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Study of High-k/Metal-Gate Work-Function Variation Using Rayleigh Distribution

IEEE electron device letters, 2013-04, Vol.34 (4), p.532-534

2013

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Impact of Current Flow Shape in Tapered (Versus Rectangular) FinFET on Threshold Voltage Variation Induced by Work-Function Variation

IEEE transactions on electron devices, 2014-06, Vol.61 (6), p.2007-2011

2014

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Study of High- k/Metal-Gate Work Function Variation in FinFET: The Modified RGG Concept

IEEE electron device letters, 2013-12, Vol.34 (12), p.1560-1562

2013

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Study of Work-Function Variation in High- \kappa /Metal-Gate Gate-All-Around Nanowire MOSFET

IEEE transactions on electron devices, 2016-08, Vol.63 (8), p.3338-3341

2016

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Random Variation Analysis and Variation-Aware Design of Symmetric Tunnel Field-Effect Transistor

IEEE transactions on electron devices, 2015-06, Vol.62 (6), p.1778-1783

2015

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A 78.8-84 GHz Phase Locked Loop Synthesizer for a W-Band Frequency-Hopping FMCW Radar Transceiver in 65 nm CMOS

Sensors (Basel, Switzerland), 2022-05, Vol.22 (10), p.3626

2022

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Study of Work-Function Variation for High- \kappa /Metal-Gate Ge-Source Tunnel Field-Effect Transistors

IEEE transactions on electron devices, 2015-07, Vol.62 (7), p.2143-2147

2015

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An X-band Bi-Directional Transmit/Receive Module for a Phased Array System in 65-nm CMOS

Sensors (Basel, Switzerland), 2018-08, Vol.18 (8), p.2569

2018

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A Full X-Band Phased-Array Transmit/Receive Module Chip in 65-nm CMOS Technology

IEEE access, 2020, Vol.8, p.76182-76192

2020

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The Efficacy of Metal-Interfacial Layer-Semiconductor Source/Drain Structure on Sub-10-nm n-Type Ge FinFET Performances

IEEE electron device letters, 2014-12, Vol.35 (12), p.1185-1187

2014

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Impact of the Metal-Gate Material Properties in FinFET (Versus FD-SOI MOSFET) on High- \kappa /Metal-Gate Work-Function Variation

IEEE transactions on electron devices, 2018-11, Vol.65 (11), p.4780-4785

2018

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Analysis of Random Variations and Variation-Robust Advanced Device Structures

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2014, 14(1), 55, pp.8-22

2014

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Impact of the Metal-Gate Material Properties in FinFET (Versus FD-SOI MOSFET) on High- [Formula Omitted]/Metal-Gate Work-Function Variation

IEEE transactions on electron devices, 2018-01, Vol.65 (11), p.4780

2018

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Study of High-[Formula Omitted]/Metal-Gate Work Function Variation in FinFET: The Modified RGG Concept

IEEE electron device letters, 2013-12, Vol.34 (12), p.1560

2013

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A Compact I/Q Upconversion Chain for a 5G Wireless Transmitter in 65-nm CMOS Technology

IEEE microwave and wireless components letters, 2020-03, Vol.30 (3), p.284-287

2020

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A W-Band Divide-by-Three Injection-Locked Frequency Divider With Injection Current Boosting Utilizing Inductive Feedback in 65-nm CMOS

IEEE microwave and wireless components letters, 2020-05, Vol.30 (5), p.516-519

2020

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A D-band Variable Gain Low Noise Amplifier in a 28 nm CMOS Process for 6G Wireless Communications

IEEE transactions on circuits and systems. II, Express briefs, 2024-01, Vol.71 (1), p.1-1

2024

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Symmetric tunnel field-effect transistor (S-TFET)

Current Applied Physics, 2015, 15(2), , pp.71-77

2015

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A compact W‐band mixer‐first receiver in 65nm CMOS

Microwave and optical technology letters, 2019-07, Vol.61 (7), p.1702-1705

2019

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A 5.5 dBm 125-140 GHz ×6 Frequency Multiplier Operating With -27 dBm Input Power in 28-nm CMOS

IEEE microwave and wireless technology letters (Print), 2024-07, Vol.34 (7), p.935-938

2024

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Study of Work-Function Variation in High-[Formula Omitted]/Metal-Gate Gate-All-Around Nanowire MOSFET

IEEE transactions on electron devices, 2016-08, Vol.63 (8), p.3338

2016

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A 5.8‐17.6 GHz cascaded bi‐directional distributed gain amplifier utilizing asymmetric stages in 65nm CMOS

Microwave and optical technology letters, 2019-07, Vol.61 (7), p.1683-1687

2019

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A 2–18 GHz Compressed Sensing Receiver With Broadband LO Chain in 0.13-[Formula Omitted]m BiCMOS

IEEE microwave and wireless technology letters (Print), 2019-01, Vol.29 (9), p.620

2019

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A D-Band High-Linearity Down-Conversion Mixer for 6G Wireless Communications

IEEE microwave and wireless technology letters (Print), 2023-05, Vol.33 (5), p.1-4

2023

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A compact W‐band mixer‐first receiver in 65 nm CMOS

Microwave and optical technology letters, 2019-07, Vol.61 (7), p.1702-1705

2019

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Study of High-k/Metal-Gate Work-Function Variation Using Rayleigh Distribution

Impact of Current Flow Shape in Tapered (Versus Rectangular) FinFET on Threshold Voltage Variation Induced by Work-Function Variation

Study of High- k/Metal-Gate Work Function Variation in FinFET: The Modified RGG Concept

Study of Work-Function Variation in High- \kappa /Metal-Gate Gate-All-Around Nanowire MOSFET

Random Variation Analysis and Variation-Aware Design of Symmetric Tunnel Field-Effect Transistor

A 78.8-84 GHz Phase Locked Loop Synthesizer for a W-Band Frequency-Hopping FMCW Radar Transceiver in 65 nm CMOS

Study of Work-Function Variation for High- \kappa /Metal-Gate Ge-Source Tunnel Field-Effect Transistors

An X-band Bi-Directional Transmit/Receive Module for a Phased Array System in 65-nm CMOS

A Full X-Band Phased-Array Transmit/Receive Module Chip in 65-nm CMOS Technology

The Efficacy of Metal-Interfacial Layer-Semiconductor Source/Drain Structure on Sub-10-nm n-Type Ge FinFET Performances

Impact of the Metal-Gate Material Properties in FinFET (Versus FD-SOI MOSFET) on High- \kappa /Metal-Gate Work-Function Variation

Analysis of Random Variations and Variation-Robust Advanced Device Structures

Impact of the Metal-Gate Material Properties in FinFET (Versus FD-SOI MOSFET) on High- [Formula Omitted]/Metal-Gate Work-Function Variation

Study of High-[Formula Omitted]/Metal-Gate Work Function Variation in FinFET: The Modified RGG Concept

A Compact I/Q Upconversion Chain for a 5G Wireless Transmitter in 65-nm CMOS Technology

A W-Band Divide-by-Three Injection-Locked Frequency Divider With Injection Current Boosting Utilizing Inductive Feedback in 65-nm CMOS

A D-band Variable Gain Low Noise Amplifier in a 28 nm CMOS Process for 6G Wireless Communications

Symmetric tunnel field-effect transistor (S-TFET)

A compact W‐band mixer‐first receiver in 65nm CMOS

A 5.5 dBm 125-140 GHz ×6 Frequency Multiplier Operating With -27 dBm Input Power in 28-nm CMOS

Study of Work-Function Variation in High-[Formula Omitted]/Metal-Gate Gate-All-Around Nanowire MOSFET

A 5.8‐17.6 GHz cascaded bi‐directional distributed gain amplifier utilizing asymmetric stages in 65nm CMOS

A 2–18 GHz Compressed Sensing Receiver With Broadband LO Chain in 0.13-[Formula Omitted]m BiCMOS

A D-Band High-Linearity Down-Conversion Mixer for 6G Wireless Communications

A compact W‐band mixer‐first receiver in 65 nm CMOS

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