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Mechanisms of boron diffusion in silicon and germanium

Journal of applied physics, 2013-01, Vol.113 (3)

2013

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A critical evaluation of Ag- and Ti-hyperdoped Si for Si-based infrared light detection

Journal of applied physics, 2021-02, Vol.129 (6)

2021

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Low temperature deactivation of Ge heavily n-type doped by ion implantation and laser thermal annealing

Applied physics letters, 2017-01, Vol.110 (1)

2017

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Phase field model of the nanoscale evolution during the explosive crystallization phenomenon

Journal of applied physics, 2018-03, Vol.123 (10)

2018

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Optical properties of highly n-doped germanium obtained by in situ doping and laser annealing

Journal of physics. D, Applied physics, 2017-11, Vol.50 (46), p.465103

2017

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Laser-induced activation of Mg-doped GaN: quantitative characterization and analysis

Journal of physics. D, Applied physics, 2022-05, Vol.55 (18), p.185104

2022

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Morphological and Functional Modifications of Optical Thin Films for Space Applications Irradiated with Low-Energy Helium Ions

ACS applied materials & interfaces, 2018-10, Vol.10 (40), p.34781-34791

2018

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N-type doping of SiC-passivated Ge by pulsed laser melting towards the development of interdigitated back contact thermophotovoltaic devices

Solar energy materials and solar cells, 2022-01, Vol.235, p.111463, Article 111463

2022

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N-type doping of Ge by P spin on dopant and pulsed laser melting

Semiconductor science and technology, 2020-06, Vol.35 (6), p.65002

2020

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Monolayer doping of germanium by phosphorus-containing molecules

Nanotechnology, 2018-11, Vol.29 (46), p.465702-465702

2018

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New method for the production of thin and stable, segmented n+ contacts in HPGe detectors

The European physical journal. A, Hadrons and nuclei, 2021-06, Vol.57 (6), Article 177

2021

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Electrical compensation via vacancy–donor complexes in arsenic-implanted and laser-annealed germanium

Applied physics letters, 2016-10, Vol.109 (18)

2016

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Characterization and modeling of thermally-induced doping contaminants in high-purity germanium

Journal of physics. D, Applied physics, 2019-01, Vol.52 (3), p.35104

2019

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Anomalous transport of Sb in laser irradiated Ge

Applied physics letters, 2012-10, Vol.101 (17)

2012

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Quantification of phosphorus diffusion and incorporation in silicon nanocrystals embedded in silicon oxide

Surface and interface analysis, 2014-11, Vol.46 (S1), p.393-396

2014

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Impurity and defect interactions during laser thermal annealing in Ge

Journal of applied physics, 2016-01, Vol.119 (4)

2016

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Extended point defects in crystalline materials: Ge and Si

Physical review letters, 2013-04, Vol.110 (15), p.155501-155501, Article 155501

2013

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In situ ohmic contact formation for n-type Ge via non-equilibrium processing

Semiconductor science and technology, 2017-11, Vol.32 (11), p.115006

2017

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Pulsed laser diffusion of thin hole-barrier contacts in high purity germanium for gamma radiation detectors

The European physical journal. A, Hadrons and nuclei, 2018-03, Vol.54 (3), p.1-6, Article 34

2018

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Ga-implantation in Ge: Electrical activation and clustering

Journal of applied physics, 2009-07, Vol.106 (1), p.013518-013518-6

2009

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Hydrogen diffusion and segregation during solid phase epitaxial regrowth of preamorphized Si

Journal of applied physics, 2016-03, Vol.119 (11)

2016

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Fluorine in Ge: Segregation and EOR-defects stabilization

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2012-07, Vol.282, p.21-24

2012

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Electronic band structures of undoped and P-doped Si nanocrystals embedded in SiO2

Journal of materials chemistry. C, Materials for optical and electronic devices, 2018-01, Vol.6 (1), p.119-126

2018

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Investigation of germanium implanted with aluminum by multi-laser micro-Raman spectroscopy

Thin solid films, 2013-08, Vol.541, p.76-78

2013

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Study of carrier concentration profiles in Al-implanted Ge by micro-Raman spectroscopy under different excitation wavelengths

Journal of Raman spectroscopy, 2013-05, Vol.44 (5), p.665-669

2013

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Mechanisms of boron diffusion in silicon and germanium

A critical evaluation of Ag- and Ti-hyperdoped Si for Si-based infrared light detection

Low temperature deactivation of Ge heavily n-type doped by ion implantation and laser thermal annealing

Phase field model of the nanoscale evolution during the explosive crystallization phenomenon

Optical properties of highly n-doped germanium obtained by in situ doping and laser annealing

Laser-induced activation of Mg-doped GaN: quantitative characterization and analysis

Morphological and Functional Modifications of Optical Thin Films for Space Applications Irradiated with Low-Energy Helium Ions

N-type doping of SiC-passivated Ge by pulsed laser melting towards the development of interdigitated back contact thermophotovoltaic devices

N-type doping of Ge by P spin on dopant and pulsed laser melting

Monolayer doping of germanium by phosphorus-containing molecules

New method for the production of thin and stable, segmented n+ contacts in HPGe detectors

Electrical compensation via vacancy–donor complexes in arsenic-implanted and laser-annealed germanium

Characterization and modeling of thermally-induced doping contaminants in high-purity germanium

Anomalous transport of Sb in laser irradiated Ge

Quantification of phosphorus diffusion and incorporation in silicon nanocrystals embedded in silicon oxide

Impurity and defect interactions during laser thermal annealing in Ge

Extended point defects in crystalline materials: Ge and Si

In situ ohmic contact formation for n-type Ge via non-equilibrium processing

Pulsed laser diffusion of thin hole-barrier contacts in high purity germanium for gamma radiation detectors

Ga-implantation in Ge: Electrical activation and clustering

Hydrogen diffusion and segregation during solid phase epitaxial regrowth of preamorphized Si

Fluorine in Ge: Segregation and EOR-defects stabilization

Electronic band structures of undoped and P-doped Si nanocrystals embedded in SiO2

Investigation of germanium implanted with aluminum by multi-laser micro-Raman spectroscopy

Study of carrier concentration profiles in Al-implanted Ge by micro-Raman spectroscopy under different excitation wavelengths

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