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Transport mechanisms of electrons and holes in dielectric films

Physics Uspekhi, 2013-01, Vol.56 (10), p.999-1012

2013

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Two-bands charge transport in silicon nitride due to phonon-assisted trap ionization

Journal of applied physics, 2004-10, Vol.96 (8), p.4293-4296

2004

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Charge transport mechanism in metal-nitride-oxide-silicon structures

IEEE electron device letters, 2002-06, Vol.23 (6), p.336-338

2002

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Phonon-coupled trap-assisted charge injection in metal-nitride-oxide-silicon/silicon-oxide-nitride-oxide-silicon structures

Journal of applied physics, 2009-06, Vol.105 (12), p.123709-123709-6

2009

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Specific Features of Magnetooptical Fluorescence Spectra for the Absorption of Polarized Radiation in the Transition to the Second Resonance Level in Alkali Metal Atoms

Optoelectronics, instrumentation, and data processing, 2023-04, Vol.59 (2), p.255-261

Nasyrov, K. A.

2023

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The charge transport mechanism in silicon nitride: Multi-phonon trap ionization

Solid-state electronics, 2009-03, Vol.53 (3), p.251-255

2009

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Charge transport in dielectrics via tunneling between traps

Journal of applied physics, 2011-05, Vol.109 (9), p.093705-093705-5

2011

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Modeling of a EEPROM device based on silicon quantum dots embedded in high-k dielectrics

Microelectronic engineering, 2005-08, Vol.81 (2), p.530-534

2005

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A new class of photo-induced phenomena in siloxane films

The European physical journal. D, Atomic, molecular, and optical physics, 2001-02, Vol.13 (2), p.231-235

2001

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A new low voltage fast SONOS memory with high- k dielectric

Solid-state electronics, 2003-10, Vol.47 (10), p.1651-1656

2003

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Method for determining the quality of an antirelaxation coating in optical cells

Optoelectronics, instrumentation, and data processing, 2016, Vol.52 (1), p.70-75

Nasyrov, K. A.

2016

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Charge transport mechanism in amorphous alumina

Applied physics letters, 2009-06, Vol.94 (22), p.222904-222904-3

2009

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Method of calculating resonances in cells with a high-quality antirelaxation coating

Optoelectronics, instrumentation, and data processing, 2015-03, Vol.51 (2), p.164-169

Nasyrov, K. A.

2015

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Separation of chemical elements and isotopes in chemically peculiar stellar atmospheres by the light-induced drift effect

Astronomy and astrophysics (Berlin), 1993-02, Vol.268 (1), p.201-211

1993

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Polarization properties of multiphoton processes in quantum systems with large angular momentum

Journal of physics. B, Atomic, molecular, and optical physics, 1999-07, Vol.32 (13), p.3135-3146

1999

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Magneto-optical resonances in cells with an antirelaxation coating for elliptically polarized radiation

Optoelectronics, instrumentation, and data processing, 2013, Vol.49 (1), p.87-93

Nasyrov, K. A.

2013

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Light-induced diffusion and desorption of alkali metals in a siloxane film: Theory and experiment

Physical review. A, Atomic, molecular, and optical physics, 1999-12, Vol.60 (6), p.4693-4700

1999

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Charge transport in dielectrics by tunneling between traps

Journal of experimental and theoretical physics, 2011-06, Vol.112 (6), p.1026-1034

2011

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Features of the 85Rb Spectrum in a Cell with an Antirelaxation Coating

Optoelectronics, instrumentation, and data processing, 2018-05, Vol.54 (3), p.307-313

2018

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Methods of modeling interaction of atoms with polarized radiation

Optoelectronics, instrumentation, and data processing, 2010-06, Vol.46 (3), p.248-255

Nasyrov, K. A.

2010

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Magnetooptical resonances in cells with residual buffer gas in elliptical polarization of radiation

Optoelectronics, instrumentation, and data processing, 2012-07, Vol.48 (4), p.389-395

2012

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The stability of a laser amplifier module with flat electrodes to parasitic oscillation

Optics communications, 1992-05, Vol.89 (2), p.229-232

1992

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Trap-assisted tunneling hole injection in SiO2: Experiment and theory

Journal of experimental and theoretical physics, 2009-11, Vol.109 (5), p.786-793

2009

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Multiphonon ionization of deep centers in amorphous silicon nitride: Experiment and numerical simulations

JETP letters, 2003-01, Vol.77 (7), p.385-388

2003

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Modeling the charge transport mechanism in amorphous Al2O3 with multiphonon trap ionization effect

Microelectronics and reliability, 2010-02, Vol.50 (2), p.207-210

2010

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Transport mechanisms of electrons and holes in dielectric films

Two-bands charge transport in silicon nitride due to phonon-assisted trap ionization

Charge transport mechanism in metal-nitride-oxide-silicon structures

Phonon-coupled trap-assisted charge injection in metal-nitride-oxide-silicon/silicon-oxide-nitride-oxide-silicon structures

Specific Features of Magnetooptical Fluorescence Spectra for the Absorption of Polarized Radiation in the Transition to the Second Resonance Level in Alkali Metal Atoms

The charge transport mechanism in silicon nitride: Multi-phonon trap ionization

Charge transport in dielectrics via tunneling between traps

Modeling of a EEPROM device based on silicon quantum dots embedded in high-k dielectrics

A new class of photo-induced phenomena in siloxane films

A new low voltage fast SONOS memory with high- k dielectric

Method for determining the quality of an antirelaxation coating in optical cells

Charge transport mechanism in amorphous alumina

Method of calculating resonances in cells with a high-quality antirelaxation coating

Separation of chemical elements and isotopes in chemically peculiar stellar atmospheres by the light-induced drift effect

Polarization properties of multiphoton processes in quantum systems with large angular momentum

Magneto-optical resonances in cells with an antirelaxation coating for elliptically polarized radiation

Light-induced diffusion and desorption of alkali metals in a siloxane film: Theory and experiment

Charge transport in dielectrics by tunneling between traps

Features of the 85Rb Spectrum in a Cell with an Antirelaxation Coating

Methods of modeling interaction of atoms with polarized radiation

Magnetooptical resonances in cells with residual buffer gas in elliptical polarization of radiation

The stability of a laser amplifier module with flat electrodes to parasitic oscillation

Trap-assisted tunneling hole injection in SiO2: Experiment and theory

Multiphonon ionization of deep centers in amorphous silicon nitride: Experiment and numerical simulations

Modeling the charge transport mechanism in amorphous Al2O3 with multiphonon trap ionization effect

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