2018

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Probing the p-Ge1-xSix/Ge/p-Ge1-xSix quantum well by means of the quantum Hall effect

Nanotechnology, 2000-12, Vol.11, p.351

2000

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Effect of exchange electron-electron interaction on conductivity of InGaAs single and double quantum wells

Physica. E, Low-dimensional systems & nanostructures, 2019-09, Vol.113, p.14-20

2019

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Effective Mass and g-Factor of Two-Dimentional HgTe [GAMMA].sub.8-Band Electrons: Shubnikov-de Haas Oscillations

Semiconductors (Woodbury, N.Y.), 2020-08, Vol.54 (8), p.982

2020

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Magnetic phase transitions and giant magnetoresistance in La1−xSmxMn2Si2 (0≤x≤1)

Journal of alloys and compounds, 2002-09, Vol.343 (1-2), p.14-25

2002

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Possible Superconductivity in TiSe2 Intercalated by Transition Metals

Journal of superconductivity and novel magnetism, 2006-02, Vol.19 (1-2), p.73-76

2006

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Quantum Oscillations of Magnetoresistance in HgCdTe/HgTe/HgCdTe Heterostructures with Inverted Band Spectrum

“Extremum Loop” Model for the Valence-Band Spectrum of a HgTe/HgCdTe Quantum Well with an Inverted Band Structure in the Semimetallic Phase

Erratum to: Nonuniversal Scaling Behavior of Conductivity Peak Widths in the Quantum Hall Effect in InGaAs/InAlAs Structures

Nontrivial topology of bulk HgSe from the study of cyclotron effective mass, electron mobility and phase shift of Shubnikov-de Haas oscillations

Magnetoresistance of a HgTe/CdHgTe Double Quantum Well in an In-Plane Magnetic Field

Contact Potential Difference in the Absence of a Current through a Sample in the Quantum Hall Effect Regime in InGaAs/InAlAs Heterostructure

Features of Magnetotransport in a HgTe/CdHgTe Double Quantum Well with an Intermediate Degree of Band Inversion

Determination of the magnetocaloric effect from thermophysical parameters and their relationships near magnetic phase transition in doped manganites

Unconventional reentrant quantum Hall effect in a HgTe/CdHgTe double quantum well

Effective Mass and g-Factor of Two-Dimentional HgTe Γ8-Band Electrons: Shubnikov-de Haas Oscillations

HgTe/CdHgTe double quantum well with a spectrum of bilayer graphene and peculiarities of its magnetotransport

Nonuniversal Scaling Behavior of Conductivity Peak Widths in the Quantum Hall Effect in InGaAs/InAlAs Structures

Electron Effective Mass and g Factor in Wide HgTe Quantum Wells

Thermodynamic anomalous Hall effect in quantum oscillation regime in a semiconductor with low concentration of transition element impurities

Variable-Range Hopping Conductivity in Quantum Hall Regime for HgTe-Based Heterostructure

The temperature dependence of the conductivity peak values in the single and the double quantum well nanostructures n-InGaAs/GaAs after IR-illumination

Quantum Hall effect andnanoheterostructures hopping conductivity in n-InGaAs/InAlAs

The key role of a smooth impurity potential in formation of the hole spectrum for p-Ge/Ge1-xSix heterostructures in the quantum Hall regime

Effect of impurity potential range on a scaling behavior in the quantum Hall regime

Peculiar behavior of magnetoresistance in HgSe single crystal with low electron concentration

Probing the p-Ge1-xSix/Ge/p-Ge1-xSix quantum well by means of the quantum Hall effect

Effect of exchange electron-electron interaction on conductivity of InGaAs single and double quantum wells

Effective Mass and g-Factor of Two-Dimentional HgTe [GAMMA].sub.8-Band Electrons: Shubnikov-de Haas Oscillations

Magnetic phase transitions and giant magnetoresistance in La1−xSmxMn2Si2 (0≤x≤1)

Possible Superconductivity in TiSe2 Intercalated by Transition Metals

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