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Superconductivity in laser-annealed monocrystalline silicon films: The role of boron implant

Applied physics letters, 2023-09, Vol.123 (13)

2023

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Influence of substrate-induced thermal stress on the superconducting properties of V3Si thin films

Journal of applied physics, 2021-03, Vol.129 (10)

2021

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Impact of Pt on the phase formation sequence, morphology, and electrical properties of Ni(Pt)/Ge0.9Sn0.1 system during solid-state reaction

Journal of applied physics, 2018-08, Vol.124 (8)

2018

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Integration, BEOL, and Thermal Stress Impact on CMOS-Compatible Titanium-Based Contacts for III-V Devices on a 300-mm Platform

IEEE transactions on electron devices, 2020-06, Vol.67 (6), p.2495-2502

2020

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Phase formation sequence in the Ti/InP system during thin film solid-state reactions

Journal of applied physics, 2017-06, Vol.121 (24)

2017

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Influence of dual Ge/C pre-amorphization implantation on the Ni1−xPtxSi phase nucleation and growth mechanisms

Microelectronic engineering, 2021-05, Vol.244-246, p.1, Article 111571

2021

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Thermal stability of Ni1−uPtu (0 < u < 0.15) germanosilicide

Journal of applied physics, 2017-04, Vol.121 (13)

2017

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Superconducting V3Si for quantum circuit applications

Microelectronic engineering, 2021-05, Vol.244-246, p.111570, Article 111570

2021

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Formation of Ni3InGaAs phase in Ni/InGaAs contact at low temperature

Applied physics letters, 2016-09, Vol.109 (13)

2016

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Redistribution of phosphorus during NiPtSi formation on in-situ doped Si

Microelectronic engineering, 2018-12, Vol.202, p.25-30

2018

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Advanced characterizations of fluorine-free tungsten film and its application as low resistance liner for PCRAM

Materials science in semiconductor processing, 2017-11, Vol.71, p.433-440

2017

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Differential scanning calorimetry analysis of the linear parabolic growth of nanometric Ni silicide thin films on a Si substrate

Applied physics letters, 2005-01, Vol.86 (4), p.041903-041903-3

2005

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FDSOI bottom MOSFETs stability versus top transistor thermal budget featuring 3D monolithic integration

Solid-state electronics, 2015-11, Vol.113, p.2-8

2015

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Kinetics study of NiPt(10 at.%)/Si0.7Ge0.3 solid state reactions

Microelectronic engineering, 2014-05, Vol.120, p.163-167

2014

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Considerations for efficient contact resistivity reduction via Fermi Level depinning - impact of MIS contacts on 10nm node nMOSFET DC characteristics

2015 Symposium on VLSI Technology (VLSI Technology), 2015, p.T116-T117

2015

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IEEE_Xplore

Nickel silicides and germanides: Phases formation, kinetics and thermal expansion

Materials science & engineering. B, Solid-state materials for advanced technology, 2008-12, Vol.154, p.163-167

2008

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A comparative study of nickel silicides and nickel germanides: Phase formation and kinetics

Microelectronic engineering, 2006-11, Vol.83 (11), p.2101-2106

2006

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Anisotropy of the thermal expansion of the Ni ( Si 1 − x Ge x ) phases investigated by high-temperature x-ray diffraction

Journal of applied physics, 2007-04, Vol.101 (7), p.073512-073512-7

2007

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Superconductivity in laser-annealed monocrystalline silicon films: The role of boron implant

Applied physics letters, 2023-09, Vol.123 (13)

2023

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A comparative study of C, N and Xe pre-amorphization implantation processes for improving the thermal stability of NiSi films

Microelectronic engineering, 2024-08, Vol.291, p.112210, Article 112210

2024

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Formation of NiGe through germanium oxide on Ge(001) substrate

Microelectronic engineering, 2013-07, Vol.107, p.178-183

2013

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High mobility CMOS: First demonstration of planar GeOI p-FETs with SOI n-FETs

Solid-state electronics, 2011-05, Vol.59 (1), p.2-7

2011

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Multigate MOSFET in a Bulk Technology by Integrating Polysilicon-Filled Trenches

IEEE electron device letters, 2009-12, Vol.30 (12), p.1350-1352

2009

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IEEE_Xplore

Self-Aligned Planar Double-Gate MOSFETs by Bonding for 22-nm Node, With Metal Gates, High- \kappa Dielectrics, and Metallic Source/Drain

IEEE electron device letters, 2009-07, Vol.30 (7), p.748-750

2009

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IEEE_Xplore

Influence of dual Ge/C pre-amorphization implantation on the Ni1−Pt Si phase nucleation and growth mechanisms

Microelectronic engineering, 2021-05, Vol.244-246, p.111571, Article 111571

2021

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Superconductivity in laser-annealed monocrystalline silicon films: The role of boron implant

Influence of substrate-induced thermal stress on the superconducting properties of V3Si thin films

Impact of Pt on the phase formation sequence, morphology, and electrical properties of Ni(Pt)/Ge0.9Sn0.1 system during solid-state reaction

Integration, BEOL, and Thermal Stress Impact on CMOS-Compatible Titanium-Based Contacts for III-V Devices on a 300-mm Platform

Phase formation sequence in the Ti/InP system during thin film solid-state reactions

Influence of dual Ge/C pre-amorphization implantation on the Ni1−xPtxSi phase nucleation and growth mechanisms

Thermal stability of Ni1−uPtu (0 < u < 0.15) germanosilicide

Superconducting V3Si for quantum circuit applications

Formation of Ni3InGaAs phase in Ni/InGaAs contact at low temperature

Redistribution of phosphorus during NiPtSi formation on in-situ doped Si

Advanced characterizations of fluorine-free tungsten film and its application as low resistance liner for PCRAM

Differential scanning calorimetry analysis of the linear parabolic growth of nanometric Ni silicide thin films on a Si substrate

FDSOI bottom MOSFETs stability versus top transistor thermal budget featuring 3D monolithic integration

Kinetics study of NiPt(10 at.%)/Si0.7Ge0.3 solid state reactions

Considerations for efficient contact resistivity reduction via Fermi Level depinning - impact of MIS contacts on 10nm node nMOSFET DC characteristics

Nickel silicides and germanides: Phases formation, kinetics and thermal expansion

A comparative study of nickel silicides and nickel germanides: Phase formation and kinetics

Anisotropy of the thermal expansion of the Ni ( Si 1 − x Ge x ) phases investigated by high-temperature x-ray diffraction

Superconductivity in laser-annealed monocrystalline silicon films: The role of boron implant

A comparative study of C, N and Xe pre-amorphization implantation processes for improving the thermal stability of NiSi films

Formation of NiGe through germanium oxide on Ge(001) substrate

High mobility CMOS: First demonstration of planar GeOI p-FETs with SOI n-FETs

Multigate MOSFET in a Bulk Technology by Integrating Polysilicon-Filled Trenches

Self-Aligned Planar Double-Gate MOSFETs by Bonding for 22-nm Node, With Metal Gates, High- \kappa Dielectrics, and Metallic Source/Drain

Influence of dual Ge/C pre-amorphization implantation on the Ni1−Pt Si phase nucleation and growth mechanisms

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