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Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices

ACS applied materials & interfaces, 2016-08, Vol.8 (32), p.21089-21094

2016

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The influence of HfO2 film thickness on the interface state density and low field mobility of n channel HfO2/tin gate MOSFETs

Microelectronic engineering, 2007-09, Vol.84 (9-10), p.1874-1877

2007

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Multi-frequency inversion-charge pumping for charge separation and mobility analysis in high- k /InGaAs metal-oxide-semiconductor field-effect transistors

Journal of applied physics, 2015-11, Vol.118 (20)

2015

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Investigation of electron mobility in surface-channel Al2O3/In0.53Ga0.47As MOSFETs

Solid-state electronics, 2013-10, Vol.88, p.37-42

2013

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Determination of electron effective mass and electron affinity in HfO2 using MOS and MOSFET structures

Solid-state electronics, 2009-04, Vol.53 (4), p.438-444

2009

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Oxide Charge Engineering of Atomic Layer Deposited AlO x N y /Al 2 O 3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices

ACS applied materials & interfaces, 2016-08, Vol.8 (32), p.21089-21094

2016

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Electrical, structural, and chemical properties of HfO2 films formed by electron beam evaporation

Journal of applied physics, 2008-09, Vol.104 (6)

2008

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Analysis of effective mobility and hall effect mobility in high- k based In0.75Ga0.25As metal-oxide-semiconductor high-electron-mobility transistors

Applied physics letters, 2011-12, Vol.99 (23)

2011

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Analysis of electron mobility in HfO2/TiN gate metal-oxide-semiconductor field effect transistors: The influence of HfO2 thickness, temperature, and oxide charge

Journal of applied physics, 2009-01, Vol.105 (2)

2009

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Analysis of effective mobility and hall effect mobility in high- k based In 0.75 Ga 0.25 As metal-oxide-semiconductor high-electron-mobility transistors

Applied physics letters, 2011-12, Vol.99 (23), p.232101-232101-3

2011

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Investigation of electron mobility in surface-channel Al2O3/In0.53Ga0.47As MOSFETs: Selected extended papers from ULIS 2012 conference

Solid-state electronics, 2013, Vol.88, p.37-42

2013

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Analysis of electron mobility in HfO 2 / TiN gate metal-oxide-semiconductor field effect transistors: The influence of HfO 2 thickness, temperature, and oxide charge

Journal of applied physics, 2009-01, Vol.105 (2), p.024510-024510-8

2009

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Determination of electron effective mass and electron affinity in HfO2 using MOS and MOSFET structures: Special Issue with Papers Selected from the Ultimate Integration on Silicon Conference, Ulis 2008

Solid-state electronics, 2009, Vol.53 (4), p.438-444

2009

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Effects of High-Energy Ion Irradiation on the Conduction Characteristics of HfO 2 -based MOSFET Devices

ECS transactions, 2010-10, Vol.31 (1), p.327-332

2010

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Electrical, structural, and chemical properties of HfO 2 films formed by electron beam evaporation

Journal of applied physics, 2008-09, Vol.104 (6), p.064113-064113-10

2008

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Oxide Charge Engineering of Atomic Layer Deposited AlO x N y /Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices

ACS applied materials & interfaces, 2016-08, Vol.8 (32), p.21089-21094

2016

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The Influence of Oxide Charge on Carrier Mobility in HfO2/TiN Gate Silicon MOSFETs

ECS transactions, 2009, Vol.19 (2), p.379-391

2009

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Determination of electron effective mass and electron affinity in HfO sub(2 using MOS and MOSFET structures)

Solid-state electronics, 2009-04, Vol.53 (4), p.438-444

2009

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The Formation and Characterisation of Lanthanum Oxide Based Si/High-k/NiSi Gate Stacks by Electron-Beam Evaporation: An Examination of In-Situ Amorphous Silicon Capping and NiSi formation

ECS transactions, 2007, Vol.11 (4), p.145-156

2007

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Determination of the Coulomb Scattering Parameter (Alpha) for ALD HfO2/TiN Gate n and p-MOSFETs Using Negative Bias Temperature Stress

ECS transactions, 2007, Vol.11 (4), p.639-644

2007

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Extreme learning machine and back propagation neural network comparison for temperature and humidity control of oyster mushroom based on microcontroller

2017 International Symposium on Electronics and Smart Devices (ISESD), 2017, p.46-50

2017

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Comparison of Neural Network (NN) and Extreme Learning Machine (ELM) on thickness auto adjustment of instant noodle dough on roll press machine

2017 International Symposium on Electronics and Smart Devices (ISESD), 2017, p.107-111

2017

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ANALISIS KEPUASAN DAN LOYALITAS KONSUMEN TERHADAP PISANG RAJA SEREH DAN PISANG CAVENDISH DI KOTA BANDAR LAMPUNG

Jurnal Ilmu-Ilmu Agribisnis, 2020-08, Vol.8 (1), p.124

2020

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Determination of physical parameters for HfO2/SiOx/TiN MOSFET gate stacks by electrical characterization and reverse modeling

2008 9th International Conference on Ultimate Integration of Silicon, 2008, p.107-110

2008

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Numerical Investigation of Negative Corona Discharge From Protrusion on Parallel Plane Electrodes in Air Insulation

IEEE transactions on plasma science, 2022-10, Vol.50 (10), p.3830-3838

2022

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Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices

The influence of HfO2 film thickness on the interface state density and low field mobility of n channel HfO2/tin gate MOSFETs

Multi-frequency inversion-charge pumping for charge separation and mobility analysis in high- k /InGaAs metal-oxide-semiconductor field-effect transistors

Investigation of electron mobility in surface-channel Al2O3/In0.53Ga0.47As MOSFETs

Determination of electron effective mass and electron affinity in HfO2 using MOS and MOSFET structures

Oxide Charge Engineering of Atomic Layer Deposited AlO x N y /Al 2 O 3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices

Electrical, structural, and chemical properties of HfO2 films formed by electron beam evaporation

Analysis of effective mobility and hall effect mobility in high- k based In0.75Ga0.25As metal-oxide-semiconductor high-electron-mobility transistors

Analysis of electron mobility in HfO2/TiN gate metal-oxide-semiconductor field effect transistors: The influence of HfO2 thickness, temperature, and oxide charge

Analysis of effective mobility and hall effect mobility in high- k based In 0.75 Ga 0.25 As metal-oxide-semiconductor high-electron-mobility transistors

Investigation of electron mobility in surface-channel Al2O3/In0.53Ga0.47As MOSFETs: Selected extended papers from ULIS 2012 conference

Analysis of electron mobility in HfO 2 / TiN gate metal-oxide-semiconductor field effect transistors: The influence of HfO 2 thickness, temperature, and oxide charge

Determination of electron effective mass and electron affinity in HfO2 using MOS and MOSFET structures: Special Issue with Papers Selected from the Ultimate Integration on Silicon Conference, Ulis 2008

Effects of High-Energy Ion Irradiation on the Conduction Characteristics of HfO 2 -based MOSFET Devices

Electrical, structural, and chemical properties of HfO 2 films formed by electron beam evaporation

Oxide Charge Engineering of Atomic Layer Deposited AlO x N y /Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices

The Influence of Oxide Charge on Carrier Mobility in HfO2/TiN Gate Silicon MOSFETs

Determination of electron effective mass and electron affinity in HfO sub(2 using MOS and MOSFET structures)

The Formation and Characterisation of Lanthanum Oxide Based Si/High-k/NiSi Gate Stacks by Electron-Beam Evaporation: An Examination of In-Situ Amorphous Silicon Capping and NiSi formation

Determination of the Coulomb Scattering Parameter (Alpha) for ALD HfO2/TiN Gate n and p-MOSFETs Using Negative Bias Temperature Stress

Extreme learning machine and back propagation neural network comparison for temperature and humidity control of oyster mushroom based on microcontroller

Comparison of Neural Network (NN) and Extreme Learning Machine (ELM) on thickness auto adjustment of instant noodle dough on roll press machine

ANALISIS KEPUASAN DAN LOYALITAS KONSUMEN TERHADAP PISANG RAJA SEREH DAN PISANG CAVENDISH DI KOTA BANDAR LAMPUNG

Determination of physical parameters for HfO2/SiOx/TiN MOSFET gate stacks by electrical characterization and reverse modeling

Numerical Investigation of Negative Corona Discharge From Protrusion on Parallel Plane Electrodes in Air Insulation

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