UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Surface-plasmon-enhanced light emitters based on InGaN quantum wells

Nature materials, 2004-09, Vol.3 (9), p.601-605

2004

Volltextzugriff (PDF)

Surface plasmon enhanced spontaneous emission rate of InGaN ∕ GaN quantum wells probed by time-resolved photoluminescence spectroscopy

Applied physics letters, 2005-08, Vol.87 (7), p.071102-071102-3

2005

Volltextzugriff (PDF)

Blue, Green, and Amber InGaN/GaN Light-Emitting Diodes on Semipolar {11-22} GaN Bulk Substrates

Japanese Journal of Applied Physics, 2006-07, Vol.45 (7L), p.L659

2006

Volltextzugriff (PDF)

Recent progress of high efficiency white LEDs

Physica status solidi. A, Applications and materials science, 2007-06, Vol.204 (6), p.2087-2093

2007

Volltextzugriff (PDF)

Ultra-High Efficiency White Light Emitting Diodes

Japanese Journal of Applied Physics, 2006-10, Vol.45 (10L), p.L1084

2006

Volltextzugriff (PDF)

Successful fabrication of white light emitting diodes by using extremely high external quantum efficiency blue chips

Physica status solidi. A, Applications and materials science, 2008-05, Vol.205 (5), p.1081-1085

2008

Volltextzugriff (PDF)

Phosphor-Conversion White Light Emitting Diode Using InGaN Near-Ultraviolet Chip

Japanese Journal of Applied Physics, 2002-04, Vol.41 (Part 2, No. 4A), p.L371-L373

2002

Volltextzugriff (PDF)

Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm

Applied physics letters, 1997-02, Vol.70 (8), p.981-983

1997

Volltextzugriff (PDF)

Phosphor Free High-Luminous-Efficiency White Light-Emitting Diodes Composed of InGaN Multi-Quantum Well

Japanese Journal of Applied Physics, 2002-03, Vol.41 (Part 2, No. 3A), p.L246-L248

2002

Volltextzugriff (PDF)

InGaN-Based Near-Ultraviolet and Blue-Light-Emitting Diodes with High External Quantum Efficiency Using a Patterned Sapphire Substrate and a Mesh Electrode

Japanese Journal of Applied Physics, 2002-12, Vol.41 (Part 2, No. 12B), p.L1431-L1433

2002

Volltextzugriff (PDF)

White light emitting diodes with super-high luminous efficacy

Journal of physics. D, Applied physics, 2010-09, Vol.43 (35), p.354002

2010

Volltextzugriff (PDF)

Improvement of Luminous Efficiency in White Light Emitting Diodes by Reducing a Forward-bias Voltage

Japanese Journal of Applied Physics, 2007-10, Vol.46 (10L), p.L963

2007

Volltextzugriff (PDF)

Surface plasmon enhanced bright light emission from InGaN/GaN

Physica status solidi. A, Applications and materials science, 2007-06, Vol.204 (6), p.2103-2107

2007

Volltextzugriff (PDF)

Spatial and temporal luminescence dynamics in an InxGa1−xN single quantum well probed by near-field optical microscopy

Applied physics letters, 2002-12, Vol.81 (23), p.4353-4355

2002

Volltextzugriff (PDF)

Experimental and Theoretical Considerations of Polarization Field Direction in Semipolar InGaN/GaN Quantum Wells

Applied physics express, 2010-07, Vol.3 (7), p.71001

2010

Volltextzugriff (PDF)

White-Light LEDS

Optics and photonics news, 2004-04, Vol.15 (4), p.24

Narukawa, Yukio

2004

Volltextzugriff (PDF)

Discrimination of local radiative and nonradiative recombination processes in an InGaN/GaN single-quantum-well structure by a time-resolved multimode scanning near-field optical microscopy

Applied physics letters, 2003-10, Vol.83 (17), p.3462-3464

2003

Volltextzugriff (PDF)

Improvement in Output Power of 280-nm Deep Ultraviolet Light-Emitting Diode by Using AlGaN Multi Quantum Wells

Applied physics express, 2010-04, Vol.3 (4), p.41001

2010

Volltextzugriff (PDF)

Radiative and nonradiative recombination processes in ultraviolet light-emitting diode composed of an In0.02Ga0.98N active layer

Applied physics letters, 1999-01, Vol.74 (4), p.558-560

1999

Volltextzugriff (PDF)

Misfit Dislocation Generation in InGaN Epilayers on Free-Standing GaN

Japanese Journal of Applied Physics, 2006-06, Vol.45 (6L), p.L549

2006

Volltextzugriff (PDF)

Observation of optical instabilities in the photoluminescence of InGaN single quantum well

Applied physics letters, 2006-02, Vol.88 (6), p.061118-061118-3

2006

Volltextzugriff (PDF)

A Methodological Study of the Best Solution for Generating White Light Using Nitride-Based Light-Emitting Diodes

IEICE transactions on electronics, 2005-09, Vol.E88-C (9), p.1860-1871

YAMADA, M.

2005

Volltextzugriff (PDF)

Suppression mechanism of optical gain formation in InxGa1-xN quantum well structures due to localized carriers

Solid state communications, 2006-10, Vol.140 (3-4), p.182-184

2006

Volltextzugriff (PDF)

Recombination dynamics of excitons and biexcitons in a hexagonal GaN epitaxial layer

Applied physics letters, 1996-09, Vol.69 (10), p.1414-1416

1996

Volltextzugriff (PDF)

Direct correlation between nonradiative recombination centers and threading dislocations in InGaN quantum wells by near-field photoluminescence spectroscopy

Physica status solidi. C, 2006-06, Vol.3 (6), p.1897-1901

2006

Volltextzugriff (PDF)

1 – 25 von 61

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(50)
Mit Volltextzugriff
(53)

Publikationsform

Sprache

Englisch
(61)
Japanisch
(1)

Erscheinungsjahr

n.n

Menü

Weitere Dienste

Einstellungen

Surface-plasmon-enhanced light emitters based on InGaN quantum wells

Surface plasmon enhanced spontaneous emission rate of InGaN ∕ GaN quantum wells probed by time-resolved photoluminescence spectroscopy

Blue, Green, and Amber InGaN/GaN Light-Emitting Diodes on Semipolar {11-22} GaN Bulk Substrates

Recent progress of high efficiency white LEDs

Ultra-High Efficiency White Light Emitting Diodes

Successful fabrication of white light emitting diodes by using extremely high external quantum efficiency blue chips

Phosphor-Conversion White Light Emitting Diode Using InGaN Near-Ultraviolet Chip

Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm

Phosphor Free High-Luminous-Efficiency White Light-Emitting Diodes Composed of InGaN Multi-Quantum Well

InGaN-Based Near-Ultraviolet and Blue-Light-Emitting Diodes with High External Quantum Efficiency Using a Patterned Sapphire Substrate and a Mesh Electrode

White light emitting diodes with super-high luminous efficacy

Improvement of Luminous Efficiency in White Light Emitting Diodes by Reducing a Forward-bias Voltage

Surface plasmon enhanced bright light emission from InGaN/GaN

Spatial and temporal luminescence dynamics in an InxGa1−xN single quantum well probed by near-field optical microscopy

Experimental and Theoretical Considerations of Polarization Field Direction in Semipolar InGaN/GaN Quantum Wells

White-Light LEDS

Discrimination of local radiative and nonradiative recombination processes in an InGaN/GaN single-quantum-well structure by a time-resolved multimode scanning near-field optical microscopy

Improvement in Output Power of 280-nm Deep Ultraviolet Light-Emitting Diode by Using AlGaN Multi Quantum Wells

Radiative and nonradiative recombination processes in ultraviolet light-emitting diode composed of an In0.02Ga0.98N active layer

Misfit Dislocation Generation in InGaN Epilayers on Free-Standing GaN

Observation of optical instabilities in the photoluminescence of InGaN single quantum well

A Methodological Study of the Best Solution for Generating White Light Using Nitride-Based Light-Emitting Diodes

Suppression mechanism of optical gain formation in InxGa1-xN quantum well structures due to localized carriers

Recombination dynamics of excitons and biexcitons in a hexagonal GaN epitaxial layer

Direct correlation between nonradiative recombination centers and threading dislocations in InGaN quantum wells by near-field photoluminescence spectroscopy

Suchergebnisse filtern