UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Evaluation of the White Neutron Beam Spectrum for Single-Event Effects Testing at the RCNP Cyclotron Facility

Nuclear technology, 2011-02, Vol.173 (2), p.210-217

2011

Volltextzugriff (PDF)

Tolerance Against Terrestrial Neutron-Induced Single-Event Burnout in SiC MOSFETs

IEEE transactions on nuclear science, 2014-12, Vol.61 (6), p.3109-3114

2014

Volltextzugriff (PDF)

Terrestrial Neutron-Induced Single-Event Burnout in SiC Power Diodes

IEEE transactions on nuclear science, 2012-08, Vol.59 (4), p.880-885

2012

Volltextzugriff (PDF)

Photoluminescence of radiation induced defects in 3C-SiC epitaxially grown on Si

Journal of applied physics, 1995-01, Vol.77 (2), p.837-842

1995

Volltextzugriff (PDF)

Electron spin resonance in electron-irradiated 3C-SiC

Journal of applied physics, 1989-11, Vol.66 (9), p.4529-4531

1989

Volltextzugriff (PDF)

Oxygen-related defects in O+-implanted 6H–SiC studied by a monoenergetic positron beam

Journal of applied physics, 1999-11, Vol.86 (10), p.5392-5398

1999

Volltextzugriff (PDF)

Investigation of Vacancy-Type Defects in P + -Implanted 6H-SiC Using Monoenergetic Positron Beams

Japanese Journal of Applied Physics, 1998-05, Vol.37 (5R), p.2422

1998

Volltextzugriff (PDF)

Anomalous degradation in silicon solar cells subjected to high-fluence proton and electron irradiations

Journal of applied physics, 1997-05, Vol.81 (9), p.6491-6493

1997

Volltextzugriff (PDF)

Effect of ion position on single-event transient current

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1997-07, Vol.130 (1), p.486-490

1997

Volltextzugriff (PDF)

Characterization of residual defects in cubic silicon carbide subjected to hot-implantation and subsequent annealing

Journal of applied physics, 1997-12, Vol.82 (11), p.5339-5347

1997

Volltextzugriff (PDF)

Influence of Post-Oxidation Annealing on Electrical Characteristics in 6H-SiC MOSFETs

Materials science forum, 2000-05, Vol.338-342, p.1299-1302, Article 1299

2000

Volltextzugriff (PDF)

Generation of Interface Traps and Oxide-Trapped Charge in 6H-SiC Metal-Oxide-Semiconductor Transistors by Gamma-Ray Irradiation

Japanese Journal of Applied Physics, 1998-08, Vol.37 (8B), p.L1002, Article L1002

1998

Volltextzugriff (PDF)

Annealing properties of defects in ion-implanted 3C-SiC studied using monoenergetic positron beams

Japanese Journal of Applied Physics, 1997-11, Vol.36 (11), p.6650-6660

1997

Volltextzugriff (PDF)

Defects in ion-implanted 3C-SiC probed by a monoenergetic positron beam

Japanese Journal of Applied Physics, 1996-12, Vol.35 (12A), p.5986-5990

1996

Volltextzugriff (PDF)

Single-event Effects on LSIs

Radioisotopes, 1998, Vol.47 (10), p.799-800

NASHIYAMA, ISAMU

1998

Volltextzugriff (PDF)

Single-event current transients induced by high energy ion microbeams

IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), 1993-12, Vol.40 (6), p.1935-1940

1993

Volltextzugriff (PDF)

γ-Ray irradiation effects on 6H-SiC MOSFET

Materials science & engineering. B, Solid-state materials for advanced technology, 1999-07, Vol.61, p.480-484

1999

Volltextzugriff (PDF)

Crystallization of an amorphous layer in P+-implanted 6H-SiC studied by monoenergetic positron beams

Journal of applied physics, 2000-05, Vol.87 (9), p.4119-4125

2000

Volltextzugriff (PDF)

Studies of single-event transient current induced in GaAs and Si diodes by energetic heavy ions

Radiation physics and chemistry (Oxford, England : 1993), 2001, Vol.60 (4), p.269-272

2001

Volltextzugriff (PDF)

Studies of charge collection mechanisms in SOI devices using a heavy-ion microbeam

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1999-09, Vol.158 (1-4), p.260-263

1999

Volltextzugriff (PDF)

Radiation induced defects in CVD-grown 3C-SiC

IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA), 1990-12, Vol.37 (6), p.1732-1738

1990

Volltextzugriff (PDF)

ESR Studies of Defects in p-Type 6H-SiC Irradiated with 3MeV-Electrons

Materials science forum, 1998-01, Vol.264-268, p.615-618

1998

Volltextzugriff (PDF)

Positron annihilation studies of defects in 3C-SiC hot-implanted with nitrogen and aluminum ions

Applied physics. A, Materials science & processing, 1997-09, Vol.65 (3), p.315-323

1997

Volltextzugriff (PDF)

Low Temperature Proton Irradiation Damages in Silicon Solar-Cells

Japanese Journal of Applied Physics, 1976-01, Vol.15 (5), p.945-946

1976

Volltextzugriff (PDF)

Mechanism of anomalous degradation of silicon solar cells subjected to high-fluence irradiation

IEEE transactions on nuclear science, 1996-12, Vol.43 (6), p.2990-2997

1996

Volltextzugriff (PDF)

1 – 25 von 46

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(37)
Mit Volltextzugriff
(44)

Publikationsform

Sprache

Englisch
(46)

Erscheinungsjahr

n.n

Thema

Science & Technology
(36)
Physics
(25)
Physical Sciences
(24)
Technology
(24)
Physics, Applied
(16)
Materials Science
(15)
Nuclear Science & Technology
(12)
Materials Science, Multidisciplinary
(11)
Exact Sciences And Technology
(10)
Silicon
(8)
Engineering
(7)
Engineering, Electrical & Electronic
(7)
Annealing
(6)
Electron Spin Resonance
(6)
Physics, Atomic, Molecular & Chemical
(6)
Radiation Effects
(6)
Silicon Carbide
(6)
Applied Sciences
(5)
Ion Implantation
(5)
Materials Science, Coatings & Films
(5)

15 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

Evaluation of the White Neutron Beam Spectrum for Single-Event Effects Testing at the RCNP Cyclotron Facility

Tolerance Against Terrestrial Neutron-Induced Single-Event Burnout in SiC MOSFETs

Terrestrial Neutron-Induced Single-Event Burnout in SiC Power Diodes

Photoluminescence of radiation induced defects in 3C-SiC epitaxially grown on Si

Electron spin resonance in electron-irradiated 3C-SiC

Oxygen-related defects in O+-implanted 6H–SiC studied by a monoenergetic positron beam

Investigation of Vacancy-Type Defects in P + -Implanted 6H-SiC Using Monoenergetic Positron Beams

Anomalous degradation in silicon solar cells subjected to high-fluence proton and electron irradiations

Effect of ion position on single-event transient current

Characterization of residual defects in cubic silicon carbide subjected to hot-implantation and subsequent annealing

Influence of Post-Oxidation Annealing on Electrical Characteristics in 6H-SiC MOSFETs

Generation of Interface Traps and Oxide-Trapped Charge in 6H-SiC Metal-Oxide-Semiconductor Transistors by Gamma-Ray Irradiation

Annealing properties of defects in ion-implanted 3C-SiC studied using monoenergetic positron beams

Defects in ion-implanted 3C-SiC probed by a monoenergetic positron beam

Single-event Effects on LSIs

Single-event current transients induced by high energy ion microbeams

γ-Ray irradiation effects on 6H-SiC MOSFET

Crystallization of an amorphous layer in P+-implanted 6H-SiC studied by monoenergetic positron beams

Studies of single-event transient current induced in GaAs and Si diodes by energetic heavy ions

Studies of charge collection mechanisms in SOI devices using a heavy-ion microbeam

Radiation induced defects in CVD-grown 3C-SiC

ESR Studies of Defects in p-Type 6H-SiC Irradiated with 3MeV-Electrons

Positron annihilation studies of defects in 3C-SiC hot-implanted with nitrogen and aluminum ions

Low Temperature Proton Irradiation Damages in Silicon Solar-Cells

Mechanism of anomalous degradation of silicon solar cells subjected to high-fluence irradiation

Suchergebnisse filtern