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Investigation of single crystal 4H-SiC growth by the Solvent–Laser Heated Floating Zone technique

Journal of crystal growth, 2014-04, Vol.392, p.34-40

2014

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Nucleation of 3C-SiC associated with threading edge dislocations during chemical vapor deposition

Journal of crystal growth, 2012-05, Vol.347 (1), p.45-48

2012

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High-temperature electronics - a role for wide bandgap semiconductors?

Proceedings of the IEEE, 2002-06, Vol.90 (6), p.1065-1076

2002

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Performance limiting micropipe defects in silicon carbide wafers

IEEE electron device letters, 1994-02, Vol.15 (2), p.63-65

1994

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Possible formation mechanisms for surface defects observed in heteroepitaxially grown 3C-SiC

Physica status solidi. A, Applications and materials science, 2007-07, Vol.204 (7), p.2216-2221

2007

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Diffraction Contrast of Threading Dislocations in GaN and 4H-SiC Epitaxial Layers Using Electron Channeling Contrast Imaging

Journal of electronic materials, 2010-06, Vol.39 (6), p.743-746

2010

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Analysis of the temperature dependent thermal conductivity of silicon carbide for high temperature applications

Journal of applied physics, 2000-07, Vol.88 (1), p.265-269

2000

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Lowered dislocation densities in uniform GaN layers grown on step-free (0001) 4H-SiC mesa surfaces

Applied physics letters, 2005-01, Vol.86 (2), p.021902-021902-3

2005

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Chemical Analysis of Materials Exposed to Venus Temperature and Surface Atmosphere

Earth and space science (Hoboken, N.J.), 2018-07, Vol.5 (7), p.270-284

2018

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Polytype identification in heteroepitaxial 3C-SiC grown on 4H-SiC mesas using synchrotron white beam X-ray topography

Journal of crystal growth, 2002-04, Vol.240 (1), p.22-33

2002

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Electron channeling contrast imaging of atomic steps and threading dislocations in 4H-SiC

Applied physics letters, 2007-06, Vol.90 (23)

2007

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Nondestructive analysis of threading dislocations in GaN by electron channeling contrast imaging

Applied physics letters, 2007-08, Vol.91 (9), p.094106-094106-3

2007

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Step Free Surface Heteroepitaxy of 3C-SiC Layers on Patterned 4H/6H-SiC Mesas and Cantilevers

Materials science forum, 2004-06, Vol.457-460, p.169-174

2004

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Growth and characterization of 3C–SiC and 2H–AlN/GaN films and devices produced on step-free 4H–SiC mesa substrates

Journal of physics. D, Applied physics, 2007-10, Vol.40 (20), p.6139-6149

2007

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(Invited) High Temperature Wireless Smart Sensor Technology Based on Silicon Carbide Electronics

ECS transactions, 2014, Vol.61 (4), p.127-138

2014

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High Breakdown Field p-Type 3C-SiC Schottky Diodes Grown on Step-Free 4H-SiC Mesas

Materials science forum, 2004-01, Vol.457-460, p.1061-1064

2004

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Characterization of SiC Epitaxial Structures using High-Resolution X-Ray Diffraction Techniques

Materials science forum, 2004-01, Vol.457-460, p.157-162

2004

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Comparative Growth Behavior of 3C-SiC Mesa Heterofilms with and without Extended Defects

Materials science forum, 2004-01, Vol.457-460, p.261-264

2004

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Threading dislocation behavior in AlN nucleation layers for GaN growth on 4H-SiC

Applied physics letters, 2007-07, Vol.91 (1)

2007

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An Overview of High-Temperature Electronics and Sensor Development at NASA Glenn Research Center

Journal of turbomachinery, 2003-10, Vol.125 (4), p.658-664

2003

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Absence of Dislocation Motion in 3C-SiC pn Diodes under Forward Bias

Materials science forum, 2007-01, Vol.556-557, p.223-226

2007

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Characterization of hard- and soft-switching performance of high-voltage Si and 4H-SiC PiN diodes

IEEE transactions on electron devices, 2002-09, Vol.49 (9), p.1648-1656

2002

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Positive temperature coefficient of breakdown voltage in 4H-SiC pn junction rectifiers

IEEE electron device letters, 1997-03, Vol.18 (3), p.96-98

1997

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Wide Dynamic Range RF Mixers Using Wide-Bandgap Semiconductors

Materials science forum, 1998-01, Vol.264-268, p.913-916

1998

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Schottky Barriers for Pt, Mo and Ti on 6H and 4H SiC (0001), (000-1), (1-100) and (1-210) Faces Measured by I-V, C-V and Internal Photoemission

Materials science forum, 2003-09, Vol.433-436, p.705-708

2003

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Investigation of single crystal 4H-SiC growth by the Solvent–Laser Heated Floating Zone technique

Nucleation of 3C-SiC associated with threading edge dislocations during chemical vapor deposition

High-temperature electronics - a role for wide bandgap semiconductors?

Performance limiting micropipe defects in silicon carbide wafers

Possible formation mechanisms for surface defects observed in heteroepitaxially grown 3C-SiC

Diffraction Contrast of Threading Dislocations in GaN and 4H-SiC Epitaxial Layers Using Electron Channeling Contrast Imaging

Analysis of the temperature dependent thermal conductivity of silicon carbide for high temperature applications

Lowered dislocation densities in uniform GaN layers grown on step-free (0001) 4H-SiC mesa surfaces

Chemical Analysis of Materials Exposed to Venus Temperature and Surface Atmosphere

Polytype identification in heteroepitaxial 3C-SiC grown on 4H-SiC mesas using synchrotron white beam X-ray topography

Electron channeling contrast imaging of atomic steps and threading dislocations in 4H-SiC

Nondestructive analysis of threading dislocations in GaN by electron channeling contrast imaging

Step Free Surface Heteroepitaxy of 3C-SiC Layers on Patterned 4H/6H-SiC Mesas and Cantilevers

Growth and characterization of 3C–SiC and 2H–AlN/GaN films and devices produced on step-free 4H–SiC mesa substrates

(Invited) High Temperature Wireless Smart Sensor Technology Based on Silicon Carbide Electronics

High Breakdown Field p-Type 3C-SiC Schottky Diodes Grown on Step-Free 4H-SiC Mesas

Characterization of SiC Epitaxial Structures using High-Resolution X-Ray Diffraction Techniques

Comparative Growth Behavior of 3C-SiC Mesa Heterofilms with and without Extended Defects

Threading dislocation behavior in AlN nucleation layers for GaN growth on 4H-SiC

An Overview of High-Temperature Electronics and Sensor Development at NASA Glenn Research Center

Absence of Dislocation Motion in 3C-SiC pn Diodes under Forward Bias

Characterization of hard- and soft-switching performance of high-voltage Si and 4H-SiC PiN diodes

Positive temperature coefficient of breakdown voltage in 4H-SiC pn junction rectifiers

Wide Dynamic Range RF Mixers Using Wide-Bandgap Semiconductors

Schottky Barriers for Pt, Mo and Ti on 6H and 4H SiC (0001), (000-1), (1-100) and (1-210) Faces Measured by I-V, C-V and Internal Photoemission

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