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Design of Tunneling Field-Effect Transistors Using Strained-Silicon/Strained-Germanium Type-II Staggered Heterojunctions

IEEE electron device letters, 2008-09, Vol.29 (9), p.1074-1077

2008

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Adaptive spiking, itinerancy, and quantum effects in artificial neuron circuit hardware with niobium–hafnium oxide-niobium memristor devices inserted

AIP advances, 2024-08, Vol.14 (8), p.085228-085228-10

2024

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Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors

IEEE electron device letters, 2011-04, Vol.32 (4), p.473-475

2011

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A Simple Semiempirical Short-Channel MOSFET Current-Voltage Model Continuous Across All Regions of Operation and Employing Only Physical Parameters

IEEE transactions on electron devices, 2009-08, Vol.56 (8), p.1674-1680

2009

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Heterojunction Tunneling Transistors Using Gate-Controlled Tunneling Across Silicon-Germanium/Silicon Epitaxial Thin Films

IEEE electron device letters, 2011-07, Vol.32 (7), p.844-846

Nayfeh, O. M.

2011

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Graphene Transistors on Mechanically Flexible Polyimide Incorporating Atomic-Layer-Deposited Gate Dielectric

IEEE electron device letters, 2011-10, Vol.32 (10), p.1349-1351

Nayfeh, O. M.

2011

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Radio-Frequency Transistors Using Chemical-Vapor-Deposited Monolayer Graphene: Performance, Doping, and Transport Effects

IEEE transactions on electron devices, 2011-09, Vol.58 (9), p.2847-2853

Nayfeh, O. M.

2011

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Strained-Si1―xGex/Si Band-to-Band Tunneling Transistors: Impact of Tunnel-Junction Germanium Composition and Doping Concentration on Switching Behavior

IEEE transactions on electron devices, 2009-10, Vol.56 (10), p.2264-2269

2009

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Measurement of Enhanced Gate-Controlled Band-to-Band Tunneling in Highly Strained Silicon-Germanium Diodes

IEEE electron device letters, 2008-05, Vol.29 (5), p.468-470

2008

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Silicon nanoparticle-ZnS nanophosphors for ultraviolet-based white light emitting diode

Journal of applied physics, 2012-10, Vol.112 (7)

2012

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Increased mobility for layer-by-layer transferred chemical vapor deposited graphene/boron-nitride thin films

Applied physics letters, 2013-03, Vol.102 (10)

2013

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Uniform delivery of silicon nanoparticles on device quality substrates using spin coating from isopropyl alcohol colloids

Applied physics letters, 2009-01, Vol.94 (4), p.043112-043112-3

2009

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Low Voltage and High-Speed Niobium Heterostructure Resistance Switching Memory Devices Integrating Ferro-Electric Enhanced Aluminum-Hafnium-Chromium-Aluminum Oxide

IEEE journal of the Electron Devices Society, 2017-09, Vol.5 (5), p.347-361

2017

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Formation of Single Tiers of Bridging Silicon Nanowires for Transistor Applications Using Vapor-Liquid-Solid Growth from Short Silicon-on-Insulator Sidewalls

Small (Weinheim an der Bergstrasse, Germany), 2009-11, Vol.5 (21), p.2440-2444

2009

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Strained- \hbox\hbox/\hbox Band-to-Band Tunneling Transistors: Impact of Tunnel-Junction Germanium Composition and Doping Concentration on Switching Behavior

IEEE transactions on electron devices, 2009-10, Vol.56 (10), p.2264-2269

2009

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Memory effects in metal-oxide-semiconductor capacitors incorporating dispensed highly monodisperse 1 nm silicon nanoparticles

Applied physics letters, 2007-04, Vol.90 (15), p.153105-153105-3

2007

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Continuous MOSFET performance increase with device scaling: The role of strain and channel material innovations

IBM journal of research and development, 2006-07, Vol.50 (4.5), p.363-376

2006

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HIGH FREQUENCY TOP-GATED GRAPHENE RF AMBIPOLAR FETs USING LARGE-AREA CVD GRAPHENE AND ADVANCED DIELECTRICS

MRS proceedings, 2011, Vol.1283 (1), Article mrsf10-1283-b03-08

2011

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EXTREMELY SCALABLE CROSS-POINT TOP-GATED HETEROJUNCTION TUNNELING-TRANSISTORS

International journal of high speed electronics, 2011-09, Vol.20 (3), p.707-711

2011

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Erratum: "Uniform Delivery of Silicon Nanoparticles on Device Quality Substrates using Spin-Coating from Isopropyl Alcohol Colloids" [ Appl. Phys. Lett. 94 , 043112 ( 2009 )]

Applied physics letters, 2009-01, Vol.94 (4), p.049902-049902-1

2009

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Memory effects in metal-oxide-semiconductor capacitors incorporating dispensed highly monodisperse 1nm silicon nanoparticles

Applied physics letters, 2007-04, Vol.90 (15)

2007

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Superconductor-ionic quantum memory devices

2016 74th Annual Device Research Conference (DRC), 2016, p.1-2

2016

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HIGH FREQUENCY GRAPHENE TRANSISTORS USING LARGE-AREA CVD GRAPHENE AND ADVANCED DIELECTRICS

International journal of high speed electronics, 2011-09, Vol.20 (3), p.669-677

2011

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Majority and minority carrier mobility behavior and device modeling of doped CVD monolayer graphene transistors

68th Device Research Conference, 2010, p.83-84

2010

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Memory Effects in Metal-Oxide-Semiconductor Capacitors Incorporating Dispensed Highly Mono-disperse One-Nanometer Silicon Nanoparticles

2007 65th Annual Device Research Conference, 2007, p.219-220

2007

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Design of Tunneling Field-Effect Transistors Using Strained-Silicon/Strained-Germanium Type-II Staggered Heterojunctions

Adaptive spiking, itinerancy, and quantum effects in artificial neuron circuit hardware with niobium–hafnium oxide-niobium memristor devices inserted

Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors

A Simple Semiempirical Short-Channel MOSFET Current-Voltage Model Continuous Across All Regions of Operation and Employing Only Physical Parameters

Heterojunction Tunneling Transistors Using Gate-Controlled Tunneling Across Silicon-Germanium/Silicon Epitaxial Thin Films

Graphene Transistors on Mechanically Flexible Polyimide Incorporating Atomic-Layer-Deposited Gate Dielectric

Radio-Frequency Transistors Using Chemical-Vapor-Deposited Monolayer Graphene: Performance, Doping, and Transport Effects

Strained-Si1―xGex/Si Band-to-Band Tunneling Transistors: Impact of Tunnel-Junction Germanium Composition and Doping Concentration on Switching Behavior

Measurement of Enhanced Gate-Controlled Band-to-Band Tunneling in Highly Strained Silicon-Germanium Diodes

Silicon nanoparticle-ZnS nanophosphors for ultraviolet-based white light emitting diode

Increased mobility for layer-by-layer transferred chemical vapor deposited graphene/boron-nitride thin films

Uniform delivery of silicon nanoparticles on device quality substrates using spin coating from isopropyl alcohol colloids

Low Voltage and High-Speed Niobium Heterostructure Resistance Switching Memory Devices Integrating Ferro-Electric Enhanced Aluminum-Hafnium-Chromium-Aluminum Oxide

Formation of Single Tiers of Bridging Silicon Nanowires for Transistor Applications Using Vapor-Liquid-Solid Growth from Short Silicon-on-Insulator Sidewalls

Strained- \hbox\hbox/\hbox Band-to-Band Tunneling Transistors: Impact of Tunnel-Junction Germanium Composition and Doping Concentration on Switching Behavior

Memory effects in metal-oxide-semiconductor capacitors incorporating dispensed highly monodisperse 1 nm silicon nanoparticles

Continuous MOSFET performance increase with device scaling: The role of strain and channel material innovations

HIGH FREQUENCY TOP-GATED GRAPHENE RF AMBIPOLAR FETs USING LARGE-AREA CVD GRAPHENE AND ADVANCED DIELECTRICS

EXTREMELY SCALABLE CROSS-POINT TOP-GATED HETEROJUNCTION TUNNELING-TRANSISTORS

Erratum: "Uniform Delivery of Silicon Nanoparticles on Device Quality Substrates using Spin-Coating from Isopropyl Alcohol Colloids" [ Appl. Phys. Lett. 94 , 043112 ( 2009 )]

Memory effects in metal-oxide-semiconductor capacitors incorporating dispensed highly monodisperse 1nm silicon nanoparticles

Superconductor-ionic quantum memory devices

HIGH FREQUENCY GRAPHENE TRANSISTORS USING LARGE-AREA CVD GRAPHENE AND ADVANCED DIELECTRICS

Majority and minority carrier mobility behavior and device modeling of doped CVD monolayer graphene transistors

Memory Effects in Metal-Oxide-Semiconductor Capacitors Incorporating Dispensed Highly Mono-disperse One-Nanometer Silicon Nanoparticles

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