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Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation

IEEE electron device letters, 2017-08, Vol.38 (8), p.1097-1100

2017

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Electrical and Low Frequency Noise Characterization of Graphene Chemical Sensor Devices Having Different Geometries

Sensors (Basel, Switzerland), 2022-02, Vol.22 (3), p.1183

2022

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Ultra-broadband photodetectors based on epitaxial graphene quantum dots

Nanophotonics (Berlin, Germany), 2018-03, Vol.7 (4), p.735-740

2018

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Electrothermal Evaluation of AlGaN/GaN Membrane High Electron Mobility Transistors by Transient Thermoreflectance

IEEE journal of the Electron Devices Society, 2018, Vol.6, p.922-930

2018

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Ion Implanted Lateral p+-i-n+ Diodes on HPSI 4H-SiC

Materials science forum, 2015-06, Vol.821-823, p.620-623

2015

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Fully Ion Implanted Vertical p-i-n Diodes on High Purity Semi-Insulating 4H-SiC Wafers

Materials science forum, 2012-05, Vol.717-720, p.985-988

2012

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Electrochemically Prepared Polycrystalline Copper Surface for the Growth of Hexagonal Boron Nitride

Crystal growth & design, 2017-04, Vol.17 (4), p.1669-1678

2017

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Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2017-05, Vol.35 (3)

2017

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Impact of surface treatments on high-κ dielectric integration with Ga-polar and N-polar GaN

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2014-05, Vol.32 (3)

2014

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Narrow plasmon resonances enabled by quasi-freestanding bilayer epitaxial graphene

2d materials, 2017-06, Vol.4 (2), p.25034

2017

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Ion Implanted Lateral p super(+)-i-n super(+) Diodes on HPSI 4H-SiC

Materials science forum, 2015-06, Vol.821-823, p.620-623

2015

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Challenges to graphene growth on SiC(0001‾): Substrate effects, hydrogen etching and growth ambient

Carbon (New York), 2015-01, Vol.81, p.73-82

2015

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Microwave Annealing of Al super(+) Implanted 4H-SiC: Towards Device Fabrication

Materials science forum, 2014-02, Vol.778-780, p.653-656

2014

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Transport Properties of 3D And 2D Disordered Electronic Materials

Nath, Anindya

2014

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Microwave Annealing of Al+ Implanted 4H-SiC: Towards Device Fabrication

Materials science forum, 2014, Vol.778-780, p.653-656

2014

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Simulation of the Temperature Dependence of Hall Carriers in Al Doped 4H-SiC

Materials science forum, 2012, Vol.717-720, p.237-240

2012

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Challenges to graphene growth on SiG(0001): Substrate effects, hydrogen etching and growth ambient

Carbon (New York), 2015, Vol.81, p.73-82

2015

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Quantifying substrate removal induced electrothermal degradation in AlGaN/GaN HEMTs

2017 75th Annual Device Research Conference (DRC), 2017, p.1-2

2017

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Improving Doping Efficiency of P+ Implanted Ions in 4H-SiC

Materials science forum, 2011, Vol.679-680, p.393-396

2011

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Post-Growth Reduction of Basal Plane Dislocations by High Temperature Annealing in 4H-SiC Epilayers

Materials science forum, 2014-02, Vol.778-780, p.324-327

2014

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In search of quantum-limited contact resistance: understanding the intrinsic and extrinsic effects on the graphene-metal interface

2d materials, 2016-04, Vol.3 (2), p.25013-025013

2016

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Influence of Uneven Patch Zeta Potential on Electroosmotic Mixing Characteristics in a Heterogeneously Charged Micromixer

Techno-Societal 2022, p.787-795

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Effect of Patch Length on Electroosmotic Mixing Characteristics Inside a Heterogeneously Charged Micromixer

Techno-Societal 2022, p.877-885

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Electrostatic Discharge Switch Simulation Enablement in RF SOI Technologies

2021 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), 2021, p.1-5

2021

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ESD Characterization and Modeling of Cascoded, Silicided FETs in a 22nm FDSOI Technology

2020 42nd Annual EOS/ESD Symposium (EOS/ESD), 2020, p.1-5

2020

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Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation

Electrical and Low Frequency Noise Characterization of Graphene Chemical Sensor Devices Having Different Geometries

Ultra-broadband photodetectors based on epitaxial graphene quantum dots

Electrothermal Evaluation of AlGaN/GaN Membrane High Electron Mobility Transistors by Transient Thermoreflectance

Ion Implanted Lateral p+-i-n+ Diodes on HPSI 4H-SiC

Fully Ion Implanted Vertical p-i-n Diodes on High Purity Semi-Insulating 4H-SiC Wafers

Electrochemically Prepared Polycrystalline Copper Surface for the Growth of Hexagonal Boron Nitride

Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering

Impact of surface treatments on high-κ dielectric integration with Ga-polar and N-polar GaN

Narrow plasmon resonances enabled by quasi-freestanding bilayer epitaxial graphene

Ion Implanted Lateral p super(+)-i-n super(+) Diodes on HPSI 4H-SiC

Challenges to graphene growth on SiC(0001‾): Substrate effects, hydrogen etching and growth ambient

Microwave Annealing of Al super(+) Implanted 4H-SiC: Towards Device Fabrication

Transport Properties of 3D And 2D Disordered Electronic Materials

Microwave Annealing of Al+ Implanted 4H-SiC: Towards Device Fabrication

Simulation of the Temperature Dependence of Hall Carriers in Al Doped 4H-SiC

Challenges to graphene growth on SiG(0001): Substrate effects, hydrogen etching and growth ambient

Quantifying substrate removal induced electrothermal degradation in AlGaN/GaN HEMTs

Improving Doping Efficiency of P+ Implanted Ions in 4H-SiC

Post-Growth Reduction of Basal Plane Dislocations by High Temperature Annealing in 4H-SiC Epilayers

In search of quantum-limited contact resistance: understanding the intrinsic and extrinsic effects on the graphene-metal interface

Influence of Uneven Patch Zeta Potential on Electroosmotic Mixing Characteristics in a Heterogeneously Charged Micromixer

Effect of Patch Length on Electroosmotic Mixing Characteristics Inside a Heterogeneously Charged Micromixer

Electrostatic Discharge Switch Simulation Enablement in RF SOI Technologies

ESD Characterization and Modeling of Cascoded, Silicided FETs in a 22nm FDSOI Technology

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