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GaN electronics for high power, high temperature applications

Materials science & engineering. B, Solid-state materials for advanced technology, 2001-05, Vol.82 (1), p.227-231

2001

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Preparation and characterization of pentacene-based organic thin-film transistors with PVA passivation layers

Thin solid films, 2009-07, Vol.517 (17), p.5318-5321

2009

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Matrix dependence of strain-induced wavelength shift in self-assembled InAs quantum-dot heterostructures

Applied physics letters, 2000-03, Vol.76 (12), p.1567-1569

2000

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Effects of nano-structured photonic crystals on light extraction enhancement of nitride light-emitting diodes

Thin solid films, 2011-05, Vol.519 (15), p.5074-5077

2011

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Design and simulation in GaN based light emitting diodes using focused ion beam generated photonic crystals

Surface & coatings technology, 2009-06, Vol.203 (17), p.2674-2678

2009

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Effects of thermal annealing on the luminescence and structural properties of high indium-content InGaN/GaN quantum wells

Applied physics letters, 2000-06, Vol.76 (26), p.3902-3904

2000

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Effect of column III vacancy on arsenic precipitation in low-temperature grown III–V arsenides

Applied physics letters, 1998-02, Vol.72 (5), p.587-589

1998

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Schottky rectifiers fabricated on free-standing GaN substrates

Solid-state electronics, 2001-03, Vol.45 (3), p.405-410

2001

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Forward turn-on and reverse blocking characteristics of GaN Schottky and p-i-n rectifiers

Solid-state electronics, 2000-07, Vol.44 (7), p.1157-1161

2000

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Effects of point defect distribution on arsenic precipitation in low-temperature grown III–V arsenides

Journal of applied physics, 1999-09, Vol.86 (5), p.2442-2447

1999

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Spatial distribution of electrical properties in GaN p-i-n rectifiers

Solid-state electronics, 2000-09, Vol.44 (9), p.1591-1595

2000

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Unusual behavior of the electrical properties of GaN p-i-n rectifiers caused by the presence of deep centers and by migration of shallow donors

Solid-state electronics, 2000-09, Vol.44 (9), p.1549-1555

2000

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Electrical properties and spectra of deep centers in GaN p-i-n rectifier structures

Journal of electronic materials, 2001-03, Vol.30 (3), p.147-155

2001

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Comparison of GaN p-i-n and Schottky rectifier performance

IEEE transactions on electron devices, 2001-03, Vol.48 (3), p.407-411

2001

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Behavior of arsenic precipitation in low-temperature grown III–V arsenides

Journal of crystal growth, 1999-05, Vol.201, p.212-216

1999

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Photocurrent studies of the carrier escape process from InAs self-assembled quantum dots

Physical review. B, Condensed matter, 2000-09, Vol.62 (11), p.6959-6962

2000

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SiO[sub 2]/Gd[sub 2]O[sub 3]/GaN Metal Oxide Semiconductor Field Effect Transistors

Journal of the Electrochemical Society, 2001, Vol.148 (6), p.G303

2001

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Processing And Device Performance Of GaN Power Rectifiers

MRS Internet journal of nitride semiconductor research, 2000, Vol.5 (S1), p.838-844

2000

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Phonon-Assisted Auger Recombination Processes in InGaAs/GaAs Single-Quantum-Well Lasers

Japanese Journal of Applied Physics, 2004, Vol.43 (3R), p.890-893

2004

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Characterization of the anomalous luminescence properties from self-ordered porous anodic alumina with oxalic acid electrolytes

Thin solid films, 2009-12, Vol.518 (5), p.1439-1442

2009

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Intersublevel Relaxation Dependence of Carrier Hopping in Self-Organized InAs Quantum Dot Heterostructures

Solid state phenomena, 2004-01, Vol.99-100, p.41-48

2004

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GaN Electronics for High Power, High Temperature Applications

The Electrochemical Society interface, 2000-06, Vol.9 (2), p.34-39

2000

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Carrier dynamics study of the temperature- and excitation-dependent photoluminescence of InAs ∕ GaAs quantum dots

Journal of applied physics, 2006-01, Vol.99 (1), p.013506-013506-7

2006

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Characterization of Berthelot-type behaviors of InGaN/GaN semiconductor heterosystems

Journal of crystal growth, 2006-01, Vol.287 (2), p.468-471

2006

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Study of electroluminescence quenching in the InGaN/GaN blue diode with multi-quantum barrier structure

Journal of crystal growth, 2005-05, Vol.278 (1), p.421-425

2005

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GaN electronics for high power, high temperature applications

Preparation and characterization of pentacene-based organic thin-film transistors with PVA passivation layers

Matrix dependence of strain-induced wavelength shift in self-assembled InAs quantum-dot heterostructures

Effects of nano-structured photonic crystals on light extraction enhancement of nitride light-emitting diodes

Design and simulation in GaN based light emitting diodes using focused ion beam generated photonic crystals

Effects of thermal annealing on the luminescence and structural properties of high indium-content InGaN/GaN quantum wells

Effect of column III vacancy on arsenic precipitation in low-temperature grown III–V arsenides

Schottky rectifiers fabricated on free-standing GaN substrates

Forward turn-on and reverse blocking characteristics of GaN Schottky and p-i-n rectifiers

Effects of point defect distribution on arsenic precipitation in low-temperature grown III–V arsenides

Spatial distribution of electrical properties in GaN p-i-n rectifiers

Unusual behavior of the electrical properties of GaN p-i-n rectifiers caused by the presence of deep centers and by migration of shallow donors

Electrical properties and spectra of deep centers in GaN p-i-n rectifier structures

Comparison of GaN p-i-n and Schottky rectifier performance

Behavior of arsenic precipitation in low-temperature grown III–V arsenides

Photocurrent studies of the carrier escape process from InAs self-assembled quantum dots

SiO[sub 2]/Gd[sub 2]O[sub 3]/GaN Metal Oxide Semiconductor Field Effect Transistors

Processing And Device Performance Of GaN Power Rectifiers

Phonon-Assisted Auger Recombination Processes in InGaAs/GaAs Single-Quantum-Well Lasers

Characterization of the anomalous luminescence properties from self-ordered porous anodic alumina with oxalic acid electrolytes

Intersublevel Relaxation Dependence of Carrier Hopping in Self-Organized InAs Quantum Dot Heterostructures

GaN Electronics for High Power, High Temperature Applications

Carrier dynamics study of the temperature- and excitation-dependent photoluminescence of InAs ∕ GaAs quantum dots

Characterization of Berthelot-type behaviors of InGaN/GaN semiconductor heterosystems

Study of electroluminescence quenching in the InGaN/GaN blue diode with multi-quantum barrier structure

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