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Origin of the parasitic luminescence of 235 nm UVC LEDs grown on different AlN templates

Applied physics letters, 2024-02, Vol.124 (6)

2024

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Status and Prospects of AlN Templates on Sapphire for Ultraviolet Light‐Emitting Diodes

Physica status solidi. A, Applications and materials science, 2020-07, Vol.217 (14), p.n/a

2020

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Performance Characteristics of UV-C AlGaN-Based Lasers Grown on Sapphire and Bulk AlN Substrates

IEEE photonics technology letters, 2014-02, Vol.26 (4), p.342-345

2014

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Indium incorporation and emission wavelength of polar, nonpolar and semipolar InGaN quantum wells

Semiconductor science and technology, 2012-02, Vol.27 (2), p.024014

2012

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Time-resolved photoluminescence from n-doped GaN/Al0.18Ga0.82N short-period superlattices probes carrier kinetics and long-term structural stability

Journal of applied physics, 2019-05, Vol.125 (18)

2019

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Improved performance of UVC-LEDs by combination of high-temperature annealing and epitaxially laterally overgrown AlN/sapphire

Photonics research (Washington, DC), 2020-04, Vol.8 (4), p.589

2020

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Temperature‐Dependent Charge Carrier Diffusion in [ 0001¯ ] Direction of GaN Determined by Luminescence Evaluation of Buried InGaN Quantum Wells

physica status solidi (b), 2020-06, Vol.257 (6), p.n/a

2020

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Improving AlN Crystal Quality and Strain Management on Nanopatterned Sapphire Substrates by High‐Temperature Annealing for UVC Light‐Emitting Diodes

Physica status solidi. A, Applications and materials science, 2020-04, Vol.217 (7), p.n/a

2020

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Temperature and doping dependent changes in surface recombination during UV illumination of (Al)GaN bulk layers

Journal of applied physics, 2016-09, Vol.120 (9)

2016

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Role of substrate quality on the performance of semipolar ( 11 2 ¯ 2 ) InGaN light-emitting diodes

Journal of applied physics, 2016-10, Vol.120 (13)

2016

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UV-C Lasing From AlGaN Multiple Quantum Wells on Different Types of AlN/Sapphire Templates

IEEE photonics technology letters, 2015-09, Vol.27 (18), p.1969-1972

2015

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Polarization of photoluminescence emission from semi-polar (11–22) AlGaN layers

Applied physics letters, 2014-02, Vol.104 (5)

2014

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Semipolar GaN grown on m-plane sapphire using MOVPE

Physica status solidi. C, 2008-05, Vol.5 (6), p.1815-1817

2008

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Quantum Efficiency Analysis of Near-Ultraviolet Emitting AlGaN and AlInGaN Structures

Japanese Journal of Applied Physics, 2013-08, Vol.52 (8), p.08JL14-08JL14-5

2013

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Temperature Dependence of Dark Spot Diameters in GaN and AlGaN

physica status solidi (b), 2021-11, Vol.258 (11), p.n/a

2021

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Spatial correlation of defect-selective etching and dark luminescence spots in Al x Ga1−x N

Semiconductor science and technology, 2024-07, Vol.39 (7)

2024

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Comparative study of buffer designs for high breakdown voltage AlGaNGaN HFETs

Physica status solidi. C, 2011-07, Vol.8 (7-8), p.2427-2429

2011

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Spatial correlation of defect-selective etching and dark luminescence spots in Al x Ga 1-x N

Semiconductor science and technology, 2024-05

2024

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High‐Temperature Annealing of Si‐Doped AlGaN

Physica status solidi. A, Applications and materials science, 2024-04, Vol.221 (7)

2024

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Gallium Phosphide Nanowires Grown on SiO 2 by Gas-Source Molecular Beam Epitaxy

Crystal growth & design, 2023-04, Vol.23 (4), p.2568-2575

2023

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Role of Oxygen Incorporation in High Temperature Annealed AlGaN

Physica status solidi. A, Applications and materials science, 2023-06, Vol.220 (11), p.n/a

2023

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High‐Temperature Annealing of AlGaN

Physica status solidi. A, Applications and materials science, 2020-12, Vol.217 (23), p.n/a

2020

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Gallium Phosphide Nanowires Grown on SiO2 by Gas-Source Molecular Beam Epitaxy

Crystal growth & design, 2023-04, Vol.23 (4), p.2568-2575

2023

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Selective Growth of GaP Crystals on CMOS-Compatible Si Nanotip Wafers by Gas Source Molecular Beam Epitaxy

Crystal growth & design, 2024-04, Vol.24 (7), p.2724-2733

2024

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Avoidance of instable photoluminescence intensity from AlGaN bulk layers

physica status solidi (b), 2017-08, Vol.254 (8), p.n/a

2017

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Origin of the parasitic luminescence of 235 nm UVC LEDs grown on different AlN templates

Status and Prospects of AlN Templates on Sapphire for Ultraviolet Light‐Emitting Diodes

Performance Characteristics of UV-C AlGaN-Based Lasers Grown on Sapphire and Bulk AlN Substrates

Indium incorporation and emission wavelength of polar, nonpolar and semipolar InGaN quantum wells

Time-resolved photoluminescence from n-doped GaN/Al0.18Ga0.82N short-period superlattices probes carrier kinetics and long-term structural stability

Improved performance of UVC-LEDs by combination of high-temperature annealing and epitaxially laterally overgrown AlN/sapphire

Temperature‐Dependent Charge Carrier Diffusion in [ 0001¯ ] Direction of GaN Determined by Luminescence Evaluation of Buried InGaN Quantum Wells

Improving AlN Crystal Quality and Strain Management on Nanopatterned Sapphire Substrates by High‐Temperature Annealing for UVC Light‐Emitting Diodes

Temperature and doping dependent changes in surface recombination during UV illumination of (Al)GaN bulk layers

Role of substrate quality on the performance of semipolar ( 11 2 ¯ 2 ) InGaN light-emitting diodes

UV-C Lasing From AlGaN Multiple Quantum Wells on Different Types of AlN/Sapphire Templates

Polarization of photoluminescence emission from semi-polar (11–22) AlGaN layers

Semipolar GaN grown on m-plane sapphire using MOVPE

Quantum Efficiency Analysis of Near-Ultraviolet Emitting AlGaN and AlInGaN Structures

Temperature Dependence of Dark Spot Diameters in GaN and AlGaN

Spatial correlation of defect-selective etching and dark luminescence spots in Al x Ga1−x N

Comparative study of buffer designs for high breakdown voltage AlGaNGaN HFETs

Spatial correlation of defect-selective etching and dark luminescence spots in Al x Ga 1-x N

High‐Temperature Annealing of Si‐Doped AlGaN

Gallium Phosphide Nanowires Grown on SiO 2 by Gas-Source Molecular Beam Epitaxy

Role of Oxygen Incorporation in High Temperature Annealed AlGaN

High‐Temperature Annealing of AlGaN

Gallium Phosphide Nanowires Grown on SiO2 by Gas-Source Molecular Beam Epitaxy

Selective Growth of GaP Crystals on CMOS-Compatible Si Nanotip Wafers by Gas Source Molecular Beam Epitaxy

Avoidance of instable photoluminescence intensity from AlGaN bulk layers

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