UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Mechanisms of boron diffusion in silicon and germanium

Journal of applied physics, 2013-01, Vol.113 (3)

2013

Volltextzugriff (PDF)

A critical evaluation of Ag- and Ti-hyperdoped Si for Si-based infrared light detection

Journal of applied physics, 2021-02, Vol.129 (6)

2021

Volltextzugriff (PDF)

Low temperature deactivation of Ge heavily n-type doped by ion implantation and laser thermal annealing

Applied physics letters, 2017-01, Vol.110 (1)

2017

Volltextzugriff (PDF)

N-type doping of Ge by As implantation and excimer laser annealing

Journal of applied physics, 2014-02, Vol.115 (5)

2014

Volltextzugriff (PDF)

Phase field model of the nanoscale evolution during the explosive crystallization phenomenon

Journal of applied physics, 2018-03, Vol.123 (10)

2018

Volltextzugriff (PDF)

Optical properties of highly n-doped germanium obtained by in situ doping and laser annealing

Journal of physics. D, Applied physics, 2017-11, Vol.50 (46), p.465103

2017

Volltextzugriff (PDF)

Laser-induced activation of Mg-doped GaN: quantitative characterization and analysis

Journal of physics. D, Applied physics, 2022-05, Vol.55 (18), p.185104

2022

Volltextzugriff (PDF)

Monolayer doping of germanium by phosphorus-containing molecules

Nanotechnology, 2018-11, Vol.29 (46), p.465702-465702

2018

Volltextzugriff (PDF)

Morphological and Functional Modifications of Optical Thin Films for Space Applications Irradiated with Low-Energy Helium Ions

ACS applied materials & interfaces, 2018-10, Vol.10 (40), p.34781-34791

2018

Volltextzugriff (PDF)

N-type doping of SiC-passivated Ge by pulsed laser melting towards the development of interdigitated back contact thermophotovoltaic devices

Solar energy materials and solar cells, 2022-01, Vol.235, p.111463, Article 111463

2022

Volltextzugriff (PDF)

N-type doping of Ge by P spin on dopant and pulsed laser melting

Semiconductor science and technology, 2020-06, Vol.35 (6), p.65002

2020

Volltextzugriff (PDF)

New method for the production of thin and stable, segmented n+ contacts in HPGe detectors

The European physical journal. A, Hadrons and nuclei, 2021-06, Vol.57 (6), Article 177

2021

Volltextzugriff (PDF)

Characterization and modeling of thermally-induced doping contaminants in high-purity germanium

Journal of physics. D, Applied physics, 2019-01, Vol.52 (3), p.35104

2019

Volltextzugriff (PDF)

Electrical compensation via vacancy–donor complexes in arsenic-implanted and laser-annealed germanium

Applied physics letters, 2016-10, Vol.109 (18)

2016

Volltextzugriff (PDF)

Anomalous transport of Sb in laser irradiated Ge

Applied physics letters, 2012-10, Vol.101 (17)

2012

Volltextzugriff (PDF)

Quantification of phosphorus diffusion and incorporation in silicon nanocrystals embedded in silicon oxide

Surface and interface analysis, 2014-11, Vol.46 (S1), p.393-396

2014

Volltextzugriff (PDF)

Impurity and defect interactions during laser thermal annealing in Ge

Journal of applied physics, 2016-01, Vol.119 (4)

2016

Volltextzugriff (PDF)

Extended point defects in crystalline materials: Ge and Si

Physical review letters, 2013-04, Vol.110 (15), p.155501-155501, Article 155501

2013

Volltextzugriff (PDF)

In situ ohmic contact formation for n-type Ge via non-equilibrium processing

Semiconductor science and technology, 2017-11, Vol.32 (11), p.115006

2017

Volltextzugriff (PDF)

Pulsed laser diffusion of thin hole-barrier contacts in high purity germanium for gamma radiation detectors

The European physical journal. A, Hadrons and nuclei, 2018-03, Vol.54 (3), p.1-6, Article 34

2018

Volltextzugriff (PDF)

Ga-implantation in Ge: Electrical activation and clustering

Journal of applied physics, 2009-07, Vol.106 (1), p.013518-013518-6

2009

Volltextzugriff (PDF)

Hydrogen diffusion and segregation during solid phase epitaxial regrowth of preamorphized Si

Journal of applied physics, 2016-03, Vol.119 (11)

2016

Volltextzugriff (PDF)

Fluorine in Ge: Segregation and EOR-defects stabilization

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2012-07, Vol.282, p.21-24

2012

Volltextzugriff (PDF)

Electronic band structures of undoped and P-doped Si nanocrystals embedded in SiO2

Journal of materials chemistry. C, Materials for optical and electronic devices, 2018-01, Vol.6 (1), p.119-126

2018

Volltextzugriff (PDF)

Investigation of germanium implanted with aluminum by multi-laser micro-Raman spectroscopy

Thin solid films, 2013-08, Vol.541, p.76-78

2013

Volltextzugriff (PDF)

1 – 25 von 289

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(236)
Mit Volltextzugriff
(242)

Publikationsform

Sprache

Erscheinungsjahr

n.n

Thema

Science & Technology
(195)
Physics
(185)
Physical Sciences
(179)
Physics, Applied
(106)
Technology
(99)
Materials Science
(78)
Materials Science, Multidisciplinary
(54)
Physics, Condensed Matter
(47)
Physics, Nuclear
(40)
Engineering
(31)
Engineering, Electrical & Electronic
(30)
Diffusion
(28)
Germanium
(27)
Ion Implantation
(25)
Nuclear Experiment
(23)
Exact Sciences And Technology
(22)
Silicon
(22)
Instruments & Instrumentation
(20)
Annealing
(18)
Boron
(17)

15 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 90 Tagen
(2)

Menü

Weitere Dienste

Einstellungen

Mechanisms of boron diffusion in silicon and germanium

A critical evaluation of Ag- and Ti-hyperdoped Si for Si-based infrared light detection

Low temperature deactivation of Ge heavily n-type doped by ion implantation and laser thermal annealing

N-type doping of Ge by As implantation and excimer laser annealing

Phase field model of the nanoscale evolution during the explosive crystallization phenomenon

Optical properties of highly n-doped germanium obtained by in situ doping and laser annealing

Laser-induced activation of Mg-doped GaN: quantitative characterization and analysis

Monolayer doping of germanium by phosphorus-containing molecules

Morphological and Functional Modifications of Optical Thin Films for Space Applications Irradiated with Low-Energy Helium Ions

N-type doping of SiC-passivated Ge by pulsed laser melting towards the development of interdigitated back contact thermophotovoltaic devices

N-type doping of Ge by P spin on dopant and pulsed laser melting

New method for the production of thin and stable, segmented n+ contacts in HPGe detectors

Characterization and modeling of thermally-induced doping contaminants in high-purity germanium

Electrical compensation via vacancy–donor complexes in arsenic-implanted and laser-annealed germanium

Anomalous transport of Sb in laser irradiated Ge

Quantification of phosphorus diffusion and incorporation in silicon nanocrystals embedded in silicon oxide

Impurity and defect interactions during laser thermal annealing in Ge

Extended point defects in crystalline materials: Ge and Si

In situ ohmic contact formation for n-type Ge via non-equilibrium processing

Pulsed laser diffusion of thin hole-barrier contacts in high purity germanium for gamma radiation detectors

Ga-implantation in Ge: Electrical activation and clustering

Hydrogen diffusion and segregation during solid phase epitaxial regrowth of preamorphized Si

Fluorine in Ge: Segregation and EOR-defects stabilization

Electronic band structures of undoped and P-doped Si nanocrystals embedded in SiO2

Investigation of germanium implanted with aluminum by multi-laser micro-Raman spectroscopy

Suchergebnisse filtern