UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Protection of SrBi2Ta2O9 ferroelectric capacitors from hydrogen damage by optimized metallization for memory applications

Applied physics letters, 2000-07, Vol.77 (1), p.76-78

2000

Volltextzugriff (PDF)

The Effect of Al/Pt Interface Reaction on Lead-zirconate-titanate Capacitor and the Optimization of Via Contact for Double Metal Ferroelectric RAM

Japanese Journal of Applied Physics, 1998-03, Vol.37 (3S), p.1332

1998

Volltextzugriff (PDF)

Polarity-dependent rejuvenation of ferroelectric properties of integrated SrBi2Ta2O9 capacitors by electrical stressing

Applied physics letters, 2000-01, Vol.76 (3), p.324-326

2000

Volltextzugriff (PDF)

ACE inhibition modulates transforming growth factor-β receptors in the young rat

Pediatric nephrology (Berlin, West), 2003-09, Vol.18 (9), p.865-871

2003

Volltextzugriff (PDF)

Indomethacin treatment decreases renal blood flow velocity in human neonates

Biology of the neonate, 1999-11, Vol.76 (5), p.261-265

1999

Volltextzugriff (PDF)

Novel device structure for phase change memory toward low-current operation

Japanese Journal of Applied Physics, 2015-09, Vol.54 (9), p.94302

2015

Volltextzugriff (PDF)

CHARACTERIZATION OF POLARIZATION SWITCHING BEHAVIOR OF Pt/SrBi2Ta2O9/Pt FERROELECTRIC CAPACITORS IN FERROELECTRIC RANDOM ACCESS MEMORY

Jpn.J.Appl.Phys ,Part 1. Vol. 41, no. 2A, pp. 694-697. 2002, 2002, Vol.41 (2A), p.694-697

2002

Volltextzugriff (PDF)

A stress gettering mechanism in semi-insulating, copper-contaminated gallium arsenide

Journal of applied physics, 1992-07, Vol.72 (1), p.82-89

1992

Volltextzugriff (PDF)

A 0.25 µm Complementary Metal Oxide Semiconductor Field Effect Transistor (CMOSFET) using Halo Implantation for 1 Gbit Dynamic Random Access Memory (DRAM)

Japanese Journal of Applied Physics, 1996-02, Vol.35 (2S), p.865

1996

Volltextzugriff (PDF)

A 0.25 μm complementary metal oxide semiconductor field effect transistor (CMOSFET) using halo implantation for 1 Gbit dynamic random access memory (DRAM)

Japanese journal of applied physics, 1996-02, Vol.35 (2B), p.865-868

1996

Volltextzugriff (PDF)

Electronic mode absorption at multi-acceptor levels of copper-doped GaAs

Journal of applied physics, 1990-11, Vol.68 (9), p.4772-4776

1990

Volltextzugriff (PDF)

Stress effects of the inter-level dielectric layer on the ferroelectric performance of integrated SrBi2Ta2O9 capacitors

Journal of applied physics, 2001-06, Vol.89 (12), p.8011-8016

2001

Volltextzugriff (PDF)

Stress effects of the inter-level dielectric layer on the ferroelectric performance of integrated SrBi{sub 2}Ta{sub 2}O{sub 9} capacitors

Journal of applied physics, 2001-06, Vol.89 (12)

2001

Volltextzugriff (PDF)

ACE inhibition modulates transforming growth factor-? receptors in the young rat

Pediatric nephrology (Berlin, West), 2003-09, Vol.18 (9), p.865-871

2003

Volltextzugriff (PDF)

Characterization of Polarization Switching Behavior of Pt/SrBi 2 Ta 2 O 9 /Pt Ferroelectric Capacitors in Ferroelectric Random Access Memory

Japanese Journal of Applied Physics, 2002-02, Vol.41 (Part 1, No. 2A), p.694-697

2002

Volltextzugriff (PDF)

Intermetal dielectric process using spin-on glass for ferroelectric memory devices having SrBi2Ta2O9 capacitors

Journal of materials research, 2000-12, Vol.15 (12), p.2822-2829

2000

Volltextzugriff (PDF)

Intermetal dielectric process using spin-on glass for ferroelectric memory devices having SrBi 2 Ta 2 O 9 capacitors

Journal of materials research, 2000-12, Vol.15 (12), p.2822-2829

2000

Volltextzugriff (PDF)

Surface plasmon enhancement of photoluminescence in photo-chemically synthesized graphene quantum dot and Au nanosphere

Nano research, 2016-06, Vol.9 (6), p.1866-1875

2016

Volltextzugriff (PDF)

Integration Process and Reliability for SrBi₂ Ta₂O9-based Ferroelectric Memories

Journal of semiconductor technology and science, 2001, Vol.1 (3), p.1-17

2001

Volltextzugriff (PDF)

Friction stir butt welding of A5052-O aluminum alloy plates

Transactions of Nonferrous Metals Society of China, 2012-12, Vol.22 (S3), p.619-623

2012

Volltextzugriff (PDF)

Variable < e1 > V < /e1 > (CC) design techniques forbattery-operated DRAMs

IEEE journal of solid-state circuits, 1993-04, Vol.28 (4), p.499-503

1993

Volltextzugriff (PDF)

Variable V/sub CC/ design techniques for battery-operated DRAMs

IEEE journal of solid-state circuits, 1993-04, Vol.28 (4), p.499-503

1993

Volltextzugriff (PDF)

Variable V sub(CC) design techniques for battery-operated DRAM's

IEEE journal of solid-state circuits, 1993-01, Vol.28 (4), p.499-503

1993

Volltextzugriff (PDF)

Stress gettering mechanism in semi-insulating, copper-contaminated gallium arsenide

Kang, Nam Soo

1990

Volltextzugriff (PDF)

Variable VCC design techniques for battery-operated DRAM's: VLSI circuits symposium

IEEE journal of solid-state circuits, 1993, Vol.28 (4), p.499-503

1993

Volltextzugriff (PDF)

1 – 25 von 424

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(345)
Mit Volltextzugriff
(358)

Publikationsform

Sprache

Erscheinungsjahr

n.n

Thema

Science & Technology
(224)
Life Sciences & Biomedicine
(130)
Humans
(55)
Technology
(54)
Physical Sciences
(51)
Engineering
(39)
Animals
(37)
Male
(34)
Chemistry
(33)
Physics
(33)
Biotechnology & Applied Microbiology
(32)
Engineering, Electrical & Electronic
(31)
Biochemistry & Molecular Biology
(26)
Biological And Medical Sciences
(26)
Female
(26)
Mice
(23)
Microbiology
(23)
Physics, Applied
(21)
Science & Technology - Other Topics
(21)
Biotechnology
(20)

15 weitere anzeigen...

Weniger anzeigen...

Zeitschrift / Serie

5 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 30 Tagen
(5)
... seit 90 Tagen
(6)

Menü

Weitere Dienste

Einstellungen

Protection of SrBi2Ta2O9 ferroelectric capacitors from hydrogen damage by optimized metallization for memory applications

The Effect of Al/Pt Interface Reaction on Lead-zirconate-titanate Capacitor and the Optimization of Via Contact for Double Metal Ferroelectric RAM

Polarity-dependent rejuvenation of ferroelectric properties of integrated SrBi2Ta2O9 capacitors by electrical stressing

ACE inhibition modulates transforming growth factor-β receptors in the young rat

Indomethacin treatment decreases renal blood flow velocity in human neonates

Novel device structure for phase change memory toward low-current operation

CHARACTERIZATION OF POLARIZATION SWITCHING BEHAVIOR OF Pt/SrBi2Ta2O9/Pt FERROELECTRIC CAPACITORS IN FERROELECTRIC RANDOM ACCESS MEMORY

A stress gettering mechanism in semi-insulating, copper-contaminated gallium arsenide

A 0.25 µm Complementary Metal Oxide Semiconductor Field Effect Transistor (CMOSFET) using Halo Implantation for 1 Gbit Dynamic Random Access Memory (DRAM)

A 0.25 μm complementary metal oxide semiconductor field effect transistor (CMOSFET) using halo implantation for 1 Gbit dynamic random access memory (DRAM)

Electronic mode absorption at multi-acceptor levels of copper-doped GaAs

Stress effects of the inter-level dielectric layer on the ferroelectric performance of integrated SrBi2Ta2O9 capacitors

Stress effects of the inter-level dielectric layer on the ferroelectric performance of integrated SrBi{sub 2}Ta{sub 2}O{sub 9} capacitors

ACE inhibition modulates transforming growth factor-? receptors in the young rat

Characterization of Polarization Switching Behavior of Pt/SrBi 2 Ta 2 O 9 /Pt Ferroelectric Capacitors in Ferroelectric Random Access Memory

Intermetal dielectric process using spin-on glass for ferroelectric memory devices having SrBi2Ta2O9 capacitors

Intermetal dielectric process using spin-on glass for ferroelectric memory devices having SrBi 2 Ta 2 O 9 capacitors

Surface plasmon enhancement of photoluminescence in photo-chemically synthesized graphene quantum dot and Au nanosphere

Integration Process and Reliability for SrBi₂ Ta₂O9-based Ferroelectric Memories

Friction stir butt welding of A5052-O aluminum alloy plates

Variable < e1 > V < /e1 > (CC) design techniques forbattery-operated DRAMs

Variable V/sub CC/ design techniques for battery-operated DRAMs

Variable V sub(CC) design techniques for battery-operated DRAM's

Stress gettering mechanism in semi-insulating, copper-contaminated gallium arsenide

Variable VCC design techniques for battery-operated DRAM's: VLSI circuits symposium

Suchergebnisse filtern