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Capacitance–voltage characteristics of metal–insulator–semiconductor structures based on graded-gap HgCdTe with various insulators

Thin solid films, 2012-11, Vol.522, p.261-266

2012

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Unipolar Semiconductor Barrier Structures for Infrared Photodetector Arrays (Review)

Journal of communications technology & electronics, 2021-09, Vol.66 (9), p.1084-1091

2021

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Diffusion Limitation of Dark Current in the nBn Structures Based on the MBE HgCdTe

Journal of communications technology & electronics, 2022-03, Vol.67 (3), p.308-312

2022

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Admittance studies of modification of HgCdTe surface properties with ion implantation and thermal annealing

Surface & coatings technology, 2020-06, Vol.392, p.1-5, Article 125760

2020

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Capacitive Properties of Metal–Insulator–Semiconductor Systems Based on an HgCdTe nBn Structure Grown by Molecular Beam Epitaxy

Journal of communications technology & electronics, 2019-03, Vol.64 (3), p.289-293

2019

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Influence of the Compositional Grading on Concentration of Majority Charge Carriers in Near-Surface Layers of n(p)-HgCdTe Grown by Molecular Beam Epitaxy

Journal of electronic materials, 2018-05, Vol.47 (5), p.2694-2702

2018

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An Experimental Study of the Dynamic Resistance in Surface Leakage Limited nBn Structures Based on HgCdTe Grown by Molecular Beam Epitaxy

Journal of electronic materials, 2021-08, Vol.50 (8), p.4599-4605

2021

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Diffusion-limited dark currents in mid-wave infrared HgCdTe-based nBn structures with Al2O3 passivation

Journal of physics. D, Applied physics, 2020, Vol.53 (5)

2020

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Admittance of metal-insulator-semiconductor devices based on HgCdTe nBn structures

Semiconductor science and technology, 2020-05, Vol.35 (5), p.55026

2020

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Investigation of the Effect of Thermal Annealing on the Electrical Properties of the Near-Surface Layer of MBE n-HgCdTe Using MIS Techniques

Journal of electronic materials, 2020-05, Vol.49 (5), p.3202-3208

2020

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Influence of As+ Ion Implantation on Properties of MBE HgCdTe Near-Surface Layer Characterized by Metal–Insulator–Semiconductor Techniques

Journal of electronic materials, 2021-04, Vol.50 (4), p.2323-2330

2021

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Photoelectrical characteristics of metal–insulator–semiconductor structures based on graded-gap HgCdTe grown by molecular-beam epitaxy

Thin solid films, 2014-01, Vol.551, p.92-97

2014

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Electrical and microscopic characterization of p+-type layers formed in HgCdTe by arsenic implantation

Semiconductor science and technology, 2020-11, Vol.35 (11), p.115019

2020

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Admittance of MIS Structures Based on nBn Systems of Epitaxial HgCdTe for Detection in the 3–5 μm Spectral Range

Technical physics letters, 2021-09, Vol.47 (9), p.629-632

2021

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Admittance of Pentacene- Based Mis-Structures with Two-Layer Insulator SiO2–Al2O3

Russian physics journal, 2021-11, Vol.64 (7), p.1281-1288

2021

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Hall-effect studies of modification of HgCdTe surface properties with ion implantation and thermal annealing

Surface & coatings technology, 2020-07, Vol.393, p.125721, Article 125721

2020

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Dark Currents of Unipolar Barrier Structures Based on Mercury Cadmium Telluride for Long-Wave IR Detectors

Russian physics journal, 2021-09, Vol.64 (5), p.763-769

2021

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Admittance of barrier nanostructures based on MBE HgCdTe

Applied nanoscience, 2022-03, Vol.12 (3), p.403-409

2022

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Peculiarities of Modeling the Frequency Dependences of Admittance of MIS Structure Based on Organic P3HT Film with an Insulator Al2O3 Layer

Russian physics journal, 2019-03, Vol.61 (11), p.2126-2134

2019

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The Effect of As+ Ion Implantation and Annealing on the Electrical Properties of Near-Surface Layers in Graded-Gap n-Hg0.78Cd0.22Te Films

Technical physics letters, 2021-02, Vol.47 (2), p.189-192

2021

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Investigation of the Differential Resistance of MIS Structures Based on n-Hg0.78Cd0.22Te with Near-Surface Graded-Gap Layers

Journal of communications technology & electronics, 2021-03, Vol.66 (3), p.337-339

2021

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Some properties of near-surface layer of graded-gap MBE HgCdTe after boron ion implantation

Journal of physics. Conference series, 2017-05, Vol.830 (1), p.12081

2017

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Admittance dependences of the mid-wave infrared barrier structure based on HgCdTe grown by molecular beam epitaxy

Materials research express, 2019-09, Vol.6 (11), p.116411

2019

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Impedance of MIS Devices Based on nBn Structures from Mercury Cadmium Telluride

Russian physics journal, 2020-10, Vol.63 (6), p.907-916

2020

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Admittance of Barrier Structures Based on Mercury Cadmium Telluride

Russian physics journal, 2020-07, Vol.63 (3), p.432-445

2020

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Capacitance–voltage characteristics of metal–insulator–semiconductor structures based on graded-gap HgCdTe with various insulators

Unipolar Semiconductor Barrier Structures for Infrared Photodetector Arrays (Review)

Diffusion Limitation of Dark Current in the nBn Structures Based on the MBE HgCdTe

Admittance studies of modification of HgCdTe surface properties with ion implantation and thermal annealing

Capacitive Properties of Metal–Insulator–Semiconductor Systems Based on an HgCdTe nBn Structure Grown by Molecular Beam Epitaxy

Influence of the Compositional Grading on Concentration of Majority Charge Carriers in Near-Surface Layers of n(p)-HgCdTe Grown by Molecular Beam Epitaxy

An Experimental Study of the Dynamic Resistance in Surface Leakage Limited nBn Structures Based on HgCdTe Grown by Molecular Beam Epitaxy

Diffusion-limited dark currents in mid-wave infrared HgCdTe-based nBn structures with Al2O3 passivation

Admittance of metal-insulator-semiconductor devices based on HgCdTe nBn structures

Investigation of the Effect of Thermal Annealing on the Electrical Properties of the Near-Surface Layer of MBE n-HgCdTe Using MIS Techniques

Influence of As+ Ion Implantation on Properties of MBE HgCdTe Near-Surface Layer Characterized by Metal–Insulator–Semiconductor Techniques

Photoelectrical characteristics of metal–insulator–semiconductor structures based on graded-gap HgCdTe grown by molecular-beam epitaxy

Electrical and microscopic characterization of p+-type layers formed in HgCdTe by arsenic implantation

Admittance of MIS Structures Based on nBn Systems of Epitaxial HgCdTe for Detection in the 3–5 μm Spectral Range

Admittance of Pentacene- Based Mis-Structures with Two-Layer Insulator SiO2–Al2O3

Hall-effect studies of modification of HgCdTe surface properties with ion implantation and thermal annealing

Dark Currents of Unipolar Barrier Structures Based on Mercury Cadmium Telluride for Long-Wave IR Detectors

Admittance of barrier nanostructures based on MBE HgCdTe

Peculiarities of Modeling the Frequency Dependences of Admittance of MIS Structure Based on Organic P3HT Film with an Insulator Al2O3 Layer

The Effect of As+ Ion Implantation and Annealing on the Electrical Properties of Near-Surface Layers in Graded-Gap n-Hg0.78Cd0.22Te Films

Investigation of the Differential Resistance of MIS Structures Based on n-Hg0.78Cd0.22Te with Near-Surface Graded-Gap Layers

Some properties of near-surface layer of graded-gap MBE HgCdTe after boron ion implantation

Admittance dependences of the mid-wave infrared barrier structure based on HgCdTe grown by molecular beam epitaxy

Impedance of MIS Devices Based on nBn Structures from Mercury Cadmium Telluride

Admittance of Barrier Structures Based on Mercury Cadmium Telluride

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