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Theoretical tools for the description of charge transport in disordered organic semiconductors

Journal of physics. Condensed matter, 2015-03, Vol.27 (9), p.093201-093201

2015

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Calculating the Efficiency of Exciton Dissociation at the Interface between a Conjugated Polymer and an Electron Acceptor

The journal of physical chemistry letters, 2012-05, Vol.3 (9), p.1214-1221

2012

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FUSION OF THE OPTICAL AND RADAR IMAGES OF THE LAND SURFACE IN MULTI-POSITION ON-BOARD SYSTEMS FOR OPERATIONAL MONITORING

International archives of the photogrammetry, remote sensing and spatial information sciences., 2021, Vol.XLIV-2/W1-2021, p.107-111

2021

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Advanced percolation solution for hopping conductivity

Physical review. B, Condensed matter and materials physics, 2013-06, Vol.87 (23), Article 235204

2013

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Luminescence of Spatially Ordered Self-Assembled Solitary Ge(Si) Nanoislands and their Groups Incorporated into Photonic Crystals

Semiconductors (Woodbury, N.Y.), 2020-08, Vol.54 (8), p.853-859

2020

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Formation of InAs/GaP Quantum-Well Heterostructures on Silicon Substrates by Molecular-Beam Epitaxy

Semiconductors (Woodbury, N.Y.), 2021-02, Vol.55 (2), p.194-201

2021

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Nucleation of Three-Dimensional Ge Islands on a Patterned Si(100) Surface

Semiconductors (Woodbury, N.Y.), 2018-11, Vol.52 (11), p.1457-1461

2018

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Fundamental characteristic length scale for the field dependence of hopping charge transport in disordered organic semiconductors

Physical review. B, 2017-07, Vol.96 (3), Article 035204

2017

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Atomic and energy structure of InAs/AlAs quantum dots

Physical review. B, Condensed matter and materials physics, 2008-08, Vol.78 (8), Article 085323

2008

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Spin dynamics in SiGe quantum dot lines and ring molecules

Physical review. B, 2016-04, Vol.93 (15), Article 155305

2016

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On the Feasibility of Transition to Electric Vehicles

Power technology and engineering, 2024, Vol.58 (1), p.155-162

2024

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Photoluminescence of compact GeSi quantum dot groups with increased probability of finding an electron in Ge

Scientific reports, 2020-06, Vol.10 (1), p.9308-9308, Article 9308

2020

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Percolation description of charge transport in the random barrier model applied to amorphous oxide semiconductors

Europhysics letters, 2019-09, Vol.127 (5), p.57004

2019

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Quantum probabilities from combination of Zurekʼs envariance and Gleasonʼs theorem

Physica scripta, 2014-12, Vol.T163 (1), p.14033

Nenashev, A V

2014

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On the efficiency of exciton dissociation at the interface between a conjugated polymer and an electron acceptor

Applied physics letters, 2011-07, Vol.99 (1), p.013302-013302-3

2011

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Electron Spin Resonance in Heterostructures with Ring Molecules of GeSi Quantum Dots

JETP letters, 2021, Vol.113 (1), p.52-56

2021

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Analytical Expression for the Distribution of Elastic Strain Created by a Polyhedral Inclusion with Arbitrary Eigenstrain

Physics of the solid state, 2018-09, Vol.60 (9), p.1807-1812

2018

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Energy position of the transport path in disordered organic semiconductors

Journal of physics. Condensed matter, 2014-06, Vol.26 (25), p.255801-255801

2014

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Comment on “Charge transport in disordered semiconducting polymers driven by nuclear tunneling”

Physical review. B, 2020-08, Vol.102 (6), p.1, Article 066201

2020

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Hall effect in hopping conduction in an ensemble of quantum dots

JETP letters, 2017-09, Vol.106 (5), p.308-312

2017

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Electronic structure of Ge/Si quantum dots

Nanotechnology, 2002-02, Vol.13 (1), p.75-80

2002

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Self-Organization of Ge(Si) Nanoisland Groups on Pit-Patterned Si(100) Substrates

Semiconductors (Woodbury, N.Y.), 2020-12, Vol.54 (14), p.1866-1868

2020

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Photoluminescence enhancement in double Ge/Si quantum dot structures

JETP letters, 2016-12, Vol.104 (12), p.823-826

2016

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Electron spatial localization tuned by strain in Ge/Si quantum dot heterostructures

Physical review. B, 2019-03, Vol.99 (11), Article 115314

2019

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Selective oxidation of poly-Si with embedded Ge nanocrystals in Si/SiO2/Ge(NCs)/poly-Si structure for memory device fabrication

Semiconductor science and technology, 2009-02, Vol.24 (2), p.025015-025015 (4)

2009

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Theoretical tools for the description of charge transport in disordered organic semiconductors

Calculating the Efficiency of Exciton Dissociation at the Interface between a Conjugated Polymer and an Electron Acceptor

FUSION OF THE OPTICAL AND RADAR IMAGES OF THE LAND SURFACE IN MULTI-POSITION ON-BOARD SYSTEMS FOR OPERATIONAL MONITORING

Advanced percolation solution for hopping conductivity

Luminescence of Spatially Ordered Self-Assembled Solitary Ge(Si) Nanoislands and their Groups Incorporated into Photonic Crystals

Formation of InAs/GaP Quantum-Well Heterostructures on Silicon Substrates by Molecular-Beam Epitaxy

Nucleation of Three-Dimensional Ge Islands on a Patterned Si(100) Surface

Fundamental characteristic length scale for the field dependence of hopping charge transport in disordered organic semiconductors

Atomic and energy structure of InAs/AlAs quantum dots

Spin dynamics in SiGe quantum dot lines and ring molecules

On the Feasibility of Transition to Electric Vehicles

Photoluminescence of compact GeSi quantum dot groups with increased probability of finding an electron in Ge

Percolation description of charge transport in the random barrier model applied to amorphous oxide semiconductors

Quantum probabilities from combination of Zurekʼs envariance and Gleasonʼs theorem

On the efficiency of exciton dissociation at the interface between a conjugated polymer and an electron acceptor

Electron Spin Resonance in Heterostructures with Ring Molecules of GeSi Quantum Dots

Analytical Expression for the Distribution of Elastic Strain Created by a Polyhedral Inclusion with Arbitrary Eigenstrain

Energy position of the transport path in disordered organic semiconductors

Comment on “Charge transport in disordered semiconducting polymers driven by nuclear tunneling”

Hall effect in hopping conduction in an ensemble of quantum dots

Electronic structure of Ge/Si quantum dots

Self-Organization of Ge(Si) Nanoisland Groups on Pit-Patterned Si(100) Substrates

Photoluminescence enhancement in double Ge/Si quantum dot structures

Electron spatial localization tuned by strain in Ge/Si quantum dot heterostructures

Selective oxidation of poly-Si with embedded Ge nanocrystals in Si/SiO2/Ge(NCs)/poly-Si structure for memory device fabrication

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