UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

AlGaN/GaN-based biosensor for label-free detection of biological activity

Sensors and actuators. B, Chemical, 2013-02, Vol.177, p.577-582

2013

Volltextzugriff (PDF)

The influence of the Franz-Keldysh effect on the electron diffusion length in p-type GaN determined using the spectral photocurrent technique

Journal of applied physics, 2012-08, Vol.112 (4)

2012

Volltextzugriff (PDF)

Low resistivity contacts to plasma etched Mg-doped GaN using very low power inductively coupled plasma etching

Thin solid films, 2011-03, Vol.519 (11), p.3686-3689

2011

Volltextzugriff (PDF)

Electrically Active Defects in GaN Layers Grown With and Without Fe-doped Buffers by Metal-organic Chemical Vapor Deposition

Journal of electronic materials, 2008-05, Vol.37 (5), p.569-572

2008

Volltextzugriff (PDF)

A physical large-signal model for GaN HEMTS including self-heating and trap-related dispersion

Microelectronics and reliability, 2011-02, Vol.51 (2), p.229-234

2011

Volltextzugriff (PDF)

Mobility spectrum analysis of anisotropic electron transport in N-polar GaN/AlGaN heterostructures on vicinal sapphire substrates

Microelectronic engineering, 2011-07, Vol.88 (7), p.1079-1082

2011

Volltextzugriff (PDF)

Study of Pd/Au metallisation and surface characteristics on Mg-doped GaN induced by low power inductively coupled plasma etching

Optical materials, 2010-04, Vol.32 (6), p.700-702

2010

Volltextzugriff (PDF)

Low contact resistance to plasma-etched p-type GaN

Electronics letters, 2011-03, Vol.47 (5), p.342-343

2011

Volltextzugriff (PDF)

Investigation of the extraction of short diffusion lengths from simulated electron-beam induced current

Physica status solidi. C, 2010-10, Vol.7 (10), p.2566-2569

2010

Volltextzugriff (PDF)

Contribution of hole trap to persistent photoconductivity in n -type GaN

Journal of applied physics, 2004-07, Vol.96 (2), p.1019-1023

2004

Volltextzugriff (PDF)

Localised defect-induced Schottky barrier lowering in n-GaN Schottky diodes

Solid-state electronics, 2008-02, Vol.52 (2), p.171-174

2008

Volltextzugriff (PDF)

Investigation of the accuracy of the spectral photocurrent method for the determination of minority carrier diffusion length

Journal of applied physics, 2012-04, Vol.111 (7), p.074503-074503-7

2012

Volltextzugriff (PDF)

Surface-layer damage and responsivity in sputtered-ITO/p-GaN Schottky-barrier photodiodes

Solid-state electronics, 2005-12, Vol.49 (12), p.1969-1973

2005

Volltextzugriff (PDF)

Magnetotransport in AlGaN/GaN and AlGaN/AlN/GaN heterostructures

Physica Status Solidi (b), 2007-06, Vol.244 (6), p.1877-1881

2007

Volltextzugriff (PDF)

HgCdTe mid-wavelength IR photovoltaic detectors fabricated using plasma induced junction technology

Journal of electronic materials, 2000-06, Vol.29 (6), p.841-848

2000

Volltextzugriff (PDF)

Electron-beam induced current measurements of diffusion length in Si doped MOCVD grown GaN

2010 Conference on Optoelectronic and Microelectronic Materials and Devices, 2010, p.201-202

2010

Volltextzugriff (PDF)

Scanning Ion Probe Studies of Silicon Implantation Profiles in AlGaN/GaN HEMT Heterostructures

Journal of electronic materials, 2008-05, Vol.37 (5), p.554-557

2008

Volltextzugriff (PDF)

Characterization of Non-Alloyed Ohmic Contacts to Si-Implanted AlGaN/GaN Heterostructures for High-Electron Mobility Transistors

Journal of electronic materials, 2007-09, Vol.36 (9), p.1156-1159

2007

Volltextzugriff (PDF)

Optical quenching of photoconductivity in undoped n -GaN

Journal of applied physics, 2004-02, Vol.95 (3), p.1081-1088

2004

Volltextzugriff (PDF)

Effect of very low power inductively coupled plasma etching on ohmic contacts to p-GaN

2010 Conference on Optoelectronic and Microelectronic Materials and Devices, 2010, p.145-146

2010

Volltextzugriff (PDF)

Annealing of C60o gamma radiation-induced damage in n-GaN Schottky barrier diodes

Journal of applied physics, 2007-03, Vol.101 (5)

2007

Volltextzugriff (PDF)

GaN vertical n-p junctions prepared by Si ion implantation

Physica status solidi. C, 2008-05, Vol.5 (6), p.1938-1940

2008

Volltextzugriff (PDF)

Anisotropic two-dimensional electron gas transport in N-polar GaN/AlGaN heterostructures grown on vicinal substrates

2010 Conference on Optoelectronic and Microelectronic Materials and Devices, 2010, p.195-196

2010

Volltextzugriff (PDF)

Wavelet analysis of low altitude infrared transmission in the coastal environment

Infrared physics & technology, 1999, Vol.40 (5), p.399-409

1999

Volltextzugriff (PDF)

Ion sensitive AlGaN/GaN heterostructures for cell-based biosensor development

2010 Conference on Optoelectronic and Microelectronic Materials and Devices, 2010, p.137-138

2010

Volltextzugriff (PDF)

1 – 25 von 104

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(75)
Mit Volltextzugriff
(98)

Publikationsform

Sprache

Englisch
(103)
Japanisch
(1)

Erscheinungsjahr

n.n

Thema

Science & Technology
(66)
Physical Sciences
(61)
Technology
(49)
Physics
(46)
Engineering
(41)
Engineering, Electrical & Electronic
(40)
Physics, Applied
(33)
Exact Sciences And Technology
(28)
Gallium Nitride
(22)
Materials Science
(22)
Optics
(22)
Materials Science, Multidisciplinary
(19)
Applied Sciences
(18)
Electronics
(18)
Semiconductor Electronics. Microelectronics. Optoelectronics. Solid State Devices
(16)
Physics, Condensed Matter
(11)
Aluminum Gallium Nitride
(10)
Gallium Nitrides
(10)
Nanoscience & Nanotechnology
(10)
Science & Technology - Other Topics
(10)

15 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

AlGaN/GaN-based biosensor for label-free detection of biological activity

The influence of the Franz-Keldysh effect on the electron diffusion length in p-type GaN determined using the spectral photocurrent technique

Low resistivity contacts to plasma etched Mg-doped GaN using very low power inductively coupled plasma etching

Electrically Active Defects in GaN Layers Grown With and Without Fe-doped Buffers by Metal-organic Chemical Vapor Deposition

A physical large-signal model for GaN HEMTS including self-heating and trap-related dispersion

Mobility spectrum analysis of anisotropic electron transport in N-polar GaN/AlGaN heterostructures on vicinal sapphire substrates

Study of Pd/Au metallisation and surface characteristics on Mg-doped GaN induced by low power inductively coupled plasma etching

Low contact resistance to plasma-etched p-type GaN

Investigation of the extraction of short diffusion lengths from simulated electron-beam induced current

Contribution of hole trap to persistent photoconductivity in n -type GaN

Localised defect-induced Schottky barrier lowering in n-GaN Schottky diodes

Investigation of the accuracy of the spectral photocurrent method for the determination of minority carrier diffusion length

Surface-layer damage and responsivity in sputtered-ITO/p-GaN Schottky-barrier photodiodes

Magnetotransport in AlGaN/GaN and AlGaN/AlN/GaN heterostructures

HgCdTe mid-wavelength IR photovoltaic detectors fabricated using plasma induced junction technology

Electron-beam induced current measurements of diffusion length in Si doped MOCVD grown GaN

Scanning Ion Probe Studies of Silicon Implantation Profiles in AlGaN/GaN HEMT Heterostructures

Characterization of Non-Alloyed Ohmic Contacts to Si-Implanted AlGaN/GaN Heterostructures for High-Electron Mobility Transistors

Optical quenching of photoconductivity in undoped n -GaN

Effect of very low power inductively coupled plasma etching on ohmic contacts to p-GaN

Annealing of C60o gamma radiation-induced damage in n-GaN Schottky barrier diodes

GaN vertical n-p junctions prepared by Si ion implantation

Anisotropic two-dimensional electron gas transport in N-polar GaN/AlGaN heterostructures grown on vicinal substrates

Wavelet analysis of low altitude infrared transmission in the coastal environment

Ion sensitive AlGaN/GaN heterostructures for cell-based biosensor development

Suchergebnisse filtern