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Growth of GaN on SiC/Si substrates using AlN buffer layer by hot-mesh CVD

Thin solid films, 2008-01, Vol.516 (5), p.659-662

2008

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Raman-Scattering Spectroscopy of Epitaxial Graphene Formed on SiC Film on Si Substrate

e-Journal of Surface Science and Nanotechnology, 2009/02/21, Vol.7, pp.107-109

2009

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Adsorption Density Control of N719 on TiO[sub 2] Electrodes for Highly Efficient Dye-Sensitized Solar Cells

Journal of the Electrochemical Society, 2009, Vol.156 (9), p.B987

2009

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Organic Gate Silicon Field Effect Transistors with Poly Methylmethacrylate Films for Science Education

IEICE transactions on electronics, 2010, Vol.E93-C (1), p.108-111

2010

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Suppression of atomic exchange between Ge and Si during germane adsorption on Si(001) using atomically flat surface

Thin solid films, 2006-06, Vol.508 (1), p.166-168

2006

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“Temperature oscillation” as a real-time monitoring of the growth of 3C–SiC on Si substrate

Applied surface science, 2008-07, Vol.254 (19), p.6235-6237

2008

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Initial stage of 3C–SiC growth on Si(0 0 1)–2 × 1 surface using monomethylsilane

Applied surface science, 2003-06, Vol.216 (1), p.575-579

2003

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Low-Temperature Heteroepitaxial Growth of SiC on (100) Si Using Hot-Mesh Chemical Vapor Deposition

Japanese Journal of Applied Physics, 2005-03, Vol.44 (3R), p.1361

2005

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Kinetics of hydrogen adsorption and desorption on Si(100) surfaces

Journal of applied physics, 2013-06, Vol.113 (23)

2013

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Si c(4×4) structure appeared in the initial stage of 3C-SiC epitaxial growth on Si(0 0 1) using monomethylsilane and dimethylsilane

Applied surface science, 2003-05, Vol.212-213, p.730-734

2003

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Interpretation of initial stage of 3C-SiC growth on Si(1 0 0) using dimethylsilane

Applied surface science, 2006-03, Vol.252 (10), p.3460-3465

2006

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Scanning-Tunneling Microscopy Observation of Monomethylsilane Adsorption on Si(111)-7×7

Japanese Journal of Applied Physics, 2005-03, Vol.44 (3R), p.1419

2005

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Effect of Introduction of Artificial Pinning Center in YBa2Cu3Oy Thin Films to Reduce Surface Resistance

IEEE transactions on applied superconductivity, 2017-06, Vol.27 (4), p.1-4

2017

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Low-Temperature Heteroepitaxial Growth of 3C-SiC(111) on Si(110) Substrate Using Monomethylsilane

ECS transactions, 2006-10, Vol.3 (5), p.449-455

2006

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In situ observation of reflection high-energy electron diffraction during the initial growth of SiC on Si using dimethylsilane

Journal of crystal growth, 2002-04, Vol.237, p.1254-1259

2002

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Ge-Dot Formation on Si(111)-7 ×7 Surface with C Predeposition Using Monomethylsilane

Japanese Journal of Applied Physics, 2005-01, Vol.44 (1L), p.L123

2005

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Fast neutron tolerance of the perpendicular-anisotropy CoFeB-MgO magnetic tunnel junctions with junction diameters between 46 and 64 nm

Japanese Journal of Applied Physics, 2017-08, Vol.56 (8), p.802

2017

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Real-Time Observation of Initial Thermal Oxidation on Si(110)-16x2 Surface by Photoemission Spectroscopy

ECS transactions, 2006-10, Vol.3 (2), p.311-316

2006

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Erratum: Raman-Scattering Spectroscopy of Epitaxial Graphene Formed on SiC Film on Si Substrate [e-J. Surf. Sci. Nanotech. Vol. 7, pp. 107-109 (2009)]

e-Journal of Surface Science and Nanotechnology, 2009/06/13, Vol.7, pp.699-699

2009

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Comparison of the Growth Characteristics of SiC on Si between Low-Pressure CVD and Triode Plasma CVD

Materials science forum, 2002-04, Vol.389-393, p.367-370

2002

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Initial oxidation of HF-acid treated SiGe(100) surfaces under air exposure investigated by synchrotron radiation X-ray photoelectron spectroscopy and IR absorption spectroscopy

Thin solid films, 2008-11, Vol.517 (1), p.209-212

2008

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Structural Analysis of Thermally-Annealed Bulk Heterojunction Films Based on Sexithiophene and Fullerene

Advances in materials physics and chemistry, 2014, Vol.4 (7), p.127-133

2014

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Ge dot formation using germane on a monomethylsilane-adsorbed Si(001)–2 × 1 surface

Thin solid films, 2006-06, Vol.508 (1), p.200-202

2006

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Formation of Ge Nanodots Capped with SiC Layer by Gas-Source MBE Using MMGe and MMSi

ECS transactions, 2013, Vol.50 (6), p.171-177

2013

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The growth of GaN films by alternate source gas supply hot-mesh CVD method

Thin solid films, 2009-04, Vol.517 (12), p.3528-3531

2009

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Growth of GaN on SiC/Si substrates using AlN buffer layer by hot-mesh CVD

Raman-Scattering Spectroscopy of Epitaxial Graphene Formed on SiC Film on Si Substrate

Adsorption Density Control of N719 on TiO[sub 2] Electrodes for Highly Efficient Dye-Sensitized Solar Cells

Organic Gate Silicon Field Effect Transistors with Poly Methylmethacrylate Films for Science Education

Suppression of atomic exchange between Ge and Si during germane adsorption on Si(001) using atomically flat surface

“Temperature oscillation” as a real-time monitoring of the growth of 3C–SiC on Si substrate

Initial stage of 3C–SiC growth on Si(0 0 1)–2 × 1 surface using monomethylsilane

Low-Temperature Heteroepitaxial Growth of SiC on (100) Si Using Hot-Mesh Chemical Vapor Deposition

Kinetics of hydrogen adsorption and desorption on Si(100) surfaces

Si c(4×4) structure appeared in the initial stage of 3C-SiC epitaxial growth on Si(0 0 1) using monomethylsilane and dimethylsilane

Interpretation of initial stage of 3C-SiC growth on Si(1 0 0) using dimethylsilane

Scanning-Tunneling Microscopy Observation of Monomethylsilane Adsorption on Si(111)-7×7

Effect of Introduction of Artificial Pinning Center in YBa2Cu3Oy Thin Films to Reduce Surface Resistance

Low-Temperature Heteroepitaxial Growth of 3C-SiC(111) on Si(110) Substrate Using Monomethylsilane

In situ observation of reflection high-energy electron diffraction during the initial growth of SiC on Si using dimethylsilane

Ge-Dot Formation on Si(111)-7 ×7 Surface with C Predeposition Using Monomethylsilane

Fast neutron tolerance of the perpendicular-anisotropy CoFeB-MgO magnetic tunnel junctions with junction diameters between 46 and 64 nm

Real-Time Observation of Initial Thermal Oxidation on Si(110)-16x2 Surface by Photoemission Spectroscopy

Erratum: Raman-Scattering Spectroscopy of Epitaxial Graphene Formed on SiC Film on Si Substrate [e-J. Surf. Sci. Nanotech. Vol. 7, pp. 107-109 (2009)]

Comparison of the Growth Characteristics of SiC on Si between Low-Pressure CVD and Triode Plasma CVD

Initial oxidation of HF-acid treated SiGe(100) surfaces under air exposure investigated by synchrotron radiation X-ray photoelectron spectroscopy and IR absorption spectroscopy

Structural Analysis of Thermally-Annealed Bulk Heterojunction Films Based on Sexithiophene and Fullerene

Ge dot formation using germane on a monomethylsilane-adsorbed Si(001)–2 × 1 surface

Formation of Ge Nanodots Capped with SiC Layer by Gas-Source MBE Using MMGe and MMSi

The growth of GaN films by alternate source gas supply hot-mesh CVD method

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