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Generation of two‐dimensional electron gas to normally depleted AlGaN/GaN hetero‐interface by SiO2 deposition and subsequent high‐temperature annealing

Electronics letters, 2021-08, Vol.57 (17), p.670-671

2021

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Characterization of Arabidopsis genes involved in biosynthesis of polyamines in abiotic stress responses and developmental stages

Plant, cell and environment, 2003-11, Vol.26 (11), p.1917-1926

2003

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High-frequency performance of AlGaN channel HEMTs with high breakdown voltage

Electronics letters, 2014-10, Vol.50 (22), p.1577-1579

2014

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Toxicity of free proline revealed in an Arabidopsis T-DNA-tagged mutant deficient in proline dehydrogenase

Plant and cell physiology, 2003-05, Vol.44 (5), p.541-548

2003

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Thermal annealing effects on Ni/Au based Schottky contacts on n-GaN and AlGaN/GaN with insertion of high work function metal

Solid-state electronics, 2004-05, Vol.48 (5), p.689-695

2004

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Characterization of full-length enriched expressed sequence tags of stress-treated poplar [Populus nigra] leaves

Plant and cell physiology, 2004-12, Vol.45 (12), p.1738-1748

2004

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Comparison of characteristics of AlGaN channel HEMTs formed on SiC and sapphire substrates

Electronics letters, 2009, Vol.45 (8), p.424

2009

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Expressed sequence tags from Cryptomeria japonica sapwood during the drying process

Tree physiology, 2007, Vol.27 (1), p.1-9

2007

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Application of lightly doped drain structure to AlGaN/GaN HEMTs by ion implantation technique

Electronics letters, 2008, Vol.44 (23), p.1378-1379

2008

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Effects of interfacial thin metal layer for high-performance Pt-Au-based Schottky contacts to AlGaN-GaN

IEEE transactions on electron devices, 2004-03, Vol.51 (3), p.297-303

2004

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AlGaN Channel HEMT With Extremely High Breakdown Voltage

IEEE transactions on electron devices, 2013-03, Vol.60 (3), p.1046-1053

2013

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Generation of two‐dimensional electron gas to normally depleted AlGaN/GaN hetero‐interface by SiO 2 deposition and subsequent high‐temperature annealing

Electronics letters, 2021-08, Vol.57 (17), p.670-671

2021

Volltextzugriff (PDF)

Monitoring the expression profiles of 7000 Arabidopsis genes under drought, cold and high‐salinity stresses using a full‐length cDNA microarray

The Plant journal : for cell and molecular biology, 2002-08, Vol.31 (3), p.279-292

2002

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Arabidopsis stress-inducible gene for arginine decarboxylase AtADC2 is required for accumulation of putrescine in salt tolerance

Biochemical and biophysical research communications, 2004-01, Vol.313 (2), p.369-375

2004

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Demonstration of Fundamental Characteristics for Power Switching Application in Planer Type E-mode MOS-HEMT Using Normally Depleted AlGaN GaN Epitaxial Layer On Si Substrate

2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2023, p.223-226

2023

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Efficient Photocatalytic Oxygenation of Aromatic Alkene to 1,2-Dioxetane with Oxygen via Electron Transfer

Organic letters, 2005-09, Vol.7 (19), p.4265-4268

2005

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Antisense suppression of proline degradation improves tolerance to freezing and salinity in Arabidopsis thaliana

FEBS letters, 1999-11, Vol.461 (3), p.205-210

1999

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Monitoring expression profiles of Arabidopsis gene expression during rehydration process after dehydration using ca. 7000 full‐length cDNA microarray

The Plant journal : for cell and molecular biology, 2003-06, Vol.34 (6), p.868-887

2003

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Biological functions of proline in morphogenesis and osmotolerance revealed in antisense transgenic Arabidopsis thaliana

The Plant journal : for cell and molecular biology, 1999-04, Vol.18 (2), p.185-193

1999

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A C-Band AlGaN/GaN HEMT with Cat-CVD SiN Passivation Developed for an Over 100 W Operation

IEEE MTT-S International Microwave Symposium Digest, 2005, 2005, p.495-498

2005

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Pseudogap in the tunneling spectra of slightly overdoped Bi2212

Physica. C, Superconductivity, 2001-11, Vol.364, p.604-607

2001

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AlGaN channel HEMTs on AlN buffer layer with sufficiently low off-state drain leakage current

Electronics letters, 2009, Vol.45 (25), p.1346

2009

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Application of lightly doped drain structure to AlGaN/GaN HEMTs by ion implantation technique

Electronics letters, 2008-11, Vol.44 (23), p.1-1

2008

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Usefulness of anisotropic diffusion method in cerebral perfusion study using multi-detector row CT

International Congress series, 2005-01, Vol.1281, p.1309-1309

2005

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Effects of a thin Al layer insertion between AlGaN and Schottky gate on the AlGaN∕GaN high electron mobility transistor characteristics

Applied physics letters, 2006-01, Vol.88 (4)

2006

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Generation of two‐dimensional electron gas to normally depleted AlGaN/GaN hetero‐interface by SiO2 deposition and subsequent high‐temperature annealing

Characterization of Arabidopsis genes involved in biosynthesis of polyamines in abiotic stress responses and developmental stages

High-frequency performance of AlGaN channel HEMTs with high breakdown voltage

Toxicity of free proline revealed in an Arabidopsis T-DNA-tagged mutant deficient in proline dehydrogenase

Thermal annealing effects on Ni/Au based Schottky contacts on n-GaN and AlGaN/GaN with insertion of high work function metal

Characterization of full-length enriched expressed sequence tags of stress-treated poplar [Populus nigra] leaves

Comparison of characteristics of AlGaN channel HEMTs formed on SiC and sapphire substrates

Expressed sequence tags from Cryptomeria japonica sapwood during the drying process

Application of lightly doped drain structure to AlGaN/GaN HEMTs by ion implantation technique

Effects of interfacial thin metal layer for high-performance Pt-Au-based Schottky contacts to AlGaN-GaN

AlGaN Channel HEMT With Extremely High Breakdown Voltage

Generation of two‐dimensional electron gas to normally depleted AlGaN/GaN hetero‐interface by SiO 2 deposition and subsequent high‐temperature annealing

Monitoring the expression profiles of 7000 Arabidopsis genes under drought, cold and high‐salinity stresses using a full‐length cDNA microarray

Arabidopsis stress-inducible gene for arginine decarboxylase AtADC2 is required for accumulation of putrescine in salt tolerance

Demonstration of Fundamental Characteristics for Power Switching Application in Planer Type E-mode MOS-HEMT Using Normally Depleted AlGaN GaN Epitaxial Layer On Si Substrate

Efficient Photocatalytic Oxygenation of Aromatic Alkene to 1,2-Dioxetane with Oxygen via Electron Transfer

Antisense suppression of proline degradation improves tolerance to freezing and salinity in Arabidopsis thaliana

Monitoring expression profiles of Arabidopsis gene expression during rehydration process after dehydration using ca. 7000 full‐length cDNA microarray

Biological functions of proline in morphogenesis and osmotolerance revealed in antisense transgenic Arabidopsis thaliana

A C-Band AlGaN/GaN HEMT with Cat-CVD SiN Passivation Developed for an Over 100 W Operation

Pseudogap in the tunneling spectra of slightly overdoped Bi2212

AlGaN channel HEMTs on AlN buffer layer with sufficiently low off-state drain leakage current

Application of lightly doped drain structure to AlGaN/GaN HEMTs by ion implantation technique

Usefulness of anisotropic diffusion method in cerebral perfusion study using multi-detector row CT

Effects of a thin Al layer insertion between AlGaN and Schottky gate on the AlGaN∕GaN high electron mobility transistor characteristics

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