UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

GaN-based power devices: Physics, reliability, and perspectives

Journal of applied physics, 2021-11, Vol.130 (18)

2021

Volltextzugriff (PDF)

A perspective on multi-channel technology for the next-generation of GaN power devices

Applied physics letters, 2022-05, Vol.120 (19)

2022

Volltextzugriff (PDF)

p-GaN field plate for low leakage current in lateral GaN Schottky barrier diodes

Applied physics letters, 2021-12, Vol.119 (26)

2021

Volltextzugriff (PDF)

Impact of Embedded Liquid Cooling on the Electrical Characteristics of GaN-on-Si Power Transistors

IEEE electron device letters, 2021-11, Vol.42 (11), p.1642-1645

2021

Volltextzugriff (PDF)

Figures-of-Merit of Lateral GaN Power Devices: Modeling and Comparison of HEMTs and PSJs

IEEE journal of the Electron Devices Society, 2021, Vol.9, p.1066-1075

2021

Volltextzugriff (PDF)

Scalable Nanostructured Carbon Electrode Arrays for Enhanced Dopamine Detection

ACS sensors, 2018-04, Vol.3 (4), p.799-805

2018

Volltextzugriff (PDF)

Co-designing electronics with microfluidics for more sustainable cooling

Nature (London), 2020-09, Vol.585 (7824), p.211-216

2020

Volltextzugriff (PDF)

Performance of GaN Power Devices for Cryogenic Applications Down to 4.2 K

IEEE transactions on power electronics, 2021-07, Vol.36 (7), p.7412-7416

2021

Volltextzugriff (PDF)

Large-Area High-Performance Flexible Pressure Sensor with Carbon Nanotube Active Matrix for Electronic Skin

Nano letters, 2018-03, Vol.18 (3), p.2054-2059

2018

Volltextzugriff (PDF)

High-Performance Nanowire-Based E-Mode Power GaN MOSHEMTs With Large Work-Function Gate Metal

IEEE electron device letters, 2019-03, Vol.40 (3), p.439-442

2019

Volltextzugriff (PDF)

Fast-Switching Tri-Anode Schottky Barrier Diodes for Monolithically Integrated GaN-on-Si Power Circuits

IEEE electron device letters, 2020-01, Vol.41 (1), p.99-102

2020

Volltextzugriff (PDF)

Stable enhancement-mode operation in GaN transistor based on LiNiO junction tri-gate

Applied physics letters, 2022-08, Vol.121 (5)

2022

Volltextzugriff (PDF)

Stable enhancement-mode operation in GaN transistor based on LiNiO junctiontri-gate

Applied physics letters, 2022-08, Vol.121 (5)

2022

Volltextzugriff (PDF)

Enhancement-Mode Multi-Channel AlGaN/GaN Transistors With LiNiO Junction Tri-Gate

IEEE electron device letters, 2022-09, Vol.43 (9), p.1523-1526

2022

Volltextzugriff (PDF)

Ultra-compact, High-Frequency Power Integrated Circuits Based on GaN-on-Si Schottky Barrier Diodes

IEEE transactions on power electronics, 2021-02, Vol.36 (2), p.1269-1273

2021

Volltextzugriff (PDF)

High-Voltage Normally-off Recessed Tri-Gate GaN Power MOSFETs With Low on-Resistance

IEEE electron device letters, 2019-08, Vol.40 (8), p.1289-1292

2019

Volltextzugriff (PDF)

Intrinsic Polarization Super Junctions: Design of Single and Multichannel GaN Structures

IEEE transactions on electron devices, 2022-04, Vol.69 (4), p.1798-1804

2022

Volltextzugriff (PDF)

Impact of Fin Width on Tri-Gate GaN MOSHEMTs

IEEE transactions on electron devices, 2019-09, Vol.66 (9), p.4068-4074

2019

Volltextzugriff (PDF)

P-GaN Tri-Gate MOS Structure for Normally-Off GaN Power Transistors

IEEE electron device letters, 2021-01, Vol.42 (1), p.82-85

2021

Volltextzugriff (PDF)

Flexible CMOS integrated circuits based on carbon nanotubes with sub-10 ns stage delays

Nature electronics, 2018-03, Vol.1 (3), p.191-196

2018

Volltextzugriff (PDF)

In-Chip Microfluidic Cooling Integrated on GaN Power IC Reaching High Power Density of 78 kW/l

IEEE transactions on power electronics, 2024-08, Vol.39 (8), p.9717-9723

2024

Volltextzugriff (PDF)

C} Loss Tangent of Field-Effect Transistors: Generalizing High-Frequency Soft-Switching Losses

IEEE transactions on power electronics, 2020-12, Vol.35 (12), p.12585-12589

2020

Volltextzugriff (PDF)

Conformal Passivation of Multi-Channel GaN Power Transistors for Reduced Current Collapse

IEEE electron device letters, 2021-01, Vol.42 (1), p.86-89

2021

Volltextzugriff (PDF)

[Formula Omitted] Loss Tangent of Field-Effect Transistors: Generalizing High-Frequency Soft-Switching Losses

IEEE transactions on power electronics, 2020-01, Vol.35 (12), p.12585

2020

Volltextzugriff (PDF)

LiNiO Gate Dielectric with Tri-Gate Structure for High Performance E-mode GaN transistors

2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2021, p.135-138

2021

Volltextzugriff (PDF)

1 – 25 von 45

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(33)
Mit Volltextzugriff
(38)

Publikationsform

Artikel
(33)
Tagungsberichte
(12)

Sprache

Englisch
(45)

Erscheinungsjahr

n.n

Thema

Science & Technology
(33)
Technology
(25)
Engineering
(23)
Engineering, Electrical & Electronic
(22)
Gallium Nitrides
(22)
Gallium Nitride
(14)
Logic Gates
(14)
Electronic Devices
(12)
Performance Evaluation
(12)
Physical Sciences
(12)
Aluminum Gallium Nitrides
(11)
Hemts
(11)
Silicon
(11)
Transistors
(11)
Integrated Circuits
(10)
Semiconductor Devices
(9)
Gan
(8)
Physics
(8)
Physics, Applied
(8)
Power Semiconductor Devices
(8)

15 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 90 Tagen
(2)

Menü

Weitere Dienste

Einstellungen

GaN-based power devices: Physics, reliability, and perspectives

A perspective on multi-channel technology for the next-generation of GaN power devices

p-GaN field plate for low leakage current in lateral GaN Schottky barrier diodes

Impact of Embedded Liquid Cooling on the Electrical Characteristics of GaN-on-Si Power Transistors

Figures-of-Merit of Lateral GaN Power Devices: Modeling and Comparison of HEMTs and PSJs

Scalable Nanostructured Carbon Electrode Arrays for Enhanced Dopamine Detection

Co-designing electronics with microfluidics for more sustainable cooling

Performance of GaN Power Devices for Cryogenic Applications Down to 4.2 K

Large-Area High-Performance Flexible Pressure Sensor with Carbon Nanotube Active Matrix for Electronic Skin

High-Performance Nanowire-Based E-Mode Power GaN MOSHEMTs With Large Work-Function Gate Metal

Fast-Switching Tri-Anode Schottky Barrier Diodes for Monolithically Integrated GaN-on-Si Power Circuits

Stable enhancement-mode operation in GaN transistor based on LiNiO junction tri-gate

Stable enhancement-mode operation in GaN transistor based on LiNiO junctiontri-gate

Enhancement-Mode Multi-Channel AlGaN/GaN Transistors With LiNiO Junction Tri-Gate

Ultra-compact, High-Frequency Power Integrated Circuits Based on GaN-on-Si Schottky Barrier Diodes

High-Voltage Normally-off Recessed Tri-Gate GaN Power MOSFETs With Low on-Resistance

Intrinsic Polarization Super Junctions: Design of Single and Multichannel GaN Structures

Impact of Fin Width on Tri-Gate GaN MOSHEMTs

P-GaN Tri-Gate MOS Structure for Normally-Off GaN Power Transistors

Flexible CMOS integrated circuits based on carbon nanotubes with sub-10 ns stage delays

In-Chip Microfluidic Cooling Integrated on GaN Power IC Reaching High Power Density of 78 kW/l

C} Loss Tangent of Field-Effect Transistors: Generalizing High-Frequency Soft-Switching Losses

Conformal Passivation of Multi-Channel GaN Power Transistors for Reduced Current Collapse

[Formula Omitted] Loss Tangent of Field-Effect Transistors: Generalizing High-Frequency Soft-Switching Losses

LiNiO Gate Dielectric with Tri-Gate Structure for High Performance E-mode GaN transistors

Suchergebnisse filtern