UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

A 5-V-only operation 0.6- mu m flash EEPROM with row decoder scheme in triple-well structure

IEEE journal of solid-state circuits, 1992-11, Vol.27 (11), p.1540-1546

1992

Volltextzugriff (PDF)

A self-convergence erase for NOR flash EEPROM using avalanche hot carrier injection

IEEE transactions on electron devices, 1996-11, Vol.43 (11), p.1937-1941

1996

Volltextzugriff (PDF)

A 151-mm ^ 64-Gb 2 Bit/Cell NAND Flash Memory in 24-nm CMOS Technology

IEEE journal of solid-state circuits, 2012-01, Vol.47 (1), p.75-84

2012

Volltextzugriff (PDF)

Effect of aging treatment on serration of 6061 aluminum alloy

Journal of Japan Institute of Light Metals, 2001, Vol.51(7), pp.346-350

2001

Volltextzugriff (PDF)

A 16-Mb flash EEPROM with a new self-data-refresh scheme for a sector erase operation

IEEE journal of solid-state circuits, 1994-04, Vol.29 (4), p.461-469

1994

Volltextzugriff (PDF)

Radiation-Induced Interface States of Poly-Si Gate MOS Capacitors Using Low Temperature Gate Oxidation

IEEE transactions on nuclear science, 1983-01, Vol.30 (6), p.4054-4058

1983

Volltextzugriff (PDF)

Cases of choroidal metastatic cancer

Rinsho ganka, 1962-08, Vol.16, p.871

NARUKE, K

1962

Volltextzugriff (PDF)

A 44-mm(2) four-bank eight-word page-read 64-Mb flash memory with flexible block redundancy and fast accurate word-line voltage controller

IEEE journal of solid-state circuits, 2002-11, Vol.37 (11), p.1485-1492

2002

Volltextzugriff (PDF)

CMOS Shift Register Circuits for Radiation-Tolerant VLSI's

IEEE transactions on nuclear science, 1984-10, Vol.31 (5), p.1034-1038

1984

Volltextzugriff (PDF)

A 151mm2 64Gb MLC NAND flash memory in 24nm CMOS technology

2011 IEEE International Solid-State Circuits Conference, 2011, p.198-199

2011

Volltextzugriff (PDF)

Study on the zonule of fish

Nippon Ika Daigaku zasshi, 1966, Vol.33 (5), p.253-258

Naruke, K

1966

Volltextzugriff (PDF)

A 44-mm/sup 2/ four-bank eight-word page-read 64-Mb flash memory with flexible block redundancy and fast accurate word-line voltage controller

IEEE journal of solid-state circuits, 2002-11, Vol.37 (11), p.1485-1492

2002

Volltextzugriff (PDF)

A 44-mm2 four-bank eight-word page-read 64-Mb flash memory with flexible block redundancy and fast accurate word-line voltage controller

IEEE journal of solid-state circuits, 2002-11, Vol.37 (11), p.1485

2002

Volltextzugriff (PDF)

Simulation of NOR-Flash Memory Cells Focusing on Narrow Channel Effects on VTH Dispersion

2006 International Conference on Simulation of Semiconductor Processes and Devices, 2006, p.127-130

2006

Volltextzugriff (PDF)

A 44-mm super(2) four-bank eight-word page-read 64-Mb flash memory with flexible block redundancy and fast accurate word-line voltage controller

IEEE journal of solid-state circuits, 2002-01, Vol.37 (11)

2002

Volltextzugriff (PDF)

Effects of solution treatment temperature on serration in 6061 aluminum alloy sheets

Journal of Japan Institute of Light Metals, 2002, Vol.52(10), pp.460-464

2002

Volltextzugriff (PDF)

A 44 mm super(2) 4-bank 8-word page read 64 Mb flash memory with flexible block redundancy and fast accurate word-line voltage controller

Digest of technical papers - IEEE International Solid-State Circuits Conference, 2002-01, p.78-79+408-409

2002

Volltextzugriff (PDF)

Effects of low temperature aging and reversion treatment on serration of Al–Mg–Si alloys

Journal of Japan Institute of Light Metals, 2002, Vol.52(12), pp.586-590

2002

Volltextzugriff (PDF)

The study of the thermal oxide films on silicon wafers by Fourier transform infrared attenuated total reflection spectroscopy

Journal of applied physics, 1990-08, Vol.68 (4), p.1429-1434

1990

Volltextzugriff (PDF)

Stress induced leakage current limiting to scale down EEPROM tunnel oxide thickness

Technical Digest., International Electron Devices Meeting, 1988, p.424-427

1988

Volltextzugriff (PDF)

A 16-Mb flash EEPROM with a new self-data-refresh scheme for a sector erase operation: VLSI Circuits

IEEE journal of solid-state circuits, 1994, Vol.29 (4), p.461-469

1994

Volltextzugriff (PDF)

The study of the thermal oxide films on solicon wafers byu Fourier transform infrared attenuated total reflection spectroscopy

Journal of applied physics, 1990, Vol.68 (4), p.1429-1434

1990

Volltextzugriff (PDF)

A 5-V-only operation 0.6-μm flash EEPROM with row decoder scheme in triple-well structure : Memory and logic

IEEE journal of solid-state circuits, 1992, Vol.27 (11), p.1540-1546

1992

Volltextzugriff (PDF)

Electrical Activation of Boron Ions Implanted in Deposited-Amorphous Si During Solid Phase Epitaxy

Jpn. J. Appl. Phys. 2, Lett, 1982-09, Vol.21 (9), p.L577-L579

1982

Volltextzugriff (PDF)

Electrical Activation of B Ions Implanted in Deposited-Amorphous Si during Solid Phase Epitaxy

Japanese Journal of Applied Physics, 1982-01, Vol.21 (9A), p.L577

1982

Volltextzugriff (PDF)

1 – 25 von 193

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(124)
Mit Volltextzugriff
(135)

Publikationsform

Artikel
(181)
Tagungsberichte
(12)

Sprache

Erscheinungsjahr

n.n

Thema

Humans
(118)
Science & Technology
(94)
Male
(83)
Life Sciences & Biomedicine
(76)
Middle Aged
(76)
Female
(72)
Aged
(65)
Lung Neoplasms - Surgery
(57)
Adult
(52)
Lung Neoplasms - Pathology
(45)
Biological And Medical Sciences
(44)
Medical Sciences
(43)
Respiratory System
(41)
Surgery
(34)
Oncology
(31)
Pneumology
(27)
Tumors Of The Respiratory System And Mediastinum
(26)
Cardiovascular System & Cardiology
(25)
Cardiac & Cardiovascular Systems
(24)
Prognosis
(24)

15 weitere anzeigen...

Weniger anzeigen...

Kollektion

MEDLINE
(125)
EZB Electronic Journals Library
(98)
Journals@OVID
(73)
Ingenta
(73)
NUS Single-Journal Subscriptions
(37)
Elsevier ScienceDirect Journals Complete
(32)
IEEE Xplore
(25)
Oxford journals
(22)
Oxford Journals 2020 Medicine
(20)
IngentaConnect Journals
(13)
SpringerLink
(13)
SpringerLINK Contemporary (Konsortium Baden-Württemberg)
(11)
Wiley-Blackwell Journals
(11)
Elsevier Journal Backfiles on ScienceDirect (DFG Nationallizenzen)
(10)
Wiley Online Library
(6)
SpringerLink Series
(4)
JSTOR
(2)
AIP Journals
(2)
SAGE Journals
(2)
Nexis Uni
(1)

15 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

A 5-V-only operation 0.6- mu m flash EEPROM with row decoder scheme in triple-well structure

A self-convergence erase for NOR flash EEPROM using avalanche hot carrier injection

A 151-mm ^ 64-Gb 2 Bit/Cell NAND Flash Memory in 24-nm CMOS Technology

Effect of aging treatment on serration of 6061 aluminum alloy

A 16-Mb flash EEPROM with a new self-data-refresh scheme for a sector erase operation

Radiation-Induced Interface States of Poly-Si Gate MOS Capacitors Using Low Temperature Gate Oxidation

Cases of choroidal metastatic cancer

A 44-mm(2) four-bank eight-word page-read 64-Mb flash memory with flexible block redundancy and fast accurate word-line voltage controller

CMOS Shift Register Circuits for Radiation-Tolerant VLSI's

A 151mm2 64Gb MLC NAND flash memory in 24nm CMOS technology

Study on the zonule of fish

A 44-mm/sup 2/ four-bank eight-word page-read 64-Mb flash memory with flexible block redundancy and fast accurate word-line voltage controller

A 44-mm2 four-bank eight-word page-read 64-Mb flash memory with flexible block redundancy and fast accurate word-line voltage controller

Simulation of NOR-Flash Memory Cells Focusing on Narrow Channel Effects on VTH Dispersion

A 44-mm super(2) four-bank eight-word page-read 64-Mb flash memory with flexible block redundancy and fast accurate word-line voltage controller

Effects of solution treatment temperature on serration in 6061 aluminum alloy sheets

A 44 mm super(2) 4-bank 8-word page read 64 Mb flash memory with flexible block redundancy and fast accurate word-line voltage controller

Effects of low temperature aging and reversion treatment on serration of Al–Mg–Si alloys

The study of the thermal oxide films on silicon wafers by Fourier transform infrared attenuated total reflection spectroscopy

Stress induced leakage current limiting to scale down EEPROM tunnel oxide thickness

A 16-Mb flash EEPROM with a new self-data-refresh scheme for a sector erase operation: VLSI Circuits

The study of the thermal oxide films on solicon wafers byu Fourier transform infrared attenuated total reflection spectroscopy

A 5-V-only operation 0.6-μm flash EEPROM with row decoder scheme in triple-well structure : Memory and logic

Electrical Activation of Boron Ions Implanted in Deposited-Amorphous Si During Solid Phase Epitaxy

Electrical Activation of B Ions Implanted in Deposited-Amorphous Si during Solid Phase Epitaxy

Suchergebnisse filtern