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Atomic layer deposition of functional multicomponent oxides

APL materials, 2019-11, Vol.7 (11), p.110901-110901-15

2019

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Forming-Free and Non-linear Resistive Switching in Bilayer HfOx/TaOx Memory Devices by Interface-Induced Internal Resistance

Electronic materials letters, 2024, Vol.20 (4), p.363-371

2024

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Compliance-free, analog RRAM devices based on SnOx

Scientific reports, 2024-06, Vol.14 (1), p.14163-8, Article 14163

2024

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Nickel oxide thin films grown by chemical deposition techniques: Potential and challenges in next‐generation rigid and flexible device applications

InfoMat, 2021-05, Vol.3 (5), p.536-576

2021

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Strong absorption and ultrafast localisation in NaBiS2 nanocrystals with slow charge-carrier recombination

Nature communications, 2022-08, Vol.13 (1), p.4960-4960, Article 4960

2022

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Ti Alloyed α-Ga2O3: Route towards Wide Band Gap Engineering

Micromachines (Basel), 2020-12, Vol.11 (12), p.1128

2020

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Development of a microfluidic design for an automatic lab-on-chip operation

Microfluidics and nanofluidics, 2016-10, Vol.20 (10), p.1, Article 142

2016

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Antiferromagnetism and p‐type conductivity of nonstoichiometric nickel oxide thin films

InfoMat, 2020-07, Vol.2 (4), p.769-774

2020

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High speed microfluidic prototyping by programmable proximity aperture MeV ion beam lithography

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2013-07, Vol.306, p.302-306

2013

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High-Performance TiN/TaO } /TiN Selectors With Short-Term Memory Characteristics

IEEE transactions on electron devices, 2024-07, p.1-4

2024

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Forming-Free and Non-linear Resistive Switching in Bilayer $$\hbox {HfO}_{\textrm{x}}$$/$$\hbox {TaO}_{\textrm{x}}$$ Memory Devices by Interface-Induced Internal Resistance

Electronic materials letters, 2024-07, Vol.20 (4), p.363-371

2024

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Room-temperature plasma-enhanced atomic layer deposition of ZnO: Film growth dependence on the PEALD reactor configuration

Surface & coatings technology, 2017-10, Vol.326, p.281-290

2017

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Role of ALD Al2O3 Surface Passivation on the Performance of p‑Type Cu2O Thin Film Transistors

ACS applied materials & interfaces, 2021-01, Vol.13 (3), p.4156-4164

2021

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Nucleation and growth of ZnO on PMMA by low-temperature atomic layer deposition

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2015-01, Vol.33 (1)

2015

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Photo-assisted O− and Al− production with a cesium sputter ion source

AIP Conference Proceedings, 2021, Vol.2373 (1)

2021

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Bandgap lowering in mixed alloys of CsAg(SbBi)Br double perovskite thin films

Journal of materials chemistry. A, Materials for energy and sustainability, 2020-10, Vol.8 (41), p.2178-21788

2020

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Bandgap lowering in mixed alloys of Cs 2 Ag(Sb x Bi 1−x )Br 6 double perovskite thin films

Journal of materials chemistry. A, Materials for energy and sustainability, 2020-10, Vol.8 (41), p.21780-21788

2020

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Role of ALD Al 2 O 3 Surface Passivation on the Performance of p-Type Cu 2 O Thin Film Transistors

ACS applied materials & interfaces, 2021-01, Vol.13 (3), p.4156-4164

2021

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Ti Alloyed α -Ga 2 O 3 : Route towards Wide Band Gap Engineering

Micromachines (Basel), 2020-12, Vol.11 (12)

2020

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Rapid Vapor-Phase Deposition of High-Mobility p‑Type Buffer Layers on Perovskite Photovoltaics for Efficient Semitransparent Devices

ACS energy letters, 2020-08, Vol.5 (8), p.2456-2465

2020

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Bandgap lowering in mixed alloys of Cs2Ag(SbxBi1−x)Br6 double perovskite thin films (Raw data available. See DOI: 10.14469/hpc/7480)

Journal of materials chemistry. A, Materials for energy and sustainability, 2020-01, Vol.8 (41), p.21780-21788

2020

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Spatially selective crystallization of ferroelectric Hf0.5Zr0.5O2 films induced by sub-nanosecond laser annealing

Applied materials today, 2024-02, Vol.36, p.102033, Article 102033

2024

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Atomic scale surface modification of TiO 2 3D nano-arrays: plasma enhanced atomic layer deposition of NiO for photocatalysis

Materials advances, 2021-01, Vol.2 (1), p.273-279

2021

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Atomic scale surface modification of TiO 3D nano-arrays: plasma enhanced atomic layer deposition of NiO for photocatalysis

Materials advances, 2021-01, Vol.2 (1), p.273-279

2021

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Why are hydrogen ions best for MeV ion beam lithography?

Microelectronic engineering, 2013-02, Vol.102, p.22-24

2013

Volltextzugriff (PDF)

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Atomic layer deposition of functional multicomponent oxides

Forming-Free and Non-linear Resistive Switching in Bilayer HfOx/TaOx Memory Devices by Interface-Induced Internal Resistance

Compliance-free, analog RRAM devices based on SnOx

Nickel oxide thin films grown by chemical deposition techniques: Potential and challenges in next‐generation rigid and flexible device applications

Strong absorption and ultrafast localisation in NaBiS2 nanocrystals with slow charge-carrier recombination

Ti Alloyed α-Ga2O3: Route towards Wide Band Gap Engineering

Development of a microfluidic design for an automatic lab-on-chip operation

Antiferromagnetism and p‐type conductivity of nonstoichiometric nickel oxide thin films

High speed microfluidic prototyping by programmable proximity aperture MeV ion beam lithography

High-Performance TiN/TaO } /TiN Selectors With Short-Term Memory Characteristics

Forming-Free and Non-linear Resistive Switching in Bilayer $$\hbox {HfO}_{\textrm{x}}$$/$$\hbox {TaO}_{\textrm{x}}$$ Memory Devices by Interface-Induced Internal Resistance

Room-temperature plasma-enhanced atomic layer deposition of ZnO: Film growth dependence on the PEALD reactor configuration

Role of ALD Al2O3 Surface Passivation on the Performance of p‑Type Cu2O Thin Film Transistors

Nucleation and growth of ZnO on PMMA by low-temperature atomic layer deposition

Photo-assisted O− and Al− production with a cesium sputter ion source

Bandgap lowering in mixed alloys of CsAg(SbBi)Br double perovskite thin films

Bandgap lowering in mixed alloys of Cs 2 Ag(Sb x Bi 1−x )Br 6 double perovskite thin films

Role of ALD Al 2 O 3 Surface Passivation on the Performance of p-Type Cu 2 O Thin Film Transistors

Ti Alloyed α -Ga 2 O 3 : Route towards Wide Band Gap Engineering

Rapid Vapor-Phase Deposition of High-Mobility p‑Type Buffer Layers on Perovskite Photovoltaics for Efficient Semitransparent Devices

Bandgap lowering in mixed alloys of Cs2Ag(SbxBi1−x)Br6 double perovskite thin films (Raw data available. See DOI: 10.14469/hpc/7480)

Spatially selective crystallization of ferroelectric Hf0.5Zr0.5O2 films induced by sub-nanosecond laser annealing

Atomic scale surface modification of TiO 2 3D nano-arrays: plasma enhanced atomic layer deposition of NiO for photocatalysis

Atomic scale surface modification of TiO 3D nano-arrays: plasma enhanced atomic layer deposition of NiO for photocatalysis

Why are hydrogen ions best for MeV ion beam lithography?

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